Oriented ion migration in dielectric Sb4O5Cl2 single crystals for multifunctional two-dimensional electronics

Exploring dielectrics with high gate capacitance and artificial tailoring of electronic states is highly desirable for the development of 2D electronics. Here, we report the synthesis of a single-crystalline ionic dielectric Sb 4 O 5 Cl 2 with aligned ionic channels, achieving a dielectric constant of 23.3 (at a thickness of ~ 25 nm) and non-volatile programmable regulation of the ionic migration. The fabricated 2D MoS 2 transistors display on/off ratios up to 10 9 , leakage currents down to 10 −14 A, and mobility of 33.4 cm 2  V −1 s −1 . Oriented ionic channels facilitate efficient and controllable migration of Cl − ions, thus realizing a non-structural-damage and reconfigurable transition between a quasi-metallic and semiconducting state in MoS 2 , with a retention time exceeding 3000 s. During 100 cycles of state transitions, the quasi-metallic state exhibits a conductivity of 10 −5 S, which is 10 3 times that of the semiconducting state. Bio-inspired ionic channel further allows neuromorphic devices to integrate image storage, processing, and recognition capabilities, achieving a recognition accuracy improvement from 80.7% to 90.9% within just 5 training epochs through non-volatile preprocessing lasting over 300 s. Our study highlights the significant potential of this single-crystal ionic dielectric as a promising platform for fundamental research on electronic state modulation and advanced electronics.