Coatings
·
2024
·Vol. 14
·期 2
·164
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IF 2.9
Wanlei Dai,Zhaoyi Jiang,Yali Sun,Juhua Wang,Zeran Gao,Haoyu Xu,Xinzhan Wang,Chao Gao,Qiang Ma,Yinglong Wang,Wei Yu
In this study, a feasible strategy is proposed for directly depositing high-quality Cu(In,Ga)Se2(CIGS) films using Na-doped targets in a selenium-free atmosphere to boost the power conversion efficiency (PCE) of CIGS solar cells. Introducing a small amount of sodium dopant effectively promoted the textured growth of CIGS crystals in the prepared films, resulting in larger grain sizes and a smoother interface. The higher MoSe2content at the CIGS/Mo interface increased the carrier lifetime in the films. In addition, sodium doping increased the proportion of Se atoms on the film surface and reduced the concentration of defects caused by the direct sputtering of the films in the selenium-free atmosphere. Therefore, the separation and transportation of photo-generated carriers in the devices were effectively enhanced. Using the optimized parameters, a record-high PCE of 17.26% was achieved for the 7.5% Na-doped devices, which represents an improvement of nearly 63%.Keywords:Cu(In,Ga)Se2;sodium-doped targets;magnetron sputtering;solar cells
研究领域:
材料科学
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能源技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Zhanying Yu,Xiyu Wang,Xinlong He,Runjing Li,Aimin Zhang,Jihai Zhang
Zinc is an ideal energy storage material because of its low toxicity, nonflammability, and good biocompatibility. However, the commercial application is seriously hindered due to problems such as dendrite growth, hydrogen evolution, and interface passivation caused by “dead zinc” in the process of cyclic deposition. Herein, a nanoscale deposition dispersion model is designed in order to achieve directional deposition and uniform distribution of zinc ions for the growth of interfacial dendrites. Liquid metal GaIn was combined with Mxene for this nanostructure, which provides a rapid ion transfer channel to achieve lower overpotentials, a more uniform electric field distribution, and stronger corrosion resistance in a core–shell structure to achieve interface reaction suppression. The material was coated on the surface of the zinc metal as an artificial protective layer. It has a better cycle life at 1 mA·cm–2 compared with the bare Zn metal anode, achieving a long cycle time of 1100 h and an ultralow voltage lag (28.1 mV). It maintains the stability for 1000 cycles at 1 mA·cm–2 after assembling the complete battery. This provides a way to improve the performance of zinc-ion secondary batteries and paves the way for the next generation of energy storage devices.
研究领域:
材料科学
·
能源存储技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Qihua Liang,Guotao Lin,Junting Gao,Zequan Li,Qingge Feng
Formaldehyde is a ubiquitous indoor pollutant. Developing metal oxide semiconductors gas sensors for selective ppb-level formaldehyde detection is challenging. Therefore, developing gas sensors that can selectively detect indoor formaldehyde at ppb levels is important. In this study, outer-walled thin sheet-like microspheres of Ga-doped In 2 O 3 (Ga x In 2-x O 3 , x = 0, 0.1, 0.2, 0.3, and 0.4) were fabricated using a facile two-step synthetic method. The Ga 0.3 In 1.7 O 3 based sensor shows the response (556 ± 25) to 100 ppm formaldehyde at 80 °C, which is around 6.5 times that of the pure In 2 O 3 based sensor at 90 °C. Furthermore, it has fast response time (< 3 s), excellent selectivity (S Formaldehyde /S Ethanol = 160, S Formaldehyde /S Acetone = 267), good stability (at least 60 days), and ultra-low limit of detection (10 ppb) for formaldehyde at 80 °C. The improved formaldehyde sensing performance of Ga 0.3 In 1.7 O 3 microspheres is attributed to the optimization of surface chemisorbed oxygen, which is caused by Ga doping regulating the Fermi level of In 2 O 3 as well as an increase in the specific surface area.
研究领域:
材料科学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale Research Letters
·
2018
·Vol. 13
·期 1
·1-10
·
IF 3.125
Lan Lifang,Li Sheng,Li Jun,Lu Lu,Lu Yan,Huang Si,Xu Shuaijun,Pan Chunyang,Zhao Fenghua
A sol-gel method was adopted to obtain LiNi 0.5-x Ga x Mn 1.5 O 4 ( x = 0, 0.04, 0.06, 0.08, 0.1) samples. The effect of Ga doping on LiNi 0.5 Mn 1.5 O 4 and its optimum content were investigated, and the electrochemical properties at room temperature and at a high temperature were discussed. The structural, morphological, and vibrational features of LiNi 0.5-x Ga x Mn 1.5 O 4 ( x = 0, 0.04, 0.06, 0.08, 0.1) compounds were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR). The XRD results demonstrate that all samples have a disordered spinel structure with a space group of Fd3m, and Ga doping restrains the formation of the Li x Ni 1-x O secondary phase. FT-IR analysis reveals that Ga doping increases the degree of cation disorder. The SEM results reveal that all samples possess a fine spinel octahedron crystal. The electrochemical performance of the samples was investigated by galvanostatic charge/discharge tests, dQ/dV plots, and electrochemical impedance spectroscopy (EIS). The LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample with the optimum content shows a superior rate performance and cycle stability after Ga doping, especially at a high discharge rate and high temperature. In addition, the LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample retained 98.3% of its initial capacity of 115.7 mAhg −1 at the 3 C discharge rate after 100 cycles, whereas the pristine sample delivered a discharge capacity of 87.3 mAhg −1 at 3 C with a capacity retention of 80% at the 100th cycle. Compared with the pristine material, the LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample showed a high capacity retention from 74 to 98.4% after 50 cycles at a 1 C discharge rate and 55 °C.
研究领域:
材料科学
·
电化学
✓ 已验证
DOI
高影响因子
JOURNAL OF APPLIED ELECTROCHEMISTRY
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2022
·Vol. 53
·期 4
·847-860
·
IF 2.925
Liu Zuowei,Guo Xueyi,Tian Qinghua,Xu Zhipeng
Abstract The gallium electrowinning process is always accompanied by hydrogen evolution reaction that results in low current efficiency (CE). In this manuscript, cyclic voltammetry and chronoamperometry studies were carried out to investigate the gallium cathode behavior under various conditions and explore the parameter that is beneficial to improve the CE. The CE of the lead and copper cathodes was higher, while gallium deposited on the titanium, SUS316, and SUS304 cathodes was readily separated. Increasing the overpotential and gallium concentration or decreasing the pH within a certain range was all beneficial to improve the CE, while the temperature had no significant effect on the CE. Kinetic studies of gallium electrodeposition were carried out. The gallium electrodeposition process was determined as mixed control and forced convection is expected to further improve the CE. The apparent activation energy and kinetic current from the electrochemical reactions were determined to be 23.335 kJ mol −1 and 47.6 mA, respectively. Graphical abstract
研究领域:
电化学
·
材料科学
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Huijuan Wu,Lili Chen,Suiting Ning,Xiaodie Zhao,Shuping Deng,Ning Qi,Feng Ren,Zhiquan Chen,Jing Tang
In this paper, Ga-doped In2O3 (IGO) was synthesized using a hydrothermal method combined with spark plasma sintering (SPS) treatment. Nanosized pore structures were successfully introduced into IGO. A high porosity of 67.2% is obtained in the In1.82Ga0.18O3 sample consolidated by SPS sintering at a relatively low temperature of 500 °C. With further increasing sintering temperature, the porosity decreases gradually and reaches 10.1% at 1000 °C. Positron annihilation measurements confirm the decrease of porosity in IGO with increasing sintering temperature and reveal that there are still considerable amounts of nanopores even after sintering at 1000 °C. The nanopores in IGO act as strong phonon scattering centers, which lead to an extremely low thermal conductivity of 0.21 W m–1 K–1 at room temperature for IGO sintered at 500 °C. This thermal conductivity is nearly 2 orders of magnitude lower than that of the fully densified bulk In2O3 and is also the lowest value reported so far. Although the electrical conductivity of IGO is deteriorated by the pore structure, it is overcompensated by the extremely low thermal conductivity. As a result, a high ZT of 0.383 is obtained at 800 °C in this sample. Our results indicate that the pore structure can be a competitive strategy to achieve a high ZT value for thermoelectric materials.
研究领域:
材料科学
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能源科学
✓ 已验证
DOI
高影响因子
RESOURCES CONSERVATION AND RECYCLING
·
2019
·
IF 7.044
Jiazhi Zhou,Nengwu Zhu,Huangrui Liu,Pingxiao Wu,Xiaoping Zhang,Zuqi Zhong
Recovery of gallium from light emitting diodes (LEDs) is receiving great attention due to both high content of gallium and potential risk of environmental pollution . In this study, a novel environment-friendly route was proposed for efficient recovery of gallium from surface mounted device (SMD) of LEDs by using organic acid . Reduction of non-metallic components, selection of lixiviants, optimization of leaching parameters, and possible mechanism of gallium were investigated. Results showed that pyrolysis could reduce non-metallic components effectively, and 22% weight loss was achieved at 733 K. Selection of lixiviant experiments indicated that 83.42% gallium could be extracted from SMD LEDs by oxalic acid , which was much higher than that of 79.89% by hydrochloric acid , 70.62% by citric acid , and 71.69% by DL-malic acid. Further investigation revealed that 90 °C of leaching temperature, 10 g L −1 of pulp density , 0.7 M of oxalic acid and 48–75 μm of particle size were the optimum conditions for effective gallium leaching by oxalic acid. After optimization, the gallium recovery efficiency reached as high as 90.36% in 60 min. Such efficient gallium leaching came from the higher dissociation constant of oxalic acid and the formation of ferrous oxalate which would promote the generation and maintenance of H + . Hence, oxalic acid could be a promising lixiviant for efficient recovery of gallium from SMD LEDs.
研究领域:
材料科学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Hao Chang,Pan Zhang,Rui Guo,Yuntao Cui,Yi Hou,Ziqiao Sun,Wei Rao
Gallium-based liquid metals are applied in the fabrication of soft electronics because of their conductivity and flexibility. However, the large surface tension and weak adhesion of liquid metals limit the available printing substrates. Recent researches indicate that amalgamating metal particles can turn liquid metal from fluid into a paste which has superb electrical conductivity, plasticity, and strong adhesion to substrates. In this work, a recoverable liquid metal paste was made by mixing eutectic Ga–In alloy and nonmetallic SiO2 (quartz) particles (Ga–In–SiO2 paste, called GIS). GIS has excellent conductivity and printable properties similar to those of previously reported liquid metal pastes. Furthermore, the bonding between Ga–In alloy and quartz particles is reversible. In acidic or alkaline solution, Ga–In alloy can be separated from quartz particles and agglomerated to bulk by stirring. Moreover, the study of the mechanism of adhesion behavior suggests that extruding fresh liquid metal droplets to form more oxide and shearing friction are the critical factors for adhesion. This work proposed a new liquid metal paste with a reversible rheological property and promoted the understanding of the working principle of liquid metal paste.
研究领域:
材料科学
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电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 6
·899
·
IF 5.719
Xiaoyan Wu,Wei Li,Qingrong Chen,Caixia Xu,Jiamian Wang,Lingyuan Wu,Guodong Liu,Weiping Wang,Ting Li,Ping Chen,Long Xu
Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.Keywords:Mg-doped gallium nitride;light-induced degradation;photocurrent device;contactless healing
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2016
·
IF 2.758
Renping Cao,Jijun Huang,Xiangfeng Ceng,Zhiyang Luo,Wen Ruan,Qianglin Hu
Novel LiGaTiO 4 :Mn 4+ and LiGaTiO 4 :Mn 4+ , R (R=Mg 2+ and Al 3+ ) phosphors are synthesized by solid-state reaction method in air. Emission spectra of LiGaTiO 4 :Mn 4+ phosphor with excitation 330, 395, and 470 nm contain three emission bands peaking at ~668, 680, and 696 nm in the range of 610–800 nm, and excitation spectrum monitored at 668 nm contains broad excitation band with three excitation peaks located at ~330, 395, and 480 nm within the range 250–600 nm, which indicate that LiGaTiO 4 :Mn 4+ phosphors can be effectively excited by ultraviolet, near ultraviolet, and blue light-emitting diode chips. The optimal Mn 4+ doping concentration is ~0.6 mol% in LiGaTiO 4 :Mn 4+ phosphor. Time resolved luminescence spectra and these lifetime data indicate that it is only a single type of Mn 4+ ion luminescent center in LiGaTiO 4 :Mn 4+ phosphor. Emission intensity of LiGaTiO 4 :Mn 4+ phosphor may be enhanced 1.3–2.2 times by co-doping Mg 2+ and Al 3+ ions. The luminous mechanism of Mn 4+ ion is analyzed by Tanabe-Sugano energy diagram and configurational coordinate diagram.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2018
·
IF 2.732
Qiang Shi,Qingru Wang,Dong Zhang,Qinglin Wang,Shuhong Li,Wenjun Wang,Quli Fan,Junying Zhang
In this study, Gallium oxide (Ga 2 O 3 ) thin films were deposited by vacuum thermal evaporation technique. The effects of annealing temperature on the structural, optical and photoluminescence (PL) properties of Ga 2 O 3 thin films were investigated in detail. The Ga 2 O 3 thin films annealed at lower temperatures were amorphous , while those annealed at above 800 °C were nanocrystalline . The annealing temperature increasing from 400 to 1100 °C results in the band-gap increase from 4.70 to 5.13 eV due to the reduction in density of defect states. Under the excitation at 250 nm, the PL spectra of thin films consisted of a UV emission (300 nm) and two blue emissions (400 nm and 438 nm). The UV and blue luminescence intensities increased as the annealing temperature was increased from 400 to 1100 °C. The blue luminescence is suggested to originate from the recombination of trapped electrons in the donor with trapped holes in the acceptor, where the origin of the donor should be an double ionized oxygen vacancy ( V O ++ ) and the acceptor should be a gallium vacancy ( V Ga ) or gallium-oxygen vacancy pair ( V Ga - V O ++ ).
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Xueying Wang,Yida Lei,Liang Shi,Jie Li,Lichuan Jin,Yulong Liao,Kui Liu,Huaiwu Zhang
The adjustment of crystal structures and properties by ion substitution has received increasing interest in recent years to solve issues related to the preparation of LTCC microwave devices. In this work, Fe 3+ ions were substituted in BaFe 12 O 19 sintered at a low temperature (920 °C). The changes in microstructures, dielectric characteristics, and magnetic properties were all examined. The ferromagnetic resonance linewidth (Δ H ) of BaM ferrite was measured at magnetic fields from 6000 to 24,000 Oe. The results revealed well-grown microstructures of BaM ferrite grains at 920 °C to form typical hexagonal structures. The increase in substitution of Ga 3+ ions decreased the lattice constant and cell volume of the crystals. More interestingly, the dielectric and magnetic properties depicted significant changes in the original dielectric and magnetic parameters of BaM after the substitution of Ga 3+ ions. The permittivity ( ε′ ) rose to a maximum of 16.36 at x = 0.4, while the dielectric loss angle tangent (tan δ ε ) declined to 1.2 × 10^ −3 . As Ga 3+ ions rose, the saturation magnetization 4π Ms decreased from 3168.58 Gauss to 2571.18 Gauss. The remanence ( Mr ) reached a maximum value of 31.07 emu/g at x = 0.4. The ferromagnetic resonance linewidth (Δ H ) of BaM ferrite sample at 31 GHz attained a minimum value of 4216.336 Oe at x = 0.8. In sum, these findings look promising for future fabrication of LTCC microwave RF devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）