BandGap Modulated Charge Gating of Semiconductor Coatings Stabilizes Zinc Metal Anodes

Hydrogen evolution reaction (HER) and uncontrolled dendrite growth remain persistent challenges for aqueous Zn-ion batteries (AZIBs). In this study, the Y element is utilized to adjust the bandgap width of the anode coating, thereby serving as electron transfer gating and consequently suppressing HER from a dynamic perspective. The Gibbs free energy ( ΔG H* ) data for H * adsorption reveal that the presence of the Y can hinder the desorption of H 2 from the surface of the semiconductor coating. It effectively restrains HER from a thermodynamic viewpoint. Furthermore, the improved zincophilicity of the amorphous wide-bandgap semiconductor coating offers a multitude of uniform nucleation sites for Zn 2+ deposition. A balance between H * adsorption and Zn 2+ affinity is achieved by this wide bandgap semiconductor, enabling strong HER inhibition and highly efficient Zn-induced deposition. The symmetric cell achieves stable cycling for over 6700 h at 2 mA cm −2 and 1 mAh cm −2 . Even under a high current density of 10 mA cm −2 and 5 mAh cm −2 , a cycle life of 1200 h is maintained. The Zn–V full cell exhibits a cycling lifespan of 3800 cycles at 5 A g −1 .