Carbazole copolymer: Cu nanocomposite films for ternary resistive random access memory

Multi-level storage is an effective way to increase storage density compared to binary storage. In this study, a D–A copolymer containing two different electron-withdrawing receptors was designed and synthesized, and the polymer was applied to resistive random access memory (RRAM), which exhibited flash-type ternary memory behaviour. In addition, Cu nanoparticles (NPs) were embedded in the polymer to improve the prepared storage performance. In addition, Cu NPs were embedded in the polymer to improve the prepared storage performance. The memory devices based on PCz–BB:Cu nanocomposites also exhibit flash memory performance with a threshold voltage drop from − 1.05/ − 1.95 to − 0.45V/ − 0.90V, an ON2/ON1/OFF current ratio increase from 1905:15:1 to a boost of 8950:50:1, and the three resistive states of the devices being stable for more than 3h and 10 4 cycles. The mechanism of resistive switching is explained in terms of charge trapping and conducting filament theory. This work contributes to the rational design and fabrication of high-density storage materials.