Highly sensitive and selective low-cost SnZrO nanofiber field-effect transistor for N,N-dimethylformamide vapour detection at room temperature

With the continuous attention to environmental issues, it is still a very important issue to study the gas sensor with high sensitivity, high selection and high stability at room temperature (28 ℃). In this work, we used electrospinning to prepare Zr-doped SnO 2 nanofiber field-effect transistors (FETs). The mobility ( μ ) of SnZrO nanofiber field-effect transistors is 1.21 cm 2 /Vs and the threshold voltage ( V TH ) of 1.1 V. When used for the detection of N,N-dimethylformamide (DMF) vapour, the SnZrO nanofiber field-effect transistors exhibit excellent performance for DMF vapour at 28 ℃, including when the DMF vapour concentration is 500 ppb, the maximum response value is as high as 91.7; excellent gas selection characteristics; fast response and recovery time (57/10 s); low concentration (50 ppb) detection stability；low theoretical detection limit (1 ppb). In addition, capacitive-voltage ( C-V ) analysis is used to further explore the internal mechanism of DMF sensing. The Zr-doped SnO 2 nanofiber field-effect transistors prepared by electrospinning provides a new strategy for exploring DMF sensors with high selectivity and high sensitivity at room temperature.