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Optoelectrical stacked dielectric-gated organic thin film transistors for artificial synaptic simulation

Journal 2026 · IF 2.9 · 发表于 2026 年 3 月 6 日
作者: Mengyun Zhang,Wanxun Li,Chenru Zhao,Farida Tatardar,Levent Parali,Anna Guliakova,Guodong Zhu
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摘要

Neuromorphic electronics refer to a new class of electronic devices inspired by the biological nervous system, which mimic the operation of synaptic information processing to break through the bottleneck of traditional Von Neumann Architecture. As three-terminal devices, thin film transistors intrinsically can be utilized to simulate artificial synaptic functions. Here we reported a kind of optoelectrical synaptic transistors with UV light-sensitive semiconducting molecules as active layer and composite of solid electrolyte and ferroelectric relaxor as gate dielectric. Migration and relaxation of ions in electrolyte under electrical field endowed the devices with electrical synaptic behaviors, while UV response of organic semiconductor further extends synaptic behaviors to UV light stimulus. By combing both electrical and UV excitations, the transistor devices were further developed for experimental simulation of classical conditioned reflex of the Pavlov's Dog.

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