摘要
Perovskite light-emitting diodes (PeLEDs), characterized by their excellent optoelectronic properties, including high color purity, flexibly tunable emission wavelengths, and relatively high photoluminescent quantum yields, make them suitable for next-generation display technologies. This study investigates and demonstrates that PeLEDs using a PEDOT:PSS/LiF composite hole transport layer (HTL) can achieve enhanced device performance. When 1.0 mg mL −1 of LiF is added, the device attains a maximum luminance of 8317 cd m −2 and a maximum current efficiency of 8.09 cd A −1 , representing improvements of 163% and 92% respectively compared to the reference device. Analysis reveals that the introduction of LiF can optimize the morphology of the perovskite film and passivate defects within it. Additionally, it helps modulate the work function of PEDOT:PSS and enhance its electrical conductivity, thereby improving hole injection efficiency and further boosting the performance of the PeLEDs. The findings presented in this study can provide a reference for the optimization of PeLEDs.
危险品化学品经营许可证(带存储)