摘要
Enhanced quantum-cutting (QC) materials are highly desirable for promising applications such as solar cells. In this work, a series of Ce 3+ , Gd 3+ , and Yb 3+ tri-doped phosphors using Y 2 SiO 5 as the host were synthesized via a solid-state reaction. X-ray diffraction confirms that the dopants do not alter the monoclinic phase of Y 2 SiO 5 . Photoluminescence spectroscopy reveals that, the optimized tri-doped phosphor exhibits intense near-infrared (NIR) emission centered at 976 nm under UV excitation. Mechanism investigation reveals that Gd 3+ preferentially occupies the 7-coordinate Y2 site (associated with the Ce 3+ 392-nm emission), displacing Ce 3+ ions toward the 6-coordinate Y1 site (associated with the 425-nm emission). The Y1-site Ce 3+ emission at ∼425 nm (≈23,500 cm −1 ) is energetically closer to twice the Yb 3+ absorption energy (≈20,000 cm −1 ) than the Y2-site emission at ∼392 nm (≈25,500 cm −1 ), making the Y1 site more favorable for cooperative energy transfer to Yb 3+ pairs. This site-selective occupation effect significantly enhances the quantum-cutting efficiency. Furthermore, the synthesized tri-doped phosphor demonstrates superior performance in NIR phosphor-converted LEDs (pc-LEDs), achieving an electrical-to-optical conversion efficiency 1.55 times that of the co-doped counterpart. The output power of the tri-doped NIR LED is enhanced to 206.4% of that of the co-doped device. For solar cell applications, the short-circuit current density (J SC ) of the tri-doped device reaches 2.47 mA/cm 2 , with a power conversion efficiency (η) of 10.58%. The tri-doped phosphor solar cell exhibits an extra 0.1% enhancement in conversion efficiency compared to the co-doped counterpart. These results highlight the potential of Y 2 SiO 5 :Ce 3+ ,Gd 3+ ,Yb 3+ as an efficient spectral converter for boosting the energy yield of silicon photovoltaics.
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