Oxygen-vacancy-mediated single Pt atoms on ZnO nanowires for highly sensitive and selective hydrazine detection

Single-atoms (SAs) supported on inorganic materials have been confirmed as effective active sites in catalytic chemical reaction. For metal oxide semiconductor (MOS) based gas sensors, the core is the catalytic reaction process of gas molecules with adsorbed active oxygens on sensing materials. In order to prepare gas sensing material with high performance, herein, we reported highly atomically dispersed Pt functionalized oxygen vacancies enriched ZnO nanowires (Pt 1 /ZnO-O v ) via simple impregnation method. Gas sensing tests revealed that Pt 1 /ZnO-O v based gas sensor exhibits a high N 2 H 4 sensing performance. Pt SAs on ZnO increase the number of active sites, resulting in high response, good selectivity and rapid response speed to N 2 H 4 gas. N 2 H 4 -TPR and N 2 H 4 -TPD tests showed that Pt 1 /ZnO-O v has stronger oxygen and N 2 H 4 adsorbability. In addition, DFT results indicated that the oxygen vacancies on ZnO-O v facilitate Pt atoms incorporation into surface Zn sites, and Pt incorporation promotes N 2 H 4 adsorption across the sensor. In a word, enriched oxygen vacancies ZnO nanowire decorated with atomically dispersed Pt is an efficient sensing material for selective detection of N 2 H 4 .