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1-Dodecyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide Interface Design  for Stable and Effective Perovskite Solar Cells

Journal 2026 · IF 5.9 · 19(12): e70812 · 发表于 2026 年 6 月 18 日
作者: Mengyao Guo,Jinxiong Wan,Jihuai Wu,Ying Wang,Weichun Pan,Shen Zhang,Guohua Chen,Yiming Xie,Xuping Liu,Zhang Lan
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摘要

Power conversion efficiency (PCE) is limited by the high density of defects and poor energy level alignment of the SnO 2 /perovskite (PVK) buried interface in perovskite solar cells (PSCs). Herein, a synergistic molecular interface engineering strategy is designed by using an ionic liquid, 1-dodecyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide salt (DMIMTFSI) to modify this critical interface. The strong electron-withdrawing TFSI − anion induces a downward shift of the conduction band of SnO 2 , thereby optimizing energy level alignment and facilitating electron extraction. Meanwhile, the DMIM + cation passivates interfacial defects through robust chemical interactions with Pb 2+ and I − ions. Furthermore, the long alkyl chain of DMIMTFSI templates the formation of an ordered porous PbI 2 morphology, which improves the crystallinity of the overlying PVK film. The DMIMTFSI modification reduces the trap-state density by 31.86%, prolongs the carrier lifetime by 39.42%, and increases the built-in potential from 0.95 to 1.02 V. Therefore, the DMIMTFSI-modified device achieves a PCE of 24.14%, significantly outperforming the pristine device of 22.34%. The unencapsulated modified device retained 87% of its initial PCE after being stored for 1000 h under ambient conditions, demonstrating excellent environmental stability. This work provides a viable multifunctional interface engineering pathway toward high-performance and stable PSCs. Graphical The insertion of the ionic liquid of 1-dodecyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (DMIMTFSI) into the interface of perovskite/tin oxide significantly improves the power conversion efficiency of perovskite solar cells from 22.34% to 24.14%. This is due to the synergistic effect of defect passivation, energy level modulation, and crystal growth promotion of DMIMTFSI.