Acta Metallurgica Sinica-English Letters
·
2016
·Vol. 30
·期 2
·113-119
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IF 1.188
Yang Yan-Fang,Chen Jing-Jing,Mao Zhi-Yong,Li Guang-Hao,Xu Jiao,Wang Da-Jian,Fahlman Bradley D.
Yellow-emitting BCNO phosphors, applied for white light-emitting-diodes (LEDs), were synthesized by a facile microwave heating route at lower temperature within short duration. The prepared BCNO phosphors exhibited amorphous form and tunable yellow emission in the range of 510–550 nm under the excitation of 450-nm blue light. The effects of carbon content on the photoluminescence properties for these BCNO phosphors and their application performances in white LEDs were investigated in detail. The demonstrated microwave synthesis route is promising in preparing low-cost phosphors, and the prepared BCNO phosphor may find potential application in blue-based white LEDs.
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高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2019
·Vol. 54
·期 9
·6917-6929
·
IF 3.442
Zhihai Wu,Jiao Wei,Yanni Sun,Jun Wu,Yafei Hou,Pan Wang,Nengping Wang,Zhenfu Zhao
Recently, all-inorganic perovskite quantum dots (QDs) (CsPbX 3 , X = Cl, Br, I) as the emerging semiconductor materials have been intensively studied owing to superior optical properties. Currently, the strategy for preparation of inorganic perovskite QDs mainly focuses on the hot-injection method, but requires inert gas protection and is difficult to mass-produce. In this work, we developed a simple and low-cost strategy for preparing highly luminescent and air-stable all-inorganic perovskite QDs by directly heating perovskite precursors in octane in air. The emission wavelength of CsPbX 3 perovskite QDs can be tunable from ultraviolet (UV) to infrared region by simply controlling their halide composition and display high PLQYs. Moreover, CsPbX 3 perovskite QDs in octane can exist more than half a year in air and the film of CsPbX 3 perovskite QDs also shows good thermal stability and air stability, especially high iodide-substituted CsPbBr 3− x I x perovskite QDs. The CsPbX 3 perovskite QDs can be easily blended with PDMS and used as color conversion layer on the blue LEDs chip for high-quality white LEDs. Our work opens a window for the potential application of such highly luminescent material in the fields of multicolor LEDs, backlight display and other related optoelectronic devices.
研究领域:
材料科学
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纳米技术
·
光电子学
·
发光二极管（LED）
·
量子点
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DOI
高影响因子
INORGANIC CHEMISTRY
·
2023
·
IF 4.6
Huimin Li,Ran Pang,Lihong Jiang,Da Li,Su Zhang,Hongjie Zhang
Current ultraviolet (UV) light sources are dominated by blacklights that contain mercury vapor. Improper disposal or accidental breakage of these lamps can lead to serious pollution. Phosphor-converted light-emitting diodes (pc-UV-LEDs) have the potential to replace these mercury-containing lamps, making them more environmentally friendly. To improve the adjustability of the UV emission and reduce production cost, a series of UV-emitting phosphors were developed by introducing Bi3+ in BaSc2Ge3O10 (BSGO) which has a broad bandgap of 5.88 eV. The phosphor exhibits a negative thermal quenching effect that results from thermally activated defects. Despite this, the emission intensity of the phosphor sustains up to 107% at 353 K and 93% at 473 K compared to the intensity at 298 K. The internal quantum efficiency and the external quantum efficiency reach 81.0 and 49.32%, respectively, under 305 nm excitation. A pc-UV-LEDs were fabricated by combining the phosphor with a chip. The resulting device emits a broad band ranging from 295 nm to 450 nm, covering part of the UVB (280 nm ∼ 315 nm) and UVA (315–400 nm) regions. Our work has the potential to promote the replacement of current blacklights, including high-pressure mercury lamps and fluorescent low-pressure mercury lamps, by pc-UV-LEDs in applications such as bug zappers and tanning beds. Moreover, the phosphor exhibits desirable long persistent luminescence, which extends its prospect of applications.
研究领域:
材料科学
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光子学
·
固态照明
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发光材料
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光电子学
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高影响因子
Small
·
2025
·
IF 12.1
Xihan Luo,Yuhui Dong,Weichao Qi,Hong Zhu,Yuyao Feng,Danni Yan,Yousheng Zou,Haibo Zeng
Non-toxic Ag-In-Ga-S (AIGS) quantum dots (QDs) backlight film has garnered significant attention in white-LEDs (WLEDs) as down-conversion luminescent materials. However, current research on AIGS-based backlight films still faces challenges like low photoluminescence quantum yield (PLQY), polymer incompatibility, etc. This study demonstrates an innovative in situ aqueous-phase synthesis method for producing a high PLQY red-emission AIGS@PVA backlight film. The red-emission AIGS QDs are grown in situ in a PVA matrix, while the surface defects are simultaneously passivated by PVA. Red-emission AIGS@PVA films with a PLQY of 82% are successfully fabricated, exhibiting excellent uniformity, surface flatness, and flexibility. Furthermore, a WLED is successfully fabricated by stacking the red-emission AIGS@PVA film on a green-emission film through the excitation of a blue chip. The WLED achieved a relatively standard white light with CIE chromaticity coordinates of (0.32, 0.32), color temperature of 6403 K, and color rendering index (CRI) of 94. The realization of high PLQY in situ aqueous-phase film will push the practical application of backlight film.
研究领域:
材料科学
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纳米技术
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光电子学
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固态照明
·
量子点
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产品关联
DOI
PubMed
高影响因子
Light-Science & Applications
·
2019
·Vol. 8
·期 1
·1-9
·
IF 14
Zhao Ming,Liao Hongxu,Molokeev Maxim S.,Zhou Yayun,Zhang Qinyuan,Liu Quanlin,Xia Zhiguo
Phosphor-converted white LEDs rely on combining a blue-emitting InGaN chip with yellow and red-emitting luminescent materials. The discovery of cyan-emitting (470–500 nm) phosphors is a challenge to compensate for the spectral gap and produce full-spectrum white light. Na 0.5 K 0.5 Li 3 SiO 4 :Eu 2+ (NKLSO:Eu 2+ ) phosphor was developed with impressive properties, providing cyan emission at 486 nm with a narrow full width at half maximum (FWHM) of only 20.7 nm, and good thermal stability with an integrated emission loss of only 7% at 150 °C. The ultra-narrow-band cyan emission results from the high-symmetry cation sites, leading to almost ideal cubic coordination for UCr 4 C 4 -type compounds. NKLSO:Eu 2+ phosphor allows the valley between the blue and yellow emission peaks in the white LED device to be filled, and the color-rendering index can be enhanced from 86 to 95.2, suggesting great applications in full-spectrum white LEDs.
研究领域:
材料科学
·
光学工程
·
固态照明技术
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2021
·
IF 3.599
Zuizhi Lu,Yingbin Meng,Hua Fan,Jiangying Lu,Xiaoying Zhong,Yingjun Ou,Hairong Mo,Liya Zhou
Mn 4+ -doped double-perovskite LaTiSbO 6 (LTS) phosphors were fabricated via traditional high-temperature sintering reaction. The crystal structure, composition , and luminescent properties of the LTS:Mn 4+ phosphors were studied. The PLE spectrum presents two broad bands that are centered at 356 and 475 nm, and they match the UV and blue chips. A broad emission band that is centered at 685 nm is presented in the PL spectrum. The quantum efficiency is 21.3%. A red light LED device was also fabricated with LTS:0.007Mn 4+ phosphor and an InGaN chip (465 nm). The CCT, CRI, and luminous efficiency of the LED are 4215 K, 73.4, and 62.1 Im/W, respectively. The LED spectrum meets the needs of plant growth in blue and red light. Therefore, the LED fabricated by LTS:Mn 4+ phosphor is a potential light source for plant growth.
研究领域:
材料科学
·
植物学
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2023
·
IF 3.6
Jiawen Li,Jiawen Wang,Feifei Huang,Youjie Hua,Shiqing Xu,Ruoshan Lei
In pursuit of healthy lighting, the exploitation of high-quality Eu 2+ -activated phosphors available for near-ultraviolet light-emitting diode (NUV-LED) chip-based white LED (WLED) has fetched growing interest. Herein, a novel NUV-light excitable Rb 3 GdSi 2 O 7 : Eu 2+ phosphor is successfully synthesized via a high-temperature solid-state reaction method. The crystal structure of Rb 3 GdSi 2 O 7 is found to be hexagonal, belonging to space group P6 3 /mmc. The Rb 3 GdSi 2 O 7 : Eu 2+ phosphor exhibits a broad excitation band in the 300–450 nm wavelength range, and it emits strong yellow-green light with peak at 543 nm upon 365 nm excitation. Benefitting from the high structure rigidity of host matrix, Rb 3 GdSi 2 O 7 : Eu 2+ also possesses a desired luminescence thermal stability (423 K, 85.6%). The WLED device fabricated using a 365 nm chip and a blend of the as-prepared Rb 3 GdSi 2 O 7 : Eu 2+ yellow-green phosphor and commercial BaMgAl 10 O 17 : Eu 2+ blue phosphor displays an excellent color-rendering index of 95.9 at a low correlated color temperature of 4373 K. This work confirms the applicative potential of Rb 3 GdSi 2 O 7 : Eu 2+ in NUV-converted warm WLEDs, which may promote the development of high-color-quality healthy lighting.
研究领域:
材料科学
·
光学工程
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DOI
高影响因子
Materials Today Physics
·
2021
·
IF 9.298
Chengyuan Tang,Xinyu Shen,Siyao Yu,Yuan Zhong,Zhenyu Wang,Junhua Hu,Min Lu,Zhennan Wu,Yu Zhang,William W. Yu,Xue Bai
Inorganic CsPbX 3 (X = Cl, Br, I) perovskite nanocrystals (PNCs) have a great promise for LED applications due to their high brightness and tunable emission. However, the long chain capping ligands such as oleylamine and oleic acid function are electrically insulating layers to hinder the charge carrier injection and transport, limiting the device performances. To overcome the limitations, p -iodo-D-phenylalanine (PIDP) was used in the post-treatment process of PNCs to partially substitute the long insulating ligands to improve the conductivity of CsPbI 3 PNC films. Besides, the surface defects were also passivated by PIDP, increasing the radiative decay rate and decreasing the non-radiative decay rate, thus enhanced the photoluminescence quantum yield of the PNCs. As a result, highly efficient PNC LEDs were obtained with an external quantum efficiency of 12.4% and a peak luminance of 2000 cd m −2 .
研究领域:
材料科学
·
光电化学
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2020
·
IF 3.28
Xiaoyong Huang,Qi Sun,Balaji Devakumar
Deep-red-emitting phosphors are important for fabricating light-emitting diodes (LEDs) toward applications in plant growth lighting. Herein, we reported on novel efficient deep-red-emitting Mn 4+ -activated Ca 2 LuTaO 6 (CLT) double-perovskite phosphors. A series of CLT: x Mn 4+ ( x = 0.1, 0.2, 0.4, 0.6, 0.8, and 1.0 mol%) samples were prepared by the conventional high-temperature solid-state reaction technique, and they were characterized by using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), elemental mapping, photoluminescence excitation and emission, decay curves, CIE chromaticity coordinates, internal quantum efficiency (IQE), and temperature-dependent emission spectra . The CLT host crystallized in a monoclinic structure with space group of P2 1 /n, and it contained an octahedral site of TaO 6 for Mn 4+ doping. Impressively, under 351 ultraviolet light excitation these CLT: x Mn 4+ phosphors exhibited bright deep-red emissions around 682 nm with CIE chromaticity coordinates of (0.7272, 0.2728) and full width at half maximum (FWHM) of 25 nm. Notably, the optimal CLT:0.2%Mn 4+ sample possessed an IQE of 37% and good resistance to thermal quenching (I 423 K /I 303K = 47%). Considering the emission spectrum of CLT:0.2%Mn 4+ deep-red-emitting phosphors matched well with the absorption spectrum of phytochrome P FR , the as-prepared CLT:0.2%Mn 4+ phosphors showed great potential in plant growth LEDs.
研究领域:
材料科学
·
植物学
·
光学工程
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产品关联
DOI
高影响因子
Materials Today Chemistry
·
2022
·
IF 7.613
B. Han,X. Yang,J. Ren,L. Liu,E. Zhao,X. Zhu,J. Zhu,H. Ma,A. Li,P. Teng
Indoor artificial cultivation of plants is a novel technology applied to agriculture, and the emission band of luminescent materials can be matched with the needs of plants to promote plant growth. In this contribution, novel Mn 4+ doped Sr 2 GdTaO 6 (SGTO) deep-red phosphor was synthesized. This material was characterized, in detail, by X-ray diffractometer, SEM, and photoluminescence emission spectra. Sr 2 GdTaO 6 :Mn 4+ (SGTO:Mn 4+ ) can be effectively excited by near-ultraviolet (NUV) light, and the broadband emission of deep-red light matches the absorption band of plant phytochromes P R and P FR . The optimum doping concentration of Mn 4+ in SGTO was 0.6 mol%, and the concentration quenching mechanism was attributed to dipole-quadrupole ( d - q ) electric interaction. The photoluminescence emission intensity of SGTO:0.006Mn 4+ at 423 K is 80.6% of that at room temperature and the internal quantum efficiency of SGTO:0.006Mn 4+ is 36.09%. Finally, the performance of the commercial 440 nm light-emitting diode chip/SGTO:0.006Mn 4+ encapsulated light-emitting diode device was stable and can meet the needs of plants for the blue and red light. The results showed that SGTO:0.006Mn 4+ deep-red phosphor is expected to be a phosphor suitable for indoor plant growth lighting.
研究领域:
农业科学
·
材料科学
·
光学工程
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产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2022
·
IF 6.14
Yicheng Zeng,Weiwei Chen,Yuan Deng,Wanying Gu,Chenxi Wu,Yating Guo,Pan Huang,Fangze Liu,Hongbo Li
Formamidinium lead bromide (FAPbBr3) nanocrystals (NCs) have been demonstrated to exhibit ideal ultrapure green luminescence at 530 nm and to hold great potential in light-emitting diodes, by potentially overcoming the difficulties facing cesium lead bromide (CsPbBr3) NCs. However, compared to all-inorganic lead halide perovskite NCs, organic–inorganic hybrid FAPbBr3 NCs are sensitive to moisture, oxygen, and heat due to their intrinsic instability caused by the organic cations (FA+). Herein, we present an epitaxial growth method for the overgrowth of a large-band-gap cesium lead halide (Cs4PbBr6) shell on the surface of FAPbBr3 NCs. The resulting core/shell NCs show a near-unity photoluminescence quantum yield (PLQY) of 97.1%, the emission with full width at half-maxima of 88 meV, and long-term environmental stability. The introduction of Cs+ into FAPbBr3 NCs can inhibit the migration of FA+ and suppress the phase transformation from cubic phase to tetragonal phase at 60 °C. Furthermore, the existence of shell can provide stronger exciton confinement and improve the thermal stability of FAPbBr3 NCs. The core/shell perovskite NCs developed in this study have the advantages of high PLQY and good stability and may contribute to the field of light-emitting diodes (LEDs).
研究领域:
材料科学
·
光学工程
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产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2021
·
IF 3.599
Xuemei Yao,Yifan Zhong,Junzhi Che,Jun Chen,Fanhua Zeng,Bin Deng,Ruijin Yu
Red phosphor based on Sm 3+ has a high potential application in displays and lighting. In this work, novel reddish-orange emitting phosphors were obtained by introduced Sm 3+ into the double-perovskite structure Sr 3 TeO 6 host lattice by solid-state reaction method. The phase composition and optical properties were discussed in detail. Through the X-ray diffraction (XRD) and Rietveld refinement analysis, the prepared Sr 3 TeO 6 :Sm 3+ phosphors presented the triclinic symmetry with the and space group Fm3m . The photoluminescent spectra reveal that The Sr 3 TeO 6 :Sm 3+ phosphors emit intense reddish-orange emission light at 652 nm ascribed to the 4 G 5/2 - 6 H 9/2 transition. Furthermore, the correlated color temperature (CCT) and color purity of Sr 3 TeO 6 : x Sm 3+ (0.01 ≤ x ≤ 0.30) are calculated using emission spectra . The optimum doped concentration is 2 mol%. The luminescence intensity remained at 87% at 480 K of its original value at 300 k. The red light-emitting diode (LED) is successfully fabricated based on Sr 3 TeO 6 :0.02Sm 3+ samples. The CIE coordinates of the fabricated white LED nearly overlaps with an equal energy point (0.333, 0.333) in the CIE 1931 color system. All results indicate that the Sr 3 TeO 6 :Sm 3+ phosphors can be applied in the white light-emitting diodes (W-LEDs) field.
研究领域:
材料科学
·
光学工程
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产品关联
DOI
高影响因子
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