Toward visual intelligence: An integrated Sb2S3/CdS thin-film device for photoelectric detection and resistive switching

The integration of light sensing and information storage into a single device offers a promising pathway toward compact, energy-efficient visual intelligence systems. In this work, a novel antimony sulfide (Sb 2 S 3 )/cadmium sulfide (CdS) heterojunction-based dual-functional device that enables the synergistic integration of photoelectric detection (PD) and resistive switching (RS) within a unified architecture is reported. The results indicate that an optimized Sb 2 S 3 thin film thickness of 800 nm achieves a well-balanced performance between PD and RS functionalities. In the self-powered PD mode (0 V bias), the device exhibits optimal performance under 617 nm illumination, delivering a high responsivity of 3.8 × 10 3 mA/W, a specific detectivity of 1.2 × 10 14 Jones, and a fast response time on the microsecond scale. In RS mode, the device demonstrates a high on/off ratio, low operating voltages (∼0.75 V/−0.85 V), and excellent endurance and stability over repeated switching cycles. Furthermore, the device successfully emulates synaptic behaviors such as long-term potentiation/depression and demonstrates potential for neuromorphic computing, including digit recognition and reservoir computing. These results highlight the significant potential of Sb 2 S 3 photoelectric materials for multi-functional integrated devices, and provide valuable insights for developing next-generation high-performance intelligent sensing systems.