Enhanced Photoluminescence and Stability of F−/Sm3+ Codoped CsPbBr3 Quantum Dot Glass Composites

All-inorganic perovskite quantum dots (QDs) (CsPbX 3 , X = Cl, Br, I) have shown great promise in optoelectronic applications but are severely hindered by their poor environmental stability and photoluminescence (PL) quenching. In this work, we report a novel approach for enhancing both stability and optical performance by insitu growth of CsPbBr 3 QDs within a borosilicate glass matrix, assisted by SrF 2 and Sm 2 O 3 codoping. The introduction of F − ions from SrF 2 modifies the glass network structure, promoting uniform nucleation and growth of QDs. Simultaneously, Sm 3+ doping, through partial incorporation into the CsPbBr 3 QD lattice, passivates surface defects and induces lattice contraction, which enhances quantum confinement effects. At the optimal Sm 3+ concentration of 1 mol%, the PL intensity increases by 332.8%, the photoluminescence quantum yield rises from 22.01% to 37.5%, and the fluorescence lifetime extends from 95.05 to 127.69 ns. The glass encapsulation provides long-term air and water stability, outperforming conventional ligand-capped QDs. Moreover, the developed materials were successfully applied in high-brightness green and white light-emitting diodes, achieving wide color gamut coverage (up to 129.4% NTSC), and demonstrated strong potential in forensic fingerprint visualization. These results provide a new pathway for developing stable, multifunctional perovskite-based optoelectronic materials. Graphical This study demonstrates a dual strategy of F − /Sm³ + codoping and glass encapsulation to significantly enhance the luminescence performance and stability of CsPbBr 3 quantum dots. Optimal Sm³ + doping (1 mol%) yields a 332.8% increase in photoluminescence intensity, improves quantum efficiency from 22% to 37.5%, and extends fluorescence lifetime to 127.69 ns. The glass matrix provides exceptional environmental stability, retaining 78.65% initial luminescence after 50 days in air. Resulting light-emitting diode devices achieve a wide color gamut covering 129.4% of the NTSC standard.