A flexible self-powered pentacene/Ga2O3 heterojunction solar-blind ultraviolet photodetector

In this work, a self-powered pentacene/Ga 2 O 3 heterojunction solar-blind ultraviolet (UV) photodetector was fabricated on a flexible mica substrate using magnetron sputtering and thermal evaporation. The device exhibits excellent self-powered characteristics under 254 nm solar-blind UV illumination. Under 254 nm irradiation with an intensity of 200 W/cm 2 at 0 V bias, the device achieved a responsivity of 2.11 mA/W, a specific detectivity of Jones, and a photo-to-dark current ratio of 2800. The rise and fall times were 0.69 s and 1.39 s, respectively. Furthermore, mechanical bending tests were conducted on the flexible device. After 700 bending cycles at a 30 rc , no significant degradation was observed in the current–voltage characteristics or the responsivity at 0 V bias, demonstrating its outstanding mechanical robustness.