Modulating the electronic structure of Ti3C2Tx MXene with chitosan for robust resistive switching memory device

Two-dimensional Ti 3 C 2 T x MXene exhibits promising application prospects in the field of resistive random-access memory (RRAM) owing to its unique layered structure, abundant surface functional groups, and tunable band structure. However, the modulation of its electronic structure is critical for promoting the application of Ti 3 C 2 T x MXene in such semiconductor devices. Herein, chitosan (CS) was incorporated with Ti 3 C 2 T x MXene to construct CS-MXene composite films, which were subsequently employed as the resistive layer in the RRAM devices. The conductivity of Ti 3 C 2 T x MXene can be switched from a metallic-like state to a semiconducting state, and the resistive switching behaviors of CS-MXene hybrid films could be regulated by adjusting the mass ratio of Ti 3 C 2 T x MXene to CS. When the mass ratio of two components was 0.5, the as-fabricated Al/CS-MXene/ITO/glass device exhibited the most outstanding resistive switching (RS) performance, characterized by a lower operating voltage, a higher on/off ratio, excellent retention, and reliable endurance. Mechanistic analysis revealed that the RS behavior originates from the electron trapping/detrapping dynamics within the CS-MXene resistive layer. This work demonstrates high-performance RRAM devices based on CS-MXene composites, offering a feasible strategy for modulating the electronic structure of two-dimensional Ti 3 C 2 T x MXene. Chitosan (CS) was incorporated with Ti 3 C 2 T x MXene to construct CS-MXene composite films, which were subsequently employed as the resistive layer in the RRAM devices. The conductivity of Ti 3 C 2 T x MXene can be switched from a metallic-like state to a semiconducting state, and the resistive switching behaviors of CS-MXene hybrid films could be regulated by adjusting the mass ratio of Ti 3 C 2 T x MXene to CS. When the mass ratio of two components was 0.5, the as-fabricated Al/CS-MXene/ITO/glass device exhibited the most outstanding resistive switching (RS) performance, characterized by a lower operating voltage, a higher on/off ratio, excellent retention, and reliable endurance. Mechanistic analysis revealed that the RS behavior originates from the electron trapping/detrapping dynamics within the CS-MXene resistive layer. Download: Download high-res image (133KB) Download: Download full-size image