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A modification layer of CsPbBr3 quantum dots for improving charge transfer efficiency CsPbBr3/carbon interface on the ZnO/CsPbBr3/carbon solar cells

Journal 2026 · IF 3.9 · 发表于 2026 年 1 月 4 日
作者: Feng Min,Bai Zhongchen,Chen Qixin,Peng Xishun,Li Xinghua,Zhang Zhengping
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摘要

In this study, we selected CsPbBr 3 quantum dots (QDs) as a modification layer of CsPbBr 3 /Carbon interface to facilitate their charge transfer for enhancing the photoelectronic conversion efficiency of ZnO/CsPbBr 3 /carbon solar cell. The results demonstrated that CsPbBr 3 QDs layer simultaneously improved film morphology, composition, and optoelectronic properties. This was achieved by filling pinholes, enlarging grain size, suppressing secondary phases, tuning elemental stoichiometry, enhancing electron transport, and reducing non-radiative recombination. The optimized device achieved an increase in PCE from 5.46% to 7.27%. This method and structure of solar cell we proposed in this paper provides a novel strategy for improving high-performance and high-stability PSCs.

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