Piezoelectric-photocatalysis assisted chemical mechanical polishing: A cost-effective and efficient approach to atomic-scale processing of RS-SiC surfaces

Photocatalysis assisted chemical mechanical polishing is considered an effective method for achieving atomic-scale flatness on reaction-sintered silicon carbide (RS-SiC) surfaces. However, the recombination of photogenerated carriers severely limits its further development. Meanwhile, photoelectric and other multi-energy field catalysis assisted chemical mechanical polishing can solve the above problems, but it will significantly increase energy consumption and pollution, but it will significantly increase energy consumption and pollution. In this study, t-BaTiO 3 was regarded as catalyst, and a piezoelectric-photocatalysis assisted chemical mechanical cost-effective and efficient polishing technology was proposed. Polishing pressure and shear force induce a built-in electric field in t-BaTiO 3 , thereby inhibiting the recombination of photogenerated carriers. The experimental results showed that, compared with photocatalysis oxidation, pressure-induced piezoelectric-photocatalysis treatment increased the oxygen content of the RS-SiC surface by 11.77%, reduced the surface hardness by 10.45 GPa, and yielded a polished surface roughness as low as 0.18 nm. More importantly, compared with the other methods, this approach reduced both cost and energy consumption by 50%. These findings confirm that the proposed method is an efficient and environmentally friendly polishing technology with substantial potential to advance chemical mechanical polishing.