Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P 83.4 As 0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site. The p-type VP has been switched into n-type VP-As, the effective electron mass was significantly reduced and resulted in high electron mobility of 2622.503 cm 2 V −1 s −1 . High electron mobility of 137.06 cm 2 V −1 s −1 has been achieved from field effect transistor, much higher than the hole mobility of VP.