Electronic Blockade of Shunting Pathways via Dual Insulator Contacts for High-Efficiency Wide-Bandgap Perovskite Indoor Photovoltaics

Perovskite indoor photovoltaics (PIPVs) present great potential for powering Internet-of-Things (IoT)-integrated portable and low-power-consumption wireless electronics, owing to their theoretically high indoor power conversion efficiency (PCE(i)) under natural/artificial lighting conditions. Under low-light irradiance, suppressing shunting paths in PIPVs are of paramount importance to minimize interface defects induced losses in open-circuit voltage ( V oc ) and fill factor (FF). In this work, we propose a dual insulator contact (DIC) strategy that synergistically mitigates nonradiative recombination and shunting losses: (i) a grain boundary insulator contact (GIC) using insulating polymer poly(methyl methacrylate) (PMMA) to passivate grain boundary defects and (ii) a buried interface insulator contact (BIC) employing a hybrid PMMA/mesoporous alumina ultrathin composite interlayer to reduce heterointerface defects at the perovskite/hole transport layer junction. Leveraging this DIC approach, wide-band gap (WBG)-PIPVs achieve a PCE(i) of 44.36% (a power output of 127.94 µW cm −2 ) with a high V oc of 1.091 V and FF of 83.97% under a light-emitting diode (LED) (1000 lx, 288.4 µW cm −2 , and 2950 K). Remarkably, the devices under LED illumination remain high indoor performance with small V oc and FF deficits even under lower irradiance, delivering PCEs(i) of 43.08% ( V oc of 1.064 V and FF of 84.52%) at 600 lx, 40.24% ( V oc of 1.050 V and FF of 82.97%) at 400 lx, and 40.94% ( V oc of 1.020 V and FF of 82.83%) at 200 lx. The unencapsulated WBG-PIPVs also exhibit robust operational stability under continuous maximum power point tracking in under ambient LED lighting conditions, underscoring their practicality for IoT applications. The alternative text for this image may have been generated using AI.