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JOURNAL OF ELECTRONIC MATERIALS · 2017 ·Vol. 46 ·期 7 ·4497-4502 · IF 1.579

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

Huang Hang,Hu Hailong,Zhu Jingguang,Guo Tailiang

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm 2 /V s, threshold voltage of −8.5 V, and on/off current ratio >10 6 . Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

研究领域: 材料科学 · 电子器件 · 纳米技术 · 应用物理学
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JOURNAL OF THE AMERICAN CERAMIC SOCIETY · 2014 ·Vol. 97 ·期 11 ·3555-3560 · IF 2.428

Spinel Mg(Al, Ga)2O4 Solid Solution as High-Performance Microwave Dielectric Ceramics

Songping Wu,Juanjuan Xue,Yingxian Fan

Spinel Mg(Al 1− x Ga x ) 2 O 4 ( x = 0–1) solid solutions were synthesized via solid-state method. Replacement of Al 3+ by Ga 3+ in MgAl 2 O 4 gave rise to the expansion of the lattice, as well as blueshifts of FT-IR and Raman peaks. The homogeneous solid solutions, high relative densities, large grain sizes, and compact microstructures resulted in excellent microwave dielectric properties for spinel Mg(Al 1− x Ga x ) 2 O 4 ( x = 0.6) ceramics sintered at 1485°C: that is, ε r = 8.87, Q × f = 107 000 GHz (at 14.8 GHz), and τ f = −16 ppm/°C. Spinel-structured Mg(Al 1− x Ga x ) 2 O 4 ( x = 0–1) solid solutions possessed low sintering temperatures, wide temperature regions (~100°C), and small negative τ f values. These outstanding performance make Mg(Al, Ga) 2 O 4 a promising candidate material for millimeter-wave devices.

CAS / MDL: 1344-28-1 12024-21-4
研究领域: 材料科学 · 陶瓷工程
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Materials Research Express · 2022 ·Vol. 9 ·期 12 ·125002 · IF 2.025

Antibacterial, efficient and sustainable CS/PVA/GA electrospun nanofiber membrane for air filtration

Bochen Yang,Jing Wang,Le Kang,Xiaoping Gao,Ke Zhao

Since the outbreak of the COVID-19 epidemic, a large number of disposable protective masks have been manufactured and used, and the abandonment of masks has caused enormous pollution. In this paper the chitosan (CS), polyvinyl alcohol (PVA), and water were used as raw materials and the nanofiber membranes were prepared by electrostatic spinning. The CS/PVA fiber membranes were crosslinked by glutaraldehyde hydrochloric acid vapour. The fiber morphology, hydrolysis resistance, antibacterial properties, chemical structure, thermal stability and filtration performance of nanofiber membranes were characterized. Results shows that the antibacterial performance of the crosslinked composite nanofibers exceeds 97%, the thermal stability is improved, and the fiber morphology is not destroyed. The hybridized fiber membrane has high filtration performance, excellent antibacterial and hydrolysis resistance, which broadening the PVA fiber membrane application. It is expected to replace traditional protective materials and relieve environmental pressure.

CAS / MDL: 9012-76-4
研究领域: 材料科学 · 环境科学 · 生物学
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SURFACE & COATINGS TECHNOLOGY · 2024 · IF 5.3

Corrosion inhibition of Ga-based thermal interface materials with Ni coating on Cu substrate

Guangyin Liu,Yuhui Zhang,Chaofan Ma,Qin Tang,Hanbing Li,Shiqi Chen,Jun Shen

The gallium (Ga) base liquid metal (LM) with high thermal conductivity and deformability is applied widely in thermal management in electrical systems. However, Ga readily reacts with Cu to form intermetallic compounds (IMCs), which can cause failure in electronic devices. Herein, the thermal interface material (TIM) with Ga and diamond is prepared to analyze the reaction behavior of TIM and Cu/Ni-plated Cu under an aging test at 125 °C. The results show that Ga reacts with Cu substrate and forms CuGa 2 bulk. Moreover, Ni coating can inhibit the corrosion of Ga and Cu. However, the as-volcano IMC structures were generated, also. The thermal resistance increased from 2.24 mm 2 ·K·W −1 to 14.47 mm 2 ·K·W −1 from initial time to 200 h. The interfacial corrosion behavior between TIM and Cu substrate is studied by first-principles molecular dynamics simulation. The diffusion coefficient in the z direction of Cu is 0.04 × 10 −5  cm 2 /s. In a word, the work could provide the guidelines for the further design of high-performance corrosion resistance in the region where Ga was used for thermal management on electronic products.

CAS / MDL: 7440-55-3
研究领域: 材料科学 · 热管理 · 电子器件
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Coatings · 2024 ·Vol. 14 ·期 2 ·164 · IF 2.9

Synergistic Defect Management for Boosting the Efficiency of Cu(In,Ga)Se2 Solar Cells

Wanlei Dai,Zhaoyi Jiang,Yali Sun,Juhua Wang,Zeran Gao,Haoyu Xu,Xinzhan Wang,Chao Gao,Qiang Ma,Yinglong Wang,Wei Yu

In this study, a feasible strategy is proposed for directly depositing high-quality Cu(In,Ga)Se2(CIGS) films using Na-doped targets in a selenium-free atmosphere to boost the power conversion efficiency (PCE) of CIGS solar cells. Introducing a small amount of sodium dopant effectively promoted the textured growth of CIGS crystals in the prepared films, resulting in larger grain sizes and a smoother interface. The higher MoSe2content at the CIGS/Mo interface increased the carrier lifetime in the films. In addition, sodium doping increased the proportion of Se atoms on the film surface and reduced the concentration of defects caused by the direct sputtering of the films in the selenium-free atmosphere. Therefore, the separation and transportation of photo-generated carriers in the devices were effectively enhanced. Using the optimized parameters, a record-high PCE of 17.26% was achieved for the 7.5% Na-doped devices, which represents an improvement of nearly 63%.Keywords:Cu(In,Ga)Se2;sodium-doped targets;magnetron sputtering;solar cells

CAS / MDL: 68-04-2 543-90-8
研究领域: 材料科学 · 能源技术
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Journal of Materials Chemistry A · 2022 ·Vol. 10 ·期 13 ·7300-7313 · IF 14.511

Fabricating Ga doped and MgO embedded nanomaterials for sorption-enhanced steam reforming of methanol

Zhao Sun,Junpeng Liu,Rongjun Zhang,Yu Wu,Hongwei Li,Sam Toan,Zhiqiang Sun

Sorption-enhanced steam reforming of methanol (SE-SRM) is a promising approach to creating a high-purity hydrogen supply. However, catalysts suffer from activity deactivation and low CO2 uptake capacity. In this study, we investigate the role of Ga doping of Cu–MgO in SE-SRM by synthesizing a series of MgO embedded xGaCuMg catalytic sorbents via a sol–gel method. The TEM-EDX mapping results indicate that MgO nanoparticles can be successfully embedded in the bulk-phase of the catalytic sorbent with a stabilized microstructure. The results from in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) reveal that the Ga-doped catalytic sorbent is conducive to promoting the conversion of C-containing intermediates in SE-SRM, and absorbing CO2 in the form of bidentate carbonate rather than monodentate carbonate. Experimental studies verify that the best uptake capacity of 18GaCuMg catalytic sorbent (36.25 mg CO2/g MgO) achieves almost complete conversion of methanol (99.70%) with 100% H2 selectivity at 200 °C. Specifically, no CO is formed during the kinetic-control stage of SE-SRM. Density functional theory (DFT) calculations based on the Cu(111)Ga2O3(202)MgO(200) model revealed that the Ga doping can enhance the adsorption energies of methanol and carbon dioxide, promoting methanol activation and increasing CO2 uptake capacity. These findings provide valid strategies for functionalized nanomaterial design, which will substantially promote the SE-SRMR performance with desired catalytic sorbent recyclability.

研究领域: 材料科学 · 催化化学 · 能源工程
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APPLIED CATALYSIS A-GENERAL · 2025 · IF 4.8

Ga-SrTiO3 modified by CuCrOx/Co3O4 dual cocatalyst for efficient photocatalytic overall water splitting

Yiquan Zhan,Shaohui Lai,Junzhe Jiang,Lijiao Zhong,Yongsheng Liu,Kai Yang,Jinbiao Liu,Shiyong Liu,Liqing Li,Yoshihisa Sakata

Strontium titanate (SrTiO 3 ) holds great potential for photocatalytic overall water splitting (OWS) to produce hydrogen. However, the current SrTiO 3 -based photocatalysts require expensive noble metals, such as Pt and Rh. There is an urgent need to explore cost-effective alternatives using non-noble metals. Herein, Cu, Cr, and Co were used as non-noble cocatalyst to modify the surface of Ga˗doped SrTiO 3 photocatalyst (Ga-STO (flux)). The characterization results of XPS and TEM revealed the CuCrO x cocatalysts generated reduced Cu 0 /Cu + species for hydrogen evolution reaction. The inclusion of Cr 2 O 3 aided in maintaining the stability of Cu 0 /Cu + species. The Co 3 O 4 cocatalysts were responsible for the oxygen evolution reaction. Under simulated sunlight, the optimal CuCrO x /Co 3 O 4 /Ga-STO (flux) sample provided the best hydrogen and oxygen production rates of 204.56 μmol·h⁻¹ and 102.28 μmol·h⁻¹ , respectively.

研究领域: 材料科学 · 能源化学
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COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS · 2025 · IF 5.4

Selective CO2 hydrogenation to formic acid over a novel Ga-Sn-Ce ternary catalyst

Yulan Xu,Minxian Wu,Xianxian Zhang,Wenchang Wang,Naotoshi Mitsuzaki,Zhidong Chen

Electrodeposition is a simple and rapid method for the preparation of thin-film materials, allowing catalytic materials to be directly deposited onto substrates, thereby eliminating the need for binders. Compared with bulk materials, two-dimensional thin films possess a higher specific surface area. The incorporation of Ga in Sn-based alloy materials can effectively expose active sites, thereby enhancing the catalytic performance for CO 2 electroreduction. Doping with rare-earth elements such as cerium can induce the formation of oxygen vacancies and defect sites, or modulate the electronic structure of the catalyst surface. These modifications enable independent regulation of the adsorption energy of various intermediates, effectively lowering reaction energy barriers and improving catalytic efficiency. In this work, Ga-Sn-Ce electrodes were synthesized via electrodeposition in a deep eutectic solvent composed of choline chloride and urea, and subsequently applied to CO 2 reduction. The GaSnCe0.6 electrode exhibited excellent selectivity toward formic acid at −0.99 V vs. the reversible hydrogen electrode, achieving a Faradaic efficiency of 92 %. Compared with previously reported Ga-Sn alloys, the introduction of Ce resulted in a positive shift of 250–270 mV in the optimal reduction potential for formic acid production from CO 2 .

研究领域: 催化化学 · 材料科学 · 电化学 · 环境科学 · 化学工程
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Physica Status Solidi-Rapid Research Letters · 2018 ·Vol. 12 ·期 5 ·1800034 · IF 3.721

Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

Anran Song,Kashif Javaid,Yu Liang,Weihua Wu,Jingjing Yu,Lingyan Liang,Hongliang Zhang,Linfeng Lan,Ting-Chang Chang,Hongtao Cao

Concerning the revolutionary future of electronic devices, high-performance solution-processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In-Ga-Cd-O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide thin films with small surface roughness have been grown by controlling the relative ratio of Cd-content. The present thin-film transistor with an optimized Cd-ratio exhibits a saturation field-effect mobility up to 10 cm 2 V −1 s −1 , an on/off current ratio of ≈1.3 × 10 9 , and a threshold voltage shift of ≈2.6 V under −5 V gate bias of 10 000 s, which are superior or comparable to those reported values of solution-processed conventional In-Ga-Zn-O counterparts. Our results indicate that the proposed In-Ga-Cd-O semiconductor would endow a promising transparent amorphous/nanocrystalline active material for electronic devices.

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Journal of Materials Chemistry C · 2024 · IF 5.7

Enhancing the photo-response performance of a SnSe-based photoelectrochemical photodetector via Ga doping

Zhiping Liang,Run Hao,Hualong Luo,Zhenming He,Liumei Su,Xing Fan

Layered SnSe in nanostructures has recently attracted growing interest in photonics, optoelectronics, photocatalysis, energy storage, and biomedicine because of its suitable band gap, excellent light absorption capacity, and considerable carrier mobility. However, the applications of SnSe in high-performance photoelectrochemical (PEC) devices are greatly hindered due to high-density defects, which lead to its high recombination of charge carriers and environmental instability. In this contribution, we have adopted a doping strategy to enhance the photo-response properties of a SnSe-based PEC photodetector. The as-prepared Ga-doped SnSe nanostructure shows a remarkable increase in photocurrent density, stable on–off cyclicity, fast photo-response behavior, and higher specific detectivity compared to the pristine SnSe. Based on structure characterization, composition analysis, and DFT calculations, the substitution of Sn by Ga in the lattice gives rise to changes in the electronic structure and optical absorption, endowing Ga-doped SnSe with a metal-like feature. Such a doping strategy can provide fundamental support in the development of SnSe-based devices and pave the way for PEC applications.

研究领域: 光子学 · 光电学 · 光催化 · 能量存储 · 生物医学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2016 · IF 3.014

Efficient hybrid solution strategy to fabricate Cu(In,Ga)(S,Se)2 solar cells

Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Shi Liu,Yulin Deng,Xiaogu Huang,Gang Wang

Hybrid solution process is a powerful liquid deposited strategy merging the advantage of molecular precursor solution and nanocrystals ink. A novel hybrid solution approach is presented to fabricate Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber layer using fully dissolved CIGS precursor solution and the CIGS nanocrystals. Such attractive strategy could significantly improve the single deposited thickness and enhance the quality of as-prepared CIGS film compared with the pure CIGS molecular precursor solution and the CIGS nanocrystals ink. Photovoltaic absorber layers based on CIGSSe chalcopyrite structure show the high-quality microstructural performance and are incorporated into solar cells with power conversion efficiency of 10.19%. The high performance of resulted optoelectronic devices represents a chance to extend the hybrid solution process to other inorganic semiconductor thin film solar cells.

研究领域: 材料科学 · 能源技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2015 · IF 2.999

Synthesis and luminescence properties of novel red phosphors LiRGe2O6:Mn4+ (R = Al or Ga)

Renping Cao,Wenjie Luo,Qingqiang Xiong,Aihui Liang,Shenhua Jiang,Yongchun Xu

LiRGe 2 O 6 :xMn 4+ (R = Al or Ga) (0 ≤ x ≤ 1.0 mol%) phosphors are synthesized by solid-state reaction method in air, and their crystal structures, luminescence properties, and fluorescence lifetimes are investigated. Their photoluminescence (PL) bands peaking at ∼ 670 nm owing to the 2 E →  4 A 2 transition of Mn 4+ ion cover the region from 620 to 750 nm (λex = 289 nm), and photoluminescence excitation (PLE) bands (λem ≈ 670 nm) are observed in the range of 200–550 nm. With excitation 289 nm, PL intensity of LiAlGe 2 O 6 :0.6%Mn 4+ phosphor is far stronger than that of LiGaGe 2 O 6 :0.6%Mn 4+ phosphor owing to the influence of crystal field. The optimal Mn 4+ ions concentration is ∼0.6 mol%. The fluorescence lifetime and quantum efficiency of LiAlGe 2 O 6 :0.6%Mn 4+ and LiGaGe 2 O 6 :0.6%Mn 4+ phosphors are ∼1.55 ms, 68.5 μs, 32%, and 15%, respectively. Luminous mechanism, the temperature quenching mechanism, and the influence of crystal field to luminous properties are analyzed and discussed, respectively. The experiment results are helpful to develop other novel Mn 4+ -doped phosphors.

CAS / MDL: 554-13-2
研究领域: 材料科学 · 光学
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