Bi2TeO6-Interfaced Perovskite/Silicon Heterojunction Photodetectors With Pyro-Phototronic Enhancement for Intelligent Anti-Counterfeiting

As machine vision increasingly demands high-performance optoelectronics, solution-processed perovskites (PVKs) integrated on silicon (Si) offer a viable route to surpass conventional photodetector (PD) limits in ultraviolet (UV) sensitivity and spectral selectivity the integration. However, traditional monolithic integration is strictly hindered by severe lattice mismatch and interfacial defects. Here, we report a self-powered PVK/Si PD enabled by an engineered B i 2 Bi 2 ${\rm Bi}_{2}$ T e O 6 TeO 6 ${\rm TeO}_{6}$ interlayer. The [ B i 2 ⁢ O 2 ] 2 + [ Bi 2 ⁢ O 2 ] 2 + ${[{\rm Bi}_{2}{\rm O}_{2}]}^{2+}$ layers and distorted corner-sharing [ T e O 4 ] 2 − [ TeO 4 ] 2 − ${[{\mathrm{TeO}}_{4}]}^{2-}$ octahedra promote high-quality PVK crystallization and interfacial compatibility, while simultaneously generating a pyro-phototronic effect, thereby amplifying the photoelectric conversion process. As a result, a dual-band PD is demonstrated, exhibiting strong pyro-phototronic enhancement (505 % at 320 nm) in the UV and exceptional specific detectivity in the visible regime ( 6 . 5 × 1 0 1 1 6.5 × 10 11 $6.5\times 10^{11}$ Jones at 550 nm), outperforming conventional Si-based PDs in both UV sensitivity and spectral selectivity. Integrating this capability with a convolutional neural network (CNN), we further develop a dual-wavelength intelligent anti-counterfeiting recognition platform based on CNN, achieving robust authentication performance. This work establishes a general interfacial strategy for integrating PVKs on Si and highlights the combined advantages of pyro-phototronics and intelligent optical recognition for next-generation photodetection and Si-compatible optoelectronic systems.