摘要
SiO 2f /SiO 2 composites offer excellent dielectric and thermal stability, but reliable integration remains difficult due to the limitations of conventional metal brazes, including CTE mismatch and electrical conductivity. This study developed a novel all-dielectric brazing material, Bi 2 O 3 -B 2 O 3 (BB) glass, for joining SiO 2f /SiO 2 composite materials. The BB glass synthesized via melt-quenching exhibits an amorphous structure, a low glass transition temperature (T g =403°C), and an adjustable CTE (7-9×10 -6 /°C). Wetting experiments demonstrate excellent spreading on the SiO 2f /SiO 2 surface, with a contact angle as low as 16°. Density functional theory (DFT) analysis reveals that the formation of Bi-O-Si bonds and B-O-Si networks at the interface enhances the bonding strength. Differential charge density and density of states (DOS) results indicate that the electronic structure of BB glass improves dielectric response and reduces insertion loss in the GHz frequency band. BB glass overcomes the shortcomings of traditional brazing materials, providing a theoretical and technical foundation for reliable joining of SiO 2f /SiO 2 composite materials in extreme environments. Download: Download high-res image (353KB) Download: Download full-size image
危险品化学品经营许可证(带存储)