Bias-modulated transition between volatile and non-volatile switching of CZTS-MoO2 memristors

Memristors are key to brain-inspired neuromorphic computing, controllable modulation of volatile and non-volatile resistive switching characteristics is crucial for expanding their multi-functional applications. Herein, an Ag/CZTS-MoO 2 /Mo memristor is proposed, which exhibits bias-modulated transition between volatile and non-volatile resistive switching. Volatile switching behavior is observed at low bias (≤1.0 V), while stable non-volatile switching emerges at elevated biases (≥1.4 V) with an On/Off ratio of ∼10 3 . Moreover, the set voltage decreases from −0.70 V to −0.46 V as the bias voltage rises, accompanied by improved switching uniformity and stability. This phenomenon originates from the formation of more robust conductive filaments within the resistive switching layer under large applied bias. These findings demonstrate an effective strategy to modulate volatile and non-volatile switching based on CZTS, and highlight the great potential of CZTS for multifunctional memory and neuromorphic applications.