High-Temperature Oxidation Behavior of Ti-Doped SiOC Ceramics

Silicon oxycarbide (SiOC) ceramics are prone to failure prematurely in high-temperature applications for thermal stress-induced cracks. Doping Ti into SiOC can improve the oxidation resistance by forming a SiO2-TiO2composite oxide layer. In this study, the oxidation behavior of Ti-doped SiOC ceramics in air at 1500 °C for 32 h was examined comprehensively. SiTiOC ceramics with a titanium-to-silicon molar ratio of 0.05 demonstrated the best oxidation resistance. The oxide layer was enhanced by the distribution of TiO2and TiSiO4at the grain boundaries of SiO2, which reduced the interfacial energy and inhibited crack propagation. Furthermore, the oxide layer composed primarily of SiO2and minor TiO2exhibited low oxygen diffusion coefficients and strong self-healing capability. However, increasing the titanium-to-silicon molar ratio to 0.2 generated many pores and cracks in the oxide layer, and the outward diffusion of Ti and active oxidation of TiC were been exacerbated during oxidation.