摘要
A new quantum dot (QD) films with negligible redshift of photoluminescence spectra after film fabrication from QD solution. An electron barrier around QDs realized by adopting ligands with concentrated electron distribution. Record external quantum efficiency of light-emitting diodes based on CsPbI 3 QDs (28.9% at 640 nm and 32.0% at 657 nm).
危险品化学品经营许可证(带存储)