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Self-powered UV-NIR broadband photodetector based on 2d-bi2Te3/3d-GaN heterojunction for image sensing

Journal 2026 · IF 7.6 · 发表于 2026 年 5 月 8 日
作者: Wen He,Duoduo Ling,Yanghao Bi,Dongbo Wang,Lei Chen,Yinze Zhang,Qiudan Geng,Ali Raza,Yiming Zhao,Sihan Zhang,Xiaoxue Yu,Bangsheng Li,Lianshe Fu,Jinzhong Wang
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摘要

Electron beam evaporation and post-annealing enable low-cost, high-quality Bi 2 Te 3 /GaN heterojunction fabrication. • The Bi 2 Te 3 /GaN photodetector achieves a specific detectivity of 2.01 × 10 12 Jones at 0 V. • Built-in field of heterojunction separates photogenerated carriers for self-powered UV-NIR detection. • This device is used as a single-pixel sensor and achieves high-quality multi-wavelength imaging. Self-powered broadband photodetectors are critical for energy-efficient optoelectronics in the Internet of Things, environmental sensing, and wearable imaging, yet achieving broadband response with high specific detectivity in a device through a scalable fabrication method remains a major challenge. In this work, we report a Bi 2 Te 3 /GaN heterojunctionphotodetector that integrates narrow- and wide-bandgap semiconductors to realize self-powered operation from ultraviolet to near infrared region. The Bi 2 Te 3 /GaN heterostructure is fabricated by depositing a homogeneous Bi 2 Te 3 film with high crystallinity on a GaN substrate through the electron beam evaporation method followed by a post-annealing. Without any external bias, the photodetector exhibits a broadband specific detectivity above 10 9 Jones and a fast response lower than 100 m s in the 367-850 nm spectral range, attributed to efficient photogenerated carrier separation across the heterojunctiondue to the built-in electric field at the interface. Under 367 nm light irradiation, the device achieves a responsivity of 80.39 mA/W and a specific detectivity of 2.01 × 10 12 Jones. The device also demonstrates excellent cycling durability, maintaining stable photoresponse over 100 cycles at 638 nm illumination, and supports high-resolution and multi-wavelength imaging. This work provides a cost-effective, scalable strategy for constructing Bi 2 Te 3 /GaN heterojunctions and highlights the potential of Bi 2 Te 3 -based detectors for next-generation self-powered broadband photodetection technologies. Download: Download high-res image (369KB) Download: Download full-size image

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