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Built-In Electric Field in Si/Ge Heterojunction Suppressing Li+ Trapping Boosts High Initial Coulombic Efficiency of Silicon Anodes

Journal 2026 · IF 3.2 · 21(6): e70700 · 发表于 2026 年 3 月 24 日
作者: Mingxia Zhang,Ting Wang,Yurong Wang,Yongjian Cui,Huaping Wang,Junze Liu,Hailong Wang
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摘要

Silicon (Si) anodes are promising candidates for surpassing the energy density limits of current lithium‑ion batteries, owing to the ultra‑high theoretical capacity (4200 mAh g −1 ). However, their practical implementation is hindered by irreversible lithium (Li) loss, which originates from the continuous formation of the solid electrolyte interphase (SEI) and the irreversible trapping of Li + within the silicon matrix due to sluggish Li + diffusion kinetics. To address these issues, a Si/Ge@C heterojunction anode has been designed. In this configuration, a conformal carbon coating effectively mitigates volume expansion and suppresses parasitic reactions on the Si surface, thereby reducing excessive SEI formation. Moreover, the Si/Ge heterojunction establishes a built‑in electric field oriented from Si to Ge, which reduces Li + trapping. This built‑in electric field not only facilitates Li + migration toward Ge during lithiation but also provides an additional driving force to extract trapped Li + from Si during delithiation. Consequently, the optimized Si/Ge@C anode delivers a high initial Coulombic efficiency (ICE) of 92.47% and maintains a high capacity of 539.77 mAh g −1 over 500 cycles at 200 mA g −1 .

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