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Quaternary phosphonium bromide passivation for high-performance perovskite quantum dot light-emitting diodes

Journal 2026 · IF 9.7 · 发表于 2026 年 1 月 30 日
作者: Wanying Zhang,Kaihuai Zhuo,Jie Chen,Tongtong Wang,Xuanyang He,Mengjie Li,Weilin Gao,Yiran Zhao,Xue Yang,Zhuoyin Peng,Xiaoyu Zhang,Yingwei Wang,Keqiang Chen,Guogang Li
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摘要

Surface ligands are crucial for perovskite quantum dot (PQD) optoelectronics. However, long alkyl chains limit charge transport, while short chains destabilize their soft lattice, presenting a stability–mobility dilemma. Moreover, surface-bound protonated primary amines are susceptible to deprotonation, accelerating performance decay and structural collapse. In this work, we introduced tetrabutylphosphonium bromide (TBPB) as a surface passivation ligand to overcome these limitations. TBPB combines minimal molecular polarity—enabling a short chain for superior charge transport—with a fully coordinated phosphonium center that resists deprotonation and passivates halogen vacancies. This yields quantum dots with near-unity PLQY and robust stability, leading to LEDs achieving a maximum external quantum efficiency (EQE) of 24.28% and luminance of 122,786 cd m −2 , far surpassing control devices. Further shortening the ligand chain increases EQE to 27.89% but at the cost of severe luminance loss, underscoring the delicate balance in ligand engineering.

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