JOURNAL OF ELECTRONIC MATERIALS
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2025
·
IF 2.5
Hou Guangya,Li Wei,Fang Guoliang,Zhang Jianli,Chen Qiang,Tang Yiping
The development of nickel-based multi-alloy catalytic electrodes for methanol oxidation reactions (MOR) holds significant potential for advancing new energy technologies. The study fabricated a biomorphic Ni 6 MnFeCoCu multi-element porous alloy foil via filter paper template-assisted impregnation and carbonization–reduction. The effect of selenization treatment on the phase composition, microstructure, and MOR performance of Ni 6 MnFeCoCu has been investigated. The results showed that biomorphic nickel-based multialloy foils inherited the porous fibers structure of the filter paper template. The main phase of Ni 6 MnFeCoCu are a face-centered cubic multi-element metallic phase and MnO phase. With increasing selenization temperature, the large particles on the surface of the fiber struts gradually presented; Ni in Ni 6 MnFeCoCu preferentially form NiSe 2 with Se, followed by Cu and Fe, resulting in the formation of biphasic nickel selenide (NiSe 2 and Ni 3 Se 4 ), Cu 2− x Se, and Cu 0.41 Fe 0.60 Se 1.99 at 400 ℃. The locally controlled charge, attributed to the synergistic effect of multi-metals and the incorporation of Se, enabled the optimized Ni 6 MnFeCoCu-Se 350 catalytic electrode to exhibit high methanol oxidation reaction (MOR) catalytic activity and excellent cycling stability. Compared to the current density value (@ 0.8 V) of the porous Ni p , the values of the Ni 6 MnFeCoCu and optimized Ni 6 MnFeCoCu-Se 350 increased by 13.3% and 30.4% for methanol oxidation, respectively. After a chrono-current test of 10,800 s, the current density of the electrode was retained at 92.2% of its original values. These findings provide a strategic pathway for designing lightweight, efficient, and durable multi-metal catalytic electrodes for sustainable energy applications. Graphical
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ACS Nano
·
2026
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IF 17.3
Chen Li,Chengyu Li,Zheng Tang,Ke Liu,En Chen,Yiming Wang,Yazhou Zhou,Jing Guo,Yonggang Wang
Interlayer engineering offers a compelling strategy for tailoring emergent quantum states in van der Waals materials. The latest discoveries of nickel-based superconducting materials have once again ignited extensive interest in exploring transition-metal-based high-temperature superconductors. Two-dimensional metal-centered geometry, subtle valence regulation, and interactions dominated by interlayer stacking are key to achieving the superconducting state. Here, we present that pressure-mediated interlayer sliding in the antiferromagnetic honeycomb lattice CrPSe3 triggers a cascade of electronic transitions, including an insulator-to-metal crossover, the emergence of a density-wave-like order, and possible superconductivity. The resulting phase diagram reveals a maximum transition temperature of 5.8 K concomitant with complete suppression of the density-wave-like order at 30.1 GPa. Comprehensive structural analyses uncover successive interlayer sliding accompanied by aberrant compressibility and pronounced volume collapse. Atomic-resolution imaging corroborates the irreversible sliding process, leading to a distinct metastable electronic state upon decompression. These insights underscore interlayer sliding as a powerful tool for manipulating quantum states in van der Waals materials.
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Nanomaterials
·
2026
·Vol. 16
·期 3
·205
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IF 4.8
Qiya Liu,Xinsheng Yang,Min Zhang
Magnetic topological insulators (TIs) are promising candidates for realizing the quantum anomalous Hall effect (QAHE) and advancing the development of next-generation low-energy transistors and electronic devices. Doping Bi2Se3with nano-carbon can introduce magnetic order and open the Dirac gap without introducing extrinsic magnetic impurities. In this work, the C0.06Bi2Se3single crystal was prepared using the Bridgman method, and their electrical and magnetotransport properties were systematically investigated. Temperature-dependent resistivity and magnetoresistance measurements revealed a magnetic-field-induced metal–insulator-like transition near 152 K. Angle-resolved photoemission spectroscopy (ARPES) detected an energy gap of about 43 meV at the Dirac point, confirming that carbon doping modulates the surface state and opens the gap. Pronounced Shubnikov–de Haas oscillations indicate high carrier mobility in C0.06Bi2Se3. Furthermore, the temperature-dependent Kerr spectra shows that the spin relaxation behavior of C0.06Bi2Se3differs significantly from that of pure Bi2Se3; the relaxation process of spin electrons from the surface state (τs) dominates the spin dynamics and exhibits distinct trends around 30 K and 150 K due to the interplay of the Dirac gap and impurity-induced states. These results demonstrate the potential of magnetic topological insulator C0.06Bi2Se3for novel electronic and spintronic applications.
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Journal of Materials Chemistry A
·
2026
·
IF 9.2
Tengfei Wang,Qing Pang,Boyu Liu,Kaimin Fan,Hongyu Wang
Phase interface engineering plays an essential role in the design and development of effective electromagnetic wave (EMW) absorption materials and energy storage devices. Nevertheless, the development of multifunctional materials that can simultaneously tackle these challenges remains a significant difficulty. In this study, we developed multifunctional defect-rich 1T/2H-WX2/RGO (X = S, Se) nanosheets utilizing a simple solvothermal and freeze-drying technique. The synthesized 1T/2H-WX2/RGO nanosheets exhibited superior EMW absorption and electrochemical characteristics. The effective absorption bandwidth (EAB) reached 7.68 GHz at a thickness of 3.10 mm. This excellent performance can be attributed to various loss mechanisms, including conductive loss, defect-induced dipole polarization loss and interface polarization loss. Moreover, the 1T/2H-WS2/RGO-15 nanosheets attained a high specific capacitance of 390.44 F g−1 at a current density of 1 A g−1. In contrast, the 1T/2H-WSe2/RGO-4 nanosheets demonstrated impressive cycling stability of 71.81% after 5000 cycles, which can be attributed to the active sites provided by its rich heterogeneous interface. The energy density of the 1T/2H-WS2/RGO-15 nanosheets was measured to be 4.27 Wh kg−1 at a power density of 400 W kg−1. This research offers valuable insights into the development of multifunctional materials that can serve as EMW absorbers and supercapacitor electrodes.
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ACS Applied Materials & Interfaces
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2026
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IF 8.2
Zeyi Guan,Yidong Huang,Suye Li,Liuyan Zhang,Renyu Zhou,Lichan Wu,Danting Wu,Gengzhe Shen,Guibin Tan
Designing electrocatalysts that are both highly efficient and remarkably stable for the oxygen evolution reaction (OER) holds immense significance in enhancing the performance efficiency of water electrolysis within renewable energy systems. In this study, a MoSe2@NiFe2O4 p–n heterostructure was constructed to effectively regulate the interfacial built-in electric field (BIEF), thereby tuning the electronic distribution and transfer behavior and optimizing the adsorption/desorption reaction kinetics. Structural and electronic characterizations confirmed a pronounced work function difference (Δ = 1.9 eV) between MoSe2 and NiFe2O4, which drives spontaneous electron migration from MoSe2 to NiFe2O4. This leads to the generation of a strong BIEF at the interface, which, in turn, promotes efficient separation and transfer of charge. Benefiting from this, the MoSe2@NiFe2O4 electrode exhibits outstanding OER performance in 1.0 M KOH, requiring only 212 mV to achieve a current density of 10 mA cm–2 and 290 mV to deliver 1000 mA cm–2, while sustaining a minimal overpotential and demonstrating exceptional stability, even when subjected to high current densities, thereby outperforming the majority of previously reported OER catalysts. This work demonstrates that exploiting work function differences to construct and regulate interfacial BIEF offers a new strategy and theoretical foundation for designing highly efficient OER electrocatalysts via interfacial engineering.
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GREEN CHEMISTRY
·
2026
·
IF 10.6
Qizhou Xue,Jiaqi Feng,Boyang Liu,Yanlin Wang,Aofei Cheng,Chongyang Jiang,Xiaofu Sun,Min Wang,Yinge Bai,Shaojuan Zeng,Xiangping Zhang
Non-metal element doping has emerged as an effective strategy to modulate electrochemical CO2 reduction reaction performance. However, current research predominantly focuses on individual doping configuration (interstitial doping or substitutional doping), and systematic investigations into the effects of different doping types on electrocatalytic activity remain scarce. This limitation significantly hinders the rational design and broader implementation of doping strategies. In this work, we successfully prepared two distinct selenium (Se)-doped bismuth catalysts (interstitial doping and substitutional doping) and systematically investigated the effects of these two doping configurations on the performance of CO2 electroreduction to formate. Detailed experimental and theoretical studies revealed that Se interstitial doping facilitated more efficient electron transfer to the active Bi sites compared to substitutional doping, thereby enhancing the stability of key intermediate *OCHO and lowering the free energy barrier for its formation. Meanwhile, Se interstitial doping more effectively suppressesd the hydrogen evolution reaction. As a result, Se interstitial doping Bi displayed > 90% formate Faradaic efficiency (FE) at an ampere-level current density (0.9 A cm-2 – 1.3 A cm-2) in pH-universal (acidic, pH=1.2; neutral, pH=7; and alkaline, pH=14) electrolytes and a maximum formate FE of 98.1% was achieved in alkaline electrolyte. This work provides new insights into the structure-function relationship of Se doping configurations and offers a rational design strategy for developing highly selective and efficient catalysts for CO2 electroreduction.
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Advanced Science
·
2026
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IF 14.1
Zhaohui Wang,Xiaojin Deng,Xujuan Huang,Yuhang Pan,Yao Qin,Lu Zhang,Le Xu,Tianyi Qin,Deteng Zhang,Yi Ma,Yalong Wang
The lack of selective antifungal agents remains a major clinical challenge. Here, we discover facet-polysaccharide matching between polyvinylpyrrolidone-directed tetragonal CuFeSe 2 nanocrystals (CFS-P) and fungi drives ultrapotent and highly selective fungicidal activity. High-index facets uniquely exposed on CFS-P show markedly enhanced affinity for mannan, the dominant polysaccharide of the fungal outer cell wall, as validated by DFT, molecular dynamics, and calorimetry. Mannan recognition promotes efficient fungal internalization of CFS-P and its preferential accumulation in vacuoles, leading to vacuolar cavitation, calcium overload, mitochondrial hyperpolarization, and transcriptional reprogramming of metal and vacuole-associated pathways. CFS-P achieves therapeutic efficacy comparable to amphotericin B while exhibiting superior mammalian biocompatibility. This work reveals a previously unrecognized wall-vacuole disruptive antifungal mechanism and enlightens the exploration of facet-encoded biological recognition in anti-infective design.
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Materials
·
2026
·Vol. 19
·期 7
·1337
·
IF 3.7
Xiaogong Lv,Shumin Zhang,Yanchun Yang,Guonan Cui,Wenliang Fan,Xing Yue
Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a candidate thin-film photovoltaic material; however, its performance is restricted by innate defect-induced nonradiative recombination. Low-concentration Ge doping has been identified as an efficient way to mitigate these defects, but the selenization temperature remains an important process parameter that governs the structure and optoelectronic characteristics of CZTSSe absorbers. In the present work, low-concentration Ge-doped Cu 2 ZnSn 0.95 Ge 0.05 S 4 (CZTGS) precursor films were synthesized through a green, n-butylammonium butyrate-based solution approach. The effects of the selenization temperature (530–570 °C) on the microstructure, composition, and photovoltaic performance of Cu 2 ZnSn 0.95 Ge 0.05 (S,Se) 4 (CZTGSSe) films and devices were comprehensively investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectrometer (EDS), atomic force microscopy (AFM) were performed to comprehensively characterize the synthesized samples, and the results suggested that the selenization temperature dramatically altered the film grain growth, crystallinity, elemental retention and surface roughness. Specifically, the film that underwent selenization at 550 °C presented the best crystallinity, which was accompanied by large-scale even grains, efficient Ge 4+ addition to the kesterite lattice and the lowest surface roughness. These better properties in terms of structure and composition resulted in the lowest carrier transport resistance ( R s = 8.6 Ω∙cm 2 ), improved recombination resistance ( R j = 5.9 kΩ∙cm 2 ), inhibited nonradiative recombination, and prolonged carrier lifetime ( τ EIS = 35.8 μs). Therefore, the resulting CZTGSSe thin-film solar cell had an 8.69% better power conversion efficiency (PCE), while its open-circuit voltage ( V OC ) was 0.42 V, the fill factor (FF) was 55.51%, and the short-circuit current density ( J SC ) was 37.71 mA·cm −2 . Our results elucidate the mechanism by which the selenization temperature regulates low-concentration Ge-doped kesterite devices and provide more insights into the optimization of processes for cost-effective, high-performance, and green thin-film solar cells.
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ACS Applied Bio Materials
·
2026
·
IF 5.6
Xiuying Chen,Haoqin Zheng,Lile Dong,Peng Zhang
Triple-negative breast cancer (TNBC) poses a serious threat to the lives and health of patients, as traditional treatments are limited by psychological burden, systemic toxicity, or drug resistance. Photonic hyperthermia triggered by the second near-infrared (NIR-II) window is a promising minimally invasive strategy. Herein, we synthesized SnSe nanosheets via a simple, scalable method for NIR-II-triggered photonic tumor hyperthermia. SnSe nanosheets exhibited irregular lamellar structures with uniform Sn/Se distribution, favorable biocompatibility, and prominent photothermal performance under NIR-II irradiation. Under NIR-II irradiation, the SnSe+NIR-II group significantly suppressed tumor growth. This work offers a platform based on NIR-II light-induced photonic tumor hyperthermia, providing a minimally invasive strategy for TNBC treatment.
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CRYSTENGCOMM
·
2026
·
IF 2.4
Shulei Liang,Yingjun Zhou,Yujun Li,Chuanhe Ma,Hailong Wang
This study investigated the impact of MoOx blocking layer prepared by magnetron sputtering and air-annealing methods on the photoelectric performance of CZTSSe solar cells. The results showed that the MoO2 layer prepared by sputtering method exhibited more uniform and dense surface morphology, with an optimal thickness of 10 nm for the cell's photoelectric performance. The electrochemical impedance spectroscopy (EIS) analysis revealed that the MoO2 blocking layer effectively suppressed carrier recombination, increasing the recombination resistance (Rct) from 4516 Ω to 11342 Ω and significantly enhancing the minority carrier lifetime (τ) from 32 μs to 146 μs. Additionally, light response (I-T) testing demonstrated that devices with the MoO2 blocking layer achieved a peak photocurrent (Imax) four times higher than that of the control group under high duty cycle (PWM=90%), with an outstanding on/off ratio of 7×10 5 and a shortened pulse rise time (τrising) of 2 μs.These results confirm that the MoO2 blocking layer markedly enhanced carrier mobility and dynamic response by effectively suppressing the formation of MoSe2 and mitigating the decomposition of the CZTSSe absorber layer. Consequently, the device's power conversion efficiency (PCE) was boosted from 8.26% to 11.45%. This work provides valuable insights into interface engineering for developing high-performance CZTSSe photovoltaic devices.
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Advanced Optical Materials
·
2026
·
IF 7.2
Zihao Yang,Haigang Hou,Xiangzhao Zhang,Dongliang Zhang,Quanjiang Lv,Jian Yang,Guiwu Liu,Songhua Cai,Junlin Liu,Guanjun Qiao
Simultaneously achieving high photothermal and thermoelectric conversion efficiencies in flexible thin films remains challenging, limiting the performance of ultra-broadband photothermoelectric (PTE) detectors. This study introduces a two-step approach involving silver pre-deposition and vapor-phase selenization, based on a solid-vapor diffusion mechanism, to fabricate a flexible carbon nanotube (CNT) film modified with Ag 2 Se nanoparticles (CNT@Ag 2 Se), synergistically enhancing its light absorption and thermoelectric properties. By optimizing the selenization time, the carrier transport behavior was effectively modulated, yielding a maximum power factor of 84.35 µW·m −1 ·K −2 at room-temperature after 20 min of treatment. The incorporation of Ag 2 Se nanoparticles also significantly improved light absorption and photothermal conversion, enabling broad-spectrum absorption across 200–2500 nm with a 47% enhancement in photothermal performance. As a result, the CNT@Ag 2 Se film exhibited a doubled voltage output compared to pristine CNT films, along with ultra-broadband detection capability. Laser position-dependent measurements and synchronized infrared thermal imaging confirm that the photovoltage originates from a light-induced temperature gradient driving directional carrier diffusion, illustrating a photothermal-thermoelectric coupling mechanism. Systematic characterization and simulation further reveal the underlying mechanisms for the performance improvement. Furthermore, the film demonstrates excellent flexibility, retaining a stable output under multiple bending cycles and demonstrating outstanding non-contact sensing capabilities.
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NANO LETTERS
·
2026
·
IF 9.1
Yang Chen,Mouyuan Liu,Song Luo,Peng Wan,Dongyan Liu,Dingyi Shen,Jia Li,Bo Li,Hong Wu,Ruixia Wu,Xidong Duan
Two-dimensional materials hold great promise for postsilicon electronics, but their conventional high-temperature synthesis hinders integration with back-end-of-line processes. Here, we present an enclosed chemical vapor transport (ECVT) process for growing centimeter-scale uniform and continuous monolayer MoS2 and WS2 films at temperatures as low as 280 and 350 °C, respectively. The confined geometry of the ECVT system enhances the partial pressure of active molecular species, thereby reducing the energy barriers for both atomic nucleation and lateral migration of 2D materials on the substrate. The ECVT-synthesized MoS2 nanoflakes at 350 °C exhibit a single-domain size of ∼7 μm, an ultralow defect density of 1.14 × 1013 cm–2, a room-temperature mobility of ∼20 cm2 V–1 s–1, and an on/off ratio of ∼107 of the related transistors. This work may provide a viable pathway for BEOL-compatible 2D material integration.
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