Enhanced Oxygen Vacancies in Ni-Doped SnO2 Nanorods via Aerosol-Assisted Chemical Vapor Deposition for Low-Concentration Hydrogen Detection

Hydrogen is a clean energy carrier essential for carbon neutrality, but its invisible and odorless nature poses significant safety risks, particularly during low-concentration leaks. Although metal oxide semiconductor (MOS) sensors offer fast response and high sensitivity, their ability to detect ppb-level hydrogen remains limited. In this work, we present a high-performance hydrogen gas sensor based on nickel-doped tin dioxide (Ni-SnO2) nanorods, directly grown on planar electrodes via aerosol-assisted chemical vapor deposition (AACVD). By optimizing the Ni doping ratio and nanorod morphology, the 3 wt% Ni-SnO2sensor achieves a low detection limit of 100 ppb for H2, demonstrating promising potential for low-concentration hydrogen detection. Moreover, the sensor exhibits outstanding selectivity, with a response to 100 ppm H2nearly six times higher than that to the next most responsive interfering gas (NH3). Comprehensive XPS and Raman analyses reveal that Ni doping introduces abundant oxygen vacancies and lattice defects, which are the key origins of the enhanced sensing performance. Notably, the 3 wt% Ni-SnO2sensor strikes an optimal balance between lattice defects and structural stability, delivering both high sensitivity and good moisture resistance with minimal baseline drift over weeks of operation. This work establishes a facile and scalable AACVD strategy for engineering defect-rich SnO2nanostructures, enabling sub-ppm hydrogen detection with high selectivity and long-term stability—addressing a critical gap in practical hydrogen safety monitoring.