摘要
Rectifying memory is an effective strategy to solve the cross-talk issues of crossbar switch architecture during the integration procedure for high-density data storage. Herein, a two-dimensional (2D) conjugated microporous polymer (CMP) is proposed as an ideal resistive switching medium for integrated rectifying memory devices. Large-area 2D CMP film is prepared using a surface-confined polymerization method, featuring rewritable nonvolatile memory with a low set voltage in a graphene/CMP/metal diode. Importantly, this film exhibits outstanding structural stability during solvent immersion and other polymer coating, being suitable for solution-processed multilayer polymer electronics. By directly stacking the CMP memristor with a poly(3-hexylthiophene) rectifier, the integrated multilayer device shows desirable rectifying memory effect, effectively reducing the misreading issue induced by the cross-talk in a crossbar array.
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