Perovskite-matrix embedded CsPbBr3 quantum dots for efficient and stable light-emitting diodes

Perovskite-matrix embedding boosts CsPbBr₃ PeQD PLQY from 45.4% to 81.3%. • Matrix embedding reduces trap-state densities and balances carrier transport. • PeQDs gain enhanced stability against air, heat, and UV irradiation. • PeLED achieves 6.8× EQE (6.0%) and 9.7× lifetime (1254 s) enhancements. Halide perovskite quantum dots (PeQDs) are promising emitters for light-emitting diodes (LEDs), yet translating their excellent solution-state luminescence into high-quality films remains challenging because of high defect density and poor film stability. Here, to solve these issues, a perovskite-matrix embedding strategy is developed by embedding CsPbBr 3 PeQDs into a perovskite matrix. The matrix not only retains PeQD-related emissive characteristics, but also suppresses nonradiative recombination and trap-assisted excited-state decay, boosting photoluminescence quantum yield from 45.4% to 81.3%. This strategy contributes to forming a uniform and dense emissive layer, reducing effective electron/hole trap-state densities, and improving carrier-transport balance. Besides, matrix embedding enhances the thermal and environmental stability of PeQDs against air, heat, and ultraviolet irradiation. Benefiting from such merits, the resulting perovskite LED exhibits significantly improved electroluminescent performance: maximum luminance by a factor of 2.8 to 4245 cd m −2 , external quantum efficiency by a factor of 8.4 to 6.7%, and operational lifetime by a factor of 16.5 to 1745 s under constant-current operation at 100 cd m −2 . This strategy provides a viable route for efficient and stable PeQD-based LEDs.