High-resolution array devices via insulating pattern definition layer transferred by UV-adhesive stamp

As display technologies mature, there is a growing demand for displays that offer superior visual quality. However, the development of high-resolution fabrication processes that are low-cost, simple, and scalable remains a significant challenge. Currently, established techniques like photolithography and inkjet printing face specific challenges. For instance, photolithography inevitably causes film damage during steps such as resist removal and etching, while inkjet printing is constrained by nozzle size and the coffee-ring effect, limiting further resolution improvements. This study employs an indirect transfer printing method, which utilizes a stamp fabricated via a two-step molding process. This stamp exhibits excellent solvent resistance, allowing it to define the pattern of the polymethyl methacrylate (PMMA) insulating layer and thereby indirectly achieve the patterning of the quantum dots. Additionally, a layer of PDMS is incorporated beneath the UV-adhesive stamp to enhance its overall elasticity, ensuring conformal contact with the target substrate during the transfer printing process. Compared to existing techniques for transferring insulating layers, our method significantly streamlines the fabrication workflow while maintaining high pattern fidelity and transfer success rates. Using this approach, we successfully fabricated green high-resolution devices with a resolution exceeding 6000 PPI and a maximum active area of 1 inch. This work provides a viable strategy and paves the way for high-resolution device fabrication.