Sulfur vacancy enhanced nanoflower-like In2S3 for selective detection of triethylamine gas

With its distinct layered structure, large specific surface area, and quick charge carrier transport capabilities, two-dimensional (2D) metal sulfide In 2 S 3 has emerged as a very promising gas sensing material. In this work, flower-like In 2 S 3 materials rich in sulfur vacancies (Sv) are generated using a vacancy engineering technique, and their gas-sensing performance for triethylamine (TEA) is thoroughly studied. The number of active sites on the material's surface and the effectiveness of electron transfer were greatly increased by precisely controlling sulfur vacancy defects by the modification of the sulfur source's concentration. With a working temperature as low as 160 °C, a response time of just 4 s, and a response value of 8.2 for 100 ppm TEA, the produced Sv-In 2 S 3 -2 sensor has exceptional TEA detection capabilities. It also demonstrated long-term stability and outstanding selectivity. In order to improve the TEA gas-sensing capabilities of In 2 S 3 materials, this study demonstrates that the addition of sulfur vacancies can yield a large number of Lewis acidic sites and reactive centers.