Single-step direct fabrication of luminescent Cu-doped ZnxCd1−xS quantum dot thin films via a molecular precursor solution approach and their application in luminescent, transparent, and conductive thin films

Luminescent Cu-doped ZnxCd1−xS quantum dot thin films have been directly fabricated via a facile solution method in open air. Cu2O, ZnO, and Cd(OH)2 were used as starting materials, and 3-mercaptopropionic acid was used as the capping agent. The effects of Cu dopant concentration, sintering temperature, and sintering time on the photoluminescence properties of Cu-doped ZnxCd1−xS nanocrystal thin films have been systematically investigated. As-prepared quantum dot thin films exhibit tunable emission covering the whole visible light region and the absolute photoluminescence quantum yields can reach as high as 25.5%, which have high potential for applications in luminescent, transparent, and conductive thin films.