Natural Superlattice 2D Materials-based Volatile Memristor Promotes Artificial Nociceptor

Memristors show promise in neuromorphic computing because of their resistive switching properties and memory functions. The integration of high-performance memristor devices with sensors offers an effective pathway toward energy-efficient edge-computing systems. Herein, using the natural superlattice 2D material of BiTiS 3 composed of alternating BiS and TiS 2 sublayers, a volatile memristor with a low operating voltage is designed and demonstrated. The lattice distortion and sulfur vacancies in BiTiS 3 enhance ion migration and filament formation, as verified by conductive atomic force microscopy and X-ray photoelectron spectroscopy. This defect-induced enhancement of ion transport promotes the rapid formation and dissolution of conductive filaments, thereby implementing the memristors’ volatile switching behavior. The nociceptive functions, such as pain hypersensitivity and allodynia, are mimicked. This biomimetic nociceptor system effectively emulates the biological pain response pathways, converts physical stimuli into electrical signals, and generates the appropriate neural-like outputs. Our results highlight the potential of memristors in bioinspired electronics and reveal a new strategy for intelligent bionic devices and artificial sensing systems.