摘要
In this study, we selected CsPbBr 3 quantum dots (QDs) as a modification layer of CsPbBr 3 /Carbon interface to facilitate their charge transfer for enhancing the photoelectronic conversion efficiency of ZnO/CsPbBr 3 /carbon solar cell. The results demonstrated that CsPbBr 3 QDs layer simultaneously improved film morphology, composition, and optoelectronic properties. This was achieved by filling pinholes, enlarging grain size, suppressing secondary phases, tuning elemental stoichiometry, enhancing electron transport, and reducing non-radiative recombination. The optimized device achieved an increase in PCE from 5.46% to 7.27%. This method and structure of solar cell we proposed in this paper provides a novel strategy for improving high-performance and high-stability PSCs.
危险品化学品经营许可证(带存储)