Radiation Detection Performance of Gamma Rays From Melt- and Solution-Grown Inorganic Perovskite CsPbBr3 Semiconductor Detectors

Perovskite CsPbBr₃ has emerged as a promising room-temperature semiconductor radiation detector, synthesizable via both melt- and solution-growth methods. Herein, we systematically compare the $\gamma $ -ray detection performance of CsPbBr₃ crystals grown by inverse temperature crystallization (ITC) and vertical Bridgman (VB) method. ITC-grown crystals exhibit relatively low optical transmittance of ~65%, a short photoluminescence (PL) lifetime of ~6.07 ns, moderate resistivity of $6.06\times 10^{{9}}~\Omega {\cdot }\text {cm}$ , and a limited on–off ratio of ~350. In contrast, VB-grown crystals show markedly improved optoelectronic properties, including higher transmittance (75%~80%), a much longer PL lifetime (~36.75 ns), higher resistivity ( $1.08\times 10^{{10}}~\Omega {\cdot }\text {cm}$ ), and a significantly enhanced on–off ratio (~5300). These improvements indicate higher crystal quality and reduced defect density in VB-grown CsPbBr₃ crystals, leading to more efficient charge transport. Notably, the average hole mobility and mobility-lifetime product increase from 5.36 cm ${}^{{2}}{\cdot }\text {V}^{-{1}}{\cdot }\text {s}^{-{1}}$ and $4.45\times 10^{-{4}}~\text {cm}^{{2}}{\cdot }\text {V}^{-{1}}$ to 24.87 cm ${}^{{2}}{\cdot }\text {V}^{-{1}}{\cdot }\text {s}^{-{1}}$ and $3.58\times 10^{-{3}}~\text {cm}^{2}{\cdot }\text {V}^{-{1}}$ , respectively. Accordingly, asymmetric Au/CsPbBr₃/EGaIn detectors fabricated from VB-grown crystals deliver excellent average energy resolutions (ERs) of ~9.8% and ~5.5% for ²⁴¹Am and ⁵⁷Co $\gamma $ -ray sources, respectively, along with superior detector uniformity, whereas ITC-based detectors exhibit only moderate ERs of ~29.6% and ~22.6%. These results suggest that melt-grown CsPbBr₃ crystals are more favorable for high-performance $\gamma $ -ray detectors applications.