Boron nitride meeting Fe: defect-induced interfacial electronic tuning for enhanced Fenton-like reaction

Because redox reactions involve electron transfer, modulating the electronic properties of catalysts can facilitate electron exchange between reactants and the catalyst surface, improving catalytic performance, especially for oxygen activation-based Fenton-like reaction. In this study, a series of boron nitride (BN) materials with varying nitrogen defect ratios were synthesized to modulate the electron distribution and transfer between the BN support and the Fe 2 O 3 anchored at defect sites. Combined characterizations of X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR), electrochemical impedance spectroscopy (EIS), and X-ray absorption fine structure spectroscopy (XAFS), we confirm that the interfacial electronic properties between Fe 2 O 3 and the support defects in Fe/BN-1 endow the Fe 2 O 3 with a relatively high local electron density. Specifically, the defect-rich BN-1 support donates electrons to the loaded Fe 2 O 3 , significantly enhancing the electron cloud density of the Fe active centers. Density functional theory (DFT) calculation further indicates that the Fe sites induced by N defects in h-BN are in an electron-rich state. This unique electronic structure facilitates electron transfer from the Fe sites to H 2 O 2 , thereby effectively promoting the subsequent activation of H 2 O 2 . As a result, Fe/BN-1 achieves an optimal Fenton-like catalytic activity for 96% tetracycline (TC) removal within 30 min, owing to its superior defect ratio and stronger interfacial interaction with Fe 2 O 3 . This work provides a foundation for the use of tunable defects in 2D materials to modulate the electronic properties of the metal supported on them for improved industrial redox reactions.