Materials Today Physics
·
2026
·
IF 9.7
Quancai Yue,Lijuan Ye,Lai Yuan,Guoping Qin,Di Pang,Yan Tang,Honglin Li,Hong Zhang,Wanjun Li
Self-powered bipolar photodetectors (PDs) have garnered significant attention for their potential in optoelectronic logic gates (OELGs) and secure optical communication systems, owing to their extremely low power consumption and cost-effectiveness. However, conventional unipolar PDs are constrained by functional rigidity and their reliance on passive decoding circuits. In this study, a self-powered bipolar photoelectrochemical detector (PEC-PD) is presented with a wavelength-dependent photoresponse in electrolytes, based on an amorphous gallium oxide/chromium oxide (a-Ga 2 O 3 /Cr 2 O 3 ) p–n heterojunction. This distinctive behavior arises from variations in the competitive dynamics between interfacial redox reactions and photogenerated carrier transport at the semiconductor/electrolyte interface under short-wave ultraviolet (UV-C) and long-wave ultraviolet (UV-A) irradiation. The device exhibits a positive photocurrent response time of 82.1/91.2 ms under 254 nm illumination and a negative photocurrent response time of 9.1/13.6 ms under 380 nm without an external power supply. Utilizing this tunable photoresponse, five fundamental Boolean logic operations—“OR”, “AND”, “NOR”, “NOT”, and “NAND”—are demonstrated by tailoring the illumination at specific wavelengths. Furthermore, the distinct bipolar photocurrent behaviors enable encrypted optical communication within a single photoelectrode architecture. This study advances the understanding of carrier dynamics manipulation and provides a solid foundation for the development of multi-functional OELGs and secure optical communication systems.
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JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2020
·Vol. 103
·期 9
·4999-5012
·
IF 3.502
Weichao Wang,Liyan Mao,Jinlin Liu,Shanhui Xu
Er 3+ -doped fiber lasers operating at 2.7 μm have attracted increasing interest because of their various important applications; however, the intrinsic self-terminating effect of Er 3+ and the reliability of glass hosts hindered the development of Er 3+ -doped fiber lasers. Herein, the glass-forming regions of a series TeO 2 –Ga 2 O 3 –R 2 O (or MO) (R = Li, Na, and Rb; M = Mg, Sr, Ba, Pb, and Zn) glasses are predicted by the thermodynamic calculation method. On this basis, the physical and optical properties of TeO 2 –Ga 2 O 3 –ZnO (TGZ) glass are investigated in detail as an example. Under the excitation of 980 nm laser diode, the fluorescence intensity at 2.7 μm reaches a maximum in the heavily Er 3+ -doped TGZ glass. By contrast, the accompanying near-infrared fluorescence at 1.5 μm and upconversion green emissions at 528 nm and 546 nm are all effectively weaken. Furthermore, the lifetime gap between the 4 I 11/2 upper laser level and 4 I 13/2 lower laser level is sharply narrowed from 2.81 ms to 0.59 ms, which is beneficial to overcome the population conversion bottleneck. All results demonstrate that these newly developed ternary tellurite glass systems are promising candidates for near-/mid-infrared laser glass fiber, fiber amplifiers, and fiber lasers.
研究领域:
光学材料
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光子学
·
激光物理
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玻璃科学技术
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CERAMICS INTERNATIONAL
·
2026
·
IF 6
Ying Peng,Xinyi Tang,Yuhuan Tan,Dequan Liu,Pengyan Fu,Jilin Zhang,Shixun Lian,Wenli Zhou
Heterovalent Ca 2+ -Si 4+ co-substitution tunes local coordination of Cr 3+ . • Double NIR luminescence without altering Cr 3+ average crystal field. • Optimized phosphor achieves greatly improved absorption and quantum efficiency. • High-brightness pc-NIR-LED is fabricated for imaging and plant lighting. Cr 3+ -doped near-infrared (NIR) phosphors are highly desirable for NIR illumination, biological detection and auxiliary imaging. Herein, we propose a heterovalent Ca 2+ -Si 4+ co-substitution strategy to replace Ga 3+ sites in β -Ga 2 O 3 :Cr 3+ . This approach precisely tailors the local coordination and defect structures surrounding Cr 3+ , leading to remarkable enhancement in NIR luminescence. Characterizations demonstrate that Ca 2+ -Si 4+ co-substitution barely changes the average crystal field of Cr 3+ , but introduces local lattice distortion and reduces coordination symmetry. Such local structure engineering relaxes the d-d transition selection rules of Cr 3+ , thereby enhancing the absorption of the 4 A 2g → 4 T 1g and 4 T 2g transitions and strengthen the broadband NIR emission from the 4 T 2g → 4 A 2g transition. For the optimal Ga 1.81 Ca 0.08 Si 0.08 O 3 :0.03Cr 3+ phosphor, the NIR emission intensity is approximately two times higher relative to pristine β -Ga 2 O 3 :Cr 3+ . Its internal quantum efficiency increases from 81.8% to 88.6%, and absorption efficiency rises from 10.9% to 30.6%. A comparative study on various M A 2+ –M B 4+ ion pairs (M A = Mg, Ca, Sr, Ba; M B = Si, Ge, Sn) verifies that Ca 2+ -Si 4+ yields the strongest luminescence enhancement for β -Ga 2 O 3 :Cr 3+ . Moreover, this universal strategy also improves blue light absorption and NIR emission of MgGa 2 O 4 :Cr 3+ and LiGa 5 O 8 :Cr 3+ . The assembled phosphor-converted NIR light-emitting diode achieves a NIR output power of 107.9 mW at 400 mA and a photoelectric conversion efficiency of 14.8% at 40 mA. The as-prepared phosphors possess promising practical values for NIR imaging and plant lighting. Download: Download high-res image (288KB) Download: Download full-size image
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JOURNAL OF ALLOYS AND COMPOUNDS
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2026
·
IF 6.7
Ao Ye,Yaru Wang,Luwei Feng,Xiaozhan Yang,Wenlin Feng
To address the low carrier separation efficiency and insufficient response of pristine β-Ga 2 O 3 -based solar-blind ultraviolet photodetectors, a low-cost, non-vacuum heterostructure strategy was proposed. β-Ga 2 O 3 thin films were prepared by mist chemical vapor deposition, and ZnO layers were deposited via successive ionic layer adsorption and reaction to construct an Au/β-Ga 2 O 3 /ZnO/Au heterojunction photodetector. Material characterization verified a clean heterointerface without impurity phases, and the built-in electric field significantly promoted carrier separation. Under 254 nm illumination at 40 V bias, the device delivers a photocurrent of 3.94 μA, 20 times higher than the pristine β-Ga 2 O 3 detector. The responsivity reaches 10.98 A/W, detectivity is 3.69×10 12 Jones, and external quantum efficiency is up to 5.36×10 3 %, enhanced by 20, 19, and 23 times respectively, with markedly improved rise speed and stable switching response. Moreover, the device shows a good linear relationship (R 2 =0.98115) between photocurrent response and bovine serum albumin concentration, enabling highly sensitive protein detection. This work provides a low-cost route for high-performance β-Ga 2 O 3 solar-blind photodetectors and extends their application to rapid, non-destructive UV biosensing.
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Reaction Chemistry & Engineering
·
2026
·
IF 2.9
Minghui Lian,Jinxiao Li,Lin Li,Shicheng Dong,Chao Zhang,Chunhua Yang,Jing Zhang,Hexiang Zhong,Wenyao Jin,Liwei Pan
In this study, the constitutive relationships of CuO/ZnO, CuO/Ga2O3, ZnO/Ga2O3 bimetallic catalysts and CuO/ZnO/Ga2O3 ternary catalysts were systematically investigated to reveal the mechanism of the metal–component interactions on the catalytic performance. In the bimetallic system, ZnO inhibits CuO sintering through a physical barrier effect, the CuO/Ga2O3 interface promotes the formation of adsorbed oxygen to enhance the resistance to carbon deposition, and the ZnO/Ga2O3 solid-solution structure significantly enhances the electron-transfer efficiency. In the ternary catalyst with an M2+ : M3+ ratio of 3 : 1, the high specific surface of the layered structure with abundant active sites enabled CuO/ZnO/Ga2O3-3 to exhibit optimal performance: the synergistic effect between the CuO and Zn9Ga2O12 crystalline surfaces enhanced electron transfer and metal–carrier interactions, and the ratio of adsorbed oxygen reached 78.42%, which effectively promoted CO oxidation and CO2 generation. When applied to methanol steam reforming (MSR), the catalyst achieved 99.89% methanol conversion, 55.30 mmol g−1 h−1 H2 production rate, and only 0.91% CO concentration, combining highly efficient catalytic activity and anti-sintering stability. The results provide a theoretical basis for the structural design and performance optimization of multi-component catalysts.
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APPLIED THERMAL ENGINEERING
·
2022
·
IF 6.465
Jiashu Zheng,Xiaoxiang Li,Wenkui Xing,Benwei Fu,Chengyi Song,Wen Shang,Peng Tao,Tao Deng
With the increasing power density and continuously added functionalities, normal operation of portable electronic devices such as USB flash disks and smart phones calls for facile and efficient thermal management. Ga-based liquid metals have attracted intensive research attention for thermal management applications because of their high thermal conductivity and low toxicity, but as a type of phase change materials they still suffer from large supercooling and leakage issues. Herein, this work reports direct incorporation of high-loading miscible Ga 2 O 3 particles within Ga liquid metals to prepare non-leakage phase change composites for transient heat absorption. By loading 16.7 wt% of Ga 2 O 3 particles, paste-like liquid metal composites with a high thermal conductivity (∼21 W/m·K), a low interfacial thermal resistance (∼3.5 mm 2 ·K·W −1 ), a small supercooling degree (∼8.8 °C) and a large volumetric latent heat (∼308 J/cm 3 ) were obtained. These advantageous features enable application of the prepared liquid metal phase change composites for high-performance temporary heat absorption of intermittent-use electronic devices such as USB flash disks. Moreover, the attached phase change composites can be easily peeled off from electronic devices, and Ga liquid metals and Ga 2 O 3 particles can be readily recycled by immersing the composites within acidic or basic solutions. The facile direct hand-mixing fabrication process, broadly tailorable supercooling degree and form-stability properties, reusability and recyclability would make the prepared liquid metal composites suitable for phase change-based thermal management applications.
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JOURNAL OF LUMINESCENCE
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2023
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IF 3.6
Liwei Zeng,Jiyou Zhong,Wenbin Lin,Weiren Zhao
NIR phosphor-converted light-emitting diode (NIR pc-LED) has attracted many attentions for its promising applications in biomedical imaging, night vision, spectroscopy, and many other fields, while the discovery of broadband NIR phosphors with high external quantum efficiency (EQE) remains a challenge. Herein, a series of efficient and tunable broadband NIR-emitting Ga 1.97-2 x Mg x Sn x O 3 :0.03Cr 3+ phosphors were synthesized via [Mg 2+ -Sn 4+ ] substituting [Ga 3+ -Ga 3+ ] in Ga 2 O 3 :Cr 3+ system. As increase of substituting ratio x , a significant red-shift in the emission spectra from 726 to 793 nm with a full width at half maximum (FWHM) extended from 121 to 167 nm can be observed. All the samples have an EQE above 40% under 450 nm excitation; and the excitation peak in the blue light region remains unchanged, enabling these materials to be efficiently excited by blue LEDs. Finally, a NIR pc-LED device was fabricated by integrating the optimized Ga 1.77 Mg 0·1 Sn 0·1 O 3 :0.03Cr 3+ phosphor on a blue LED chip, which exhibits a high NIR output power of 33.41 mW with a photoelectric conversion efficiency of 12.01% under a drive current of 100 mA. These results indicate that the obtained NIR phosphors may have potential in NIR pc-LEDs applications.
研究领域:
材料科学
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光学材料
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固态照明
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光子学
·
发光材料
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高影响因子
ACS Catalysis
·
2026
·
IF 13.6
Kaixuan Chen,Xintian Luo,Hansheng Wang,Shangzhi Xie,Huibing He,Jing Xu
Low ethylene glycol (EG) selectivity and insufficient stability in the complex multistep hydrogenation of dimethyl oxalate (DMO) have invariably stimulated a research focus of copper-based catalysts. Conventional catalyst development heavily relies on extensive trial-and-error experimentation and serendipitous discovery. In order to efficiently predict high-performance catalysts, this study constructs a machine learning (ML) model based on the K-means clustering algorithm to successfully screen out the potential Ga promoter. Experimental results demonstrate that a 0.5Ga-Cu/SiO2 catalyst achieves nearly 100% DMO conversion and 98.59% EG selectivity at a relatively low temperature (180 °C) and high weight hourly space velocity (1.5 h−1), while maintaining continuous operational stability for over 240 h. Physical characterizations reveal that Ga2O3 promotes the dispersion of copper species and reduces local electron density, thereby modulating the balance between Cu0 and Cu+ dual active sites. Moreover, density functional theory calculations indicate that the interfacial interaction between Ga2O3 and copper species enhances the substrate dissociation adsorption. This study validates the utility of ML in screening advanced copper-based catalysts for efficient DMO hydrogenation to EG and provides a valuable framework for the future catalyst design in the thermocatalytic field.
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Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 44
·15918-15926
·
IF 7.393
Zhigang Gao,Luyue Niu,Feifei Zhang,Sikai Wang,Jing Xiao,Jun Chen,Lian Zhang,Jing Ren,Katsuhisa Tanaka
Manipulating the plasmonic properties of metal nanocrystals (NCs) is key to many modern nanophotonic technologies. Here, the strategy of combining Ag+ ↔ Li+ ion exchange and controlled thermal crystallization is proposed as an effective means to prepare transparent nano-glass composites (nano-GCs) embedded with hybrid Ag–metal and γ-Ga2O3:Ni2+ NCs. Only by this method can a large amount of Ag–metal NCs (1.1 mol%) be implanted and well dispersed in the glass matrix without sacrificing their optical transmission properties. The broadband near-infrared (NIR) emission of Ni2+ is enhanced by 100% in the presence of Ag–metal NCs, which is otherwise impossible by raising the Ni2+ concentration due to the limited solubility and intrinsically weak absorption of Ni2+ in nano-GCs. The mechanisms responsible for the enhanced NIR emissions of Ni2+ are comprehensively discussed in the context of both experimental investigations and theoretical simulations. The present study not only provides a promising robust nano-GC-based gain medium for integrated optics but also offers some insights into the plasmonic metal-enhanced photoluminescence for enriched optical functions.
研究领域:
光学
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材料科学
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纳米技术
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ELECTROCHIMICA ACTA
·
2022
·
IF 7.336
Yuting Zhong,Yalan Hu,Han Mo,Zhirui Wu,Xin Fu,Liqun Zhou,Hongying Liu,Ling Li,Xiaoguang Liu
A wrinkled rGO modified nanorod gallium oxides (Ga 2 O 3 ) anchored PdPb nanoalloys composite (PdPb@rGO/Ga 2 O 3 ) was prepared using GO/Ga-MOF as the precursor by facile hydrothermal, calcination and reduction approach, and then applied as an electrocatalyst for alcohols electrooxidation. Electrochemical tests show that the fabricated PdPb@rGO/Ga 2 O 3 exhibits superior electrocatalytic activity and high anti-CO poisoning capability for methanol, ethanol and ethylene glycol oxidation reactions (MOR, EOR and EGOR), outperforming Pd@rGO/Ga 2 O 3 and commercial Pd/C. Specifically, the bimetallic electrocatalyst owns the highest forward peak current density of 115.84 mA cm −2 , 146.97 mA cm −2 and 226.59 mA cm −2 , which is 4.69, 5.08 and 8.38 times of Pd/C for MOR, EOR and EGOR, respectively. After 3600 s CA test, the retained current density of PdPb@rGO/Ga 2 O 3 achieves the initial 59.24%, 71.13% and 81.71% towards MOR, EOR and EGOR, respectively. The remarkable performance is attributed to the electronic effects of PdPb nanoalloys, which can improve the electronic structure of Pd d-band, while the surface decoration of Pb/PbO NPs can dramatically adsorb more oxy-species and accelerate the oxidative removal of CO (ads) . Moreover, the oxidation mechanisms of three alcohols and the removal processes of CO (ads) on the Pd surface are analyzed in detail.
研究领域:
材料科学
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电化学
·
纳米技术
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产品关联
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高影响因子
Journal of Physical Chemistry Letters
·
2019
·
IF 7.329
Hebin Wang,Hongyu Chen,Li Li,Yuefei Wang,Longxing Su,Wanpeng Bian,Bingsheng Li,Xiaosheng Fang
A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p–n junction. Owing to the high crystallized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cutoff wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm/R280 nm) of 103, which is two orders of magnitude larger than the average value reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow bandpass response of only 17 nm in width. This work might be of great value in developing a high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
研究领域:
光电子学
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半导体器件
·
紫外探测
·
材料科学
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光电探测器
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高影响因子
JOURNAL OF CRYSTAL GROWTH
·
2025
·
IF 2
Biao Meng,Changshuai Yin,Taiqiao Liu,Yao Lu,Yujie Yan,Yang Cao,Hao Fu,Gai Wu,Kang Liang,Sheng Liu,Zhaofu Zhang
Co-designed optimization and analysis of thermal field structure and defect formation for high quality β -Ga 2 O 3 single crystal with ultra-wide bandgap has been systematically investigated via edge-defined film-fed growth technique and numerical simulation. To confirm the wafer-scale quality, a collaborative verification scheme is developed at both microscopic and macroscopic scales. The narrow full width at half-maximum (139.82 arcsec) and low average defect density (5.5 × 10 4 cm −2 ) highlight the high quality of the bulk crystal. The overall low defect density in the crystal is confirmed through rotated electron spin resonance owing to the appearance of angle-independent single peak. The dopant of Zr is verified as the main impurity and the role of Zr, an effective n-type dopant, is investigated by first principles calculation. Moreover, the microscopic mechanism of defect formation is interpreted as atomic arrangement disorder and lattice distortion. This study presents novel proposals and strategies for the advanced improvement and optimization of β -Ga 2 O 3 single crystal growth and defect characterization.
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