CHEMISTRY OF MATERIALS
·
2021
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IF 9.811
Jing Li,Xinglai Zhang,Bing Yang,Cai Zhang,Tingting Xu,Lixin Chen,Liu Yang,Xin Jin,Baodan Liu
Two-dimensional (2D) nanostructures are mainly confined to being obtained from intrinsically layered crystals via an exfoliation approach or epitaxial growth method, thereby greatly limiting the choice of 2D crystals available for high-performance optoelectronic devices. Here, we introduce an efficient PDMS printing strategy to simultaneously realize the controllable preparation and subsequent transfer of a large-area non-layered 2D Ga2O3 amorphous layer on the basis of ultrathin oxide skin of liquid Ga. More importantly, a template-confined reaction of the 2D Ga2O3 amorphous layer is further proposed to achieve other 2D Ga-group crystals including 2D GaN, GaS, and GaP thin layers. The corresponding crystallization and transformation process under the 2D geometrical space is investigated and demonstrated to be polycrystalline nucleation and growth, which still follows the traditional thermodynamic nucleation rule of critical radius. Furthermore, 2D Ga-group semiconductors could easily stack with themselves or other layered 2D crystals such as MoS2 to construct diverse van der Waals heterostructures for the fabrication of high-performance and multifunctional electronics. We believe that the unique and simple synthetic strategy proposed in this work will promote the preparation and transfer of diverse non-layered 2D crystals for the discovery of new phenomena and functional nanodevices.
研究领域:
材料科学
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纳米技术
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半导体物理
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二维材料
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光电子学
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2023
·
IF 3.6
Lin Xiang,Xianju Zhou,Li Li,Faling Ling,Yanhong Li,Jingfang Li,Hongmei Yang
Eu 3+ ions are extensively employed as spectroscopic probes because of the particular emissions due to the unique 4f 6 electronic configuration. Herein, we have developed a series of interesting fluorescent powders of Eu 3+ activated Sr 2 MNbO 6 (M = Ga, In, Gd). When Sr 2 GaNbO 6 :Eu 3+ is excited by the photons in the range of charge transfer band (CTB), the dark red 5 D 0 → 7 F 4 transition predominates the emission, exhibiting an anomalous intensity even higher than that of 5 D 0 → 7 F 1 or 5 D 0 → 7 F 2 . Whilst, if the sample is pumped by f-f characteristic transitions, the hypersensitive 5 D 0 → 7 F 2 transition emerges as the strongest. However, Eu 3+ doped Sr 2 InNbO 6 and Sr 2 GdNbO 6 never demonstrate such results, 5 D 0 → 7 F 1 acts as the most intense one regardless of the excitation wavelength. It is found that Eu 3+ substitutes Sr 2+ site, and cuboctaherdron [SrO 12 ] with O h symmetry is likely to deform to triangular orthobicupola D 3h symmetry, leading to two non-equivalent crystal sites in Sr 2 GaNbO 6 host. But Eu 3+ replaces In 3+ and Gd 3+ position with O h symmetry and has only one site in Sr 2 InNbO 6 and Sr 2 GdNbO 6 . Based on the comparative study on the intensity of 5 D 0 → 7 F 0 transition, as well as the influence factors of temperature, the doping concentration on the relative intensity among 5 D 0 → 7 F J transitions, and the band gaps of these three hosts, the origin of the abnormal intense 5 D 0 → 7 F 4 is ascribed to the mixing of CTB and low-lying 4f 6 configuration as well as two non-equivalent Eu 3+ sites.
研究领域:
材料科学
·
光物理学
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DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
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IF 6.2
Haotian Xie,Ying Tang,Yang Yang,Ning Zhang,Xiaolong Gu,Huaicheng Xiang
In microwave dielectric materials , the phenomenon that the measured permittivity ( ε r ) is inconsistent with the calculated permittivity ( ε r (C-M) ) often occurs. In the present work, the intrinsic factors affecting the microwave dielectric properties of Ga-based garnet Ca 3 B 1.5 Ga 3.5 O 12 (B = Nb, Ta) are studied by bond valence and the Phillips-Van Vechten-Levine (P-V-L) methods, and the relationship between lattice-induced strain effect and dielectric polarization is elucidated. Since the ionic polarizability of Nb 5+ is lower than that of Ta 5+ , the ε r (C-M) values of Ca 3 Nb 1.5 Ga 3.5 O 12 (CNG) and Ca 3 Ta 1.5 Ga 3.5 O 12 (CTG) are 11.06 and 12.17, respectively. However, this is the opposite trend of the measured values (15.00 and 12.62). The global instability index ( GII ) is equal to 0.013 and 0.044 v.u. , respectively. Both the indexes, bond strain index ( BSI ) and GII , are related to the entire crystal structure. A stronger lattice-induced compressive strain and a higher degree of covalency lead to a lower measured ε r , a higher Q×f , a higher temperature coefficient of permittivity τ ε , and a larger negative τ f .
研究领域:
材料科学
·
物理学
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DOI
高影响因子
SOLID STATE SCIENCES
·
2023
·
IF 3.5
Ningxia Li,Qi Luo,Meiyan Cui,Zhiying Zhao,Zhangzhen He
New fluorophosphate compounds H A 5 M 6 (OH) 4 F 4 (HPO 4 ) 8 ( A = K, Rb; M = Fe, Ga) were synthesized by a fluorine-rich hydrothermal method . These compounds crystallize in the monoclinic system with a P2 1 /n space group, exhibiting an open framework structure built by [PO 3 (OH)] groups, [MO 4 (OH)F], and [MO 4 F 2 ] octahedra, where ten-membered-ring channels, eight-membered-ring channels, six-membered-ring channels, and the linear M 3+ trimers are seen. The characterizations were carried out by powder XRD , EDS , FT-IR spectra, and magnetic measurements. The results confirmed that H A 5 Fe 6 (OH) 4 F 4 (HPO 4 ) 8 ( A = K, Rb) show a quite similar magnetic behavior, possessing an antiferromagnetic ordering at 14.7 K and 15.6 K, respectively. The changes of the magnetic entropy for such antiferromagnetic orderings can be estimated as ∼10.7 J mol −1 K −1 and ∼13.4 J mol −1 K −1 .
研究领域:
无机化学
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材料科学
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固体化学
✓ 已验证
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
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2026
·
IF 5.4
Xiudong Zhu,Wei Guo,Zhang Wei,Zhe Sheng,Xiongchao Lin,Deping Xu,Yonggang Wang
M 3+ controls phase evolution: Al/Ga form Cu-Co alloy; In 3+ leads to CuIn, CoIn 2 , In 2 O 3 separation. • Surface hydroxyls and bridged CO provide dual CHₓ sources for C 2+ OH formation. • Medium-strength basic sites and Cu + fraction, not total basicity, govern C 2+ OH selectivity. • Smaller M 3+ radius (Al 3+ ) strengthens metal-support interaction, enhancing dispersion and performance. The modulation of trivalent cations in layered double hydroxide (LDH)-derived catalysts provides an effective strategy for tuning the multifunctional active sites for higher alcohol synthesis. In this study, a series of layered CuCoM catalysts (M = Al, Ga, In) was synthesized via alkaline co-precipitation and evaluated for higher alcohols synthesis via CO hydrogenation. The results demonstrate that the introduction of M 3 + is essential for constructing the LDH precursor structure and significantly influences the phase evolution, morphology, textural properties, reducibility, surface basicity, and chemical states of the catalysts. Among the catalysts tested, CuCoAl exhibited the best overall performance, achieving a CO conversion of 35.60%, an ethanol selectivity of 39.97%, and a C 2 + alcohols selectivity of 73.47%. Structural characterization revealed that CuCoAl had the highest specific surface area and the most uniform dispersion of Cu and Co species, which favored the exposure of accessible active sites. CO 2 -TPD, XPS, and in situ DRIFTS results further indicated that CuCoAl contained abundant surface hydroxyl groups and a higher fraction of Cu + , which promoted the formation of formate species, facilitated non-dissociative CO insertion, and enhanced CH x generation through both formate hydrogenation and bridged CO dissociation on Co sites. The superior catalytic performance of CuCoAl is thus attributed to the synergistic effect of highly dispersed Cu-Co active sites, abundant surface hydroxyl groups, and optimized Cu + /Co interfacial functionalities. This study provides mechanistic insights into trivalent-cation regulation in LDH-derived CuCo catalysts and offers a rational strategy for the design of efficient catalysts for higher alcohol synthesis from syngas. Download: Download high-res image (174KB) Download: Download full-size image
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产品关联
DOI
高影响因子
ACS Photonics
·
2026
·
IF 6
Yujia Luo,Yikun He,Yuyao Feng,Wanzhong Gu,Wanling Mao,Yixuan He,Liang Ke,Yuhui Dong,Yousheng Zou
Eco-friendly Ag–In–Ga–S (AIGS) quantum dots (QDs) are potential alternatives in white light-emitting diodes (WLEDs) due to their high photoluminescence quantum yield (PLQY) and tunable emission. The conventional stacked-film structure using multicomponent QDs suppresses reabsorption losses among different color QDs, but inevitably introduces interfacial optical losses and manufacturing complexity and cost. In this study, a single color-conversion blended film with uniform and excellent luminescence is fabricated using high-PLQY red-emitting (85%) and green-emitting (91%) AIGS QDs simultaneously incorporated into a PMMA matrix. This deliberately utilizes reabsorption governed by the relative ratio between red and green QDs rather than solely suppressing it, thereby eliminating interfacial losses and enhancing luminance, which results in higher photoluminescence emission while maintaining a nearly identical low blue-light transmittance. Furthermore, the blended-film WLED fabricated by integrating the blended film with a blue LED chip exhibited a higher luminance (532.3 cd/m2), representing a greater than 25-fold increase over the conventional stacked-film device (21.0 cd/m2). The blended-film WLED achieved CIE chromaticity coordinates of (0.31, 0.32) and a color rendering index (CRI) of 87.3. The study provides a better understanding of reabsorption in single-layer multicolor QD films and promotes the development of simple and efficient I–III–VI QD backlight films for white-light display applications.
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2026
·
IF 6.7
Bin Xu,Huabing Wang,Xianlin Wang,Youbang Ye,Jiacheng Zhang,Cailing Yang,Dekang Gao,Yang Jin,Diantang Zhang
This study develops a conductive material that remains stable in air at extremely high temperatures. Traditional conductive materials, such as carbon- or metal-based systems, often degrade or oxidize near 1000 °C, which limits their use in harsh environments. To solve this problem, we designed a composite material made of heat-resistant aluminum oxide fibers and a gallium–indium liquid metal. A needle-based method was used to distribute the liquid metal evenly through the fiber network, creating continuous conductive pathways. The material was then tested under high temperatures in air to evaluate its electrical stability and mechanical response. The results show that it maintained stable electrical performance at 1000 °C in air for three hours, with very small resistance changes. After repeated heating and cooling between room temperature and 1000 °C, the resistance remained highly stable. High-temperature treatment also reduced the material’s sensitivity to bending and pressure. Structural analysis indicates that a stable oxide layer formed during heating, while the fiber framework preserved the overall structure. These findings provide a simple and effective strategy for designing flexible conductive materials for high-temperature and harsh-environment applications.
✓ 已验证
DOI
高影响因子
Chem & Bio Engineering
·
2026
·
IF 8.4
Jie Lu,Guoyong Xue,Chenji Hu,Yixiao Zhang,Wei Zhang,Linsen Li,Fuqiang Huang,Liwei Chen
The commercialization of Li metal anodes in all-solid-state lithium batteries (ASSLBs) is hindered by uncontrollable dendritic growth and nonuniform deposition during cycling. Here, we report a facile metal displacement strategy to construct a Li–Ga alloy anodic interlayer to suppress Li dendrite growth and stabilize the anode–solid-state electrolyte interface. The significantly enhanced performance originates from the dramatically improved Li diffusion kinetics, with the Li–Ga alloy modified Li (Li-Ga@Li) anode exhibiting a Li atomic diffusion coefficient twice as high as that of pristine Li metal. Consequently, the Li-Ga@Li|LPSCl|Li-Ga@Li symmetric cells deliver stable lithium stripping/plating behavior over 800 h with minimal polarization and a significantly increased critical current density. When paired with a high-loading LiNi0.8Co0.1Mn0.1O2 (NCM811) cathode active material, Li-Ga@Li|LPSCl|NCM811 ASSLBs demonstrate enhanced rate capability and prolonged cycling stability. This work provides a practical interfacial engineering strategy through diffusivity improvement toward high-performance ASSLBs.
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2026
·
IF 6.7
Yongmei Li,Chang Baocheng,Yuemei Li
Biodegradable zinc alloys have emerged as promising materials for cardiovascular implant applications. However, the practical application of biodegradable zinc alloys is restricted by several key challenges, including uncontrolled corrosion, inadequate endothelialization and reperfusion ischemia‑induced neointimal hyperplasia. Herein, UV‑assisted Ga‑doped ZnO (UV/GZO) and In‑doped ZnO (UV/IZO) layers are deposited on pure Zn substrates. These coatings can regulate Zn 2 + release and promote the growth of vascular endothelial cells. Under 325 nm excitation, electron‑hole pairs are generated in GZO and IZO via band‑to‑band transitions. The resulting photo‑induced energy catalyzes H 2 O and O 2 to produce reactive oxygen species (ROS), which act as chemical linking groups that accelerate polydopamine (PDA) deposition. The PDA coating enhances corrosion resistance and serves as an adhesion‑promoting interlayer. An outer PLGA layer forms robust bonds with the UV/GZO(IZO)/PDA‑modified Zn substrate, establishing a “sandwich protection system”. This system significantly improves adhesion force, corrosion resistance and mechanical stability. Moreover, the Zn/UVGZO/PDA/PLGA and Zn/UVIZO/PDA/PLGA coatings exhibit good antibacterial activity and controlled degradation, which prevents direct contact between endothelial cells and the Zn surface and decreases adverse cellular responses.
✓ 已验证
DOI
高影响因子
ACTA MATERIALIA
·
2026
·
IF 10.7
Zhengniu Pan,Sijing Zhu,Yi Wang,Zhen Fan,Jisheng Liang,Shiyuan Zhao,Jun-Liang Chen,Zhongwei Zhang,Zhixiang Zhang,Qi Zhou,Jie Gao,Huaizhou Zhao,Lei Miao
The n-type Mg 3+δ (Sb,Bi) 2 ‐based system has recently emerged as a breakthrough class of thermoelectric (TE) materials, drawing considerable interest for its eco‐friendly composition and potential to replace conventional commercial counterparts. However, the precise regulation of grain boundaries in Mg-based materials—akin to wielding an accurate scalpel—so as to extremely optimize thermoelectric performance and device properties remains ill-defined. In this study, the incorporation of Ga into the Mg 3 (Sb,Bi) 2 matrix via high‐energy ball milling (HBM) and spark plasma sintering (SPS) yielded an ultralow lattice thermal conductivity of 0.41 W m -1 K -1 at 300 K, a superior figure of merit ( ZT ) exceeding 1.84 at 673 K, and a high average ZT ( ZT avg ) of 1.55 across 300—773 K. The lattice thermal conductivity of Ga‐modified Mg 3+δ (Sb,Bi) 2 is markedly reduced over the entire temperature range, primarily due to the enhanced Kapitza thermal resistivity (ρ Kapitza ) resulting from the introduction of a liquid‐like phase at grain boundaries (GBs), which strengthens phonon scattering. while, Ohmic-like metal–semiconductor junctions form at the interfaces between the Ga/Bi secondary phases and the Mg 3+δ (Sb,Bi) 2 matrix lead to superior power factor. The high performance of Ga‐Mg 3+δ (Sb,Bi) 2 enabled a two‐pair module based on Mg 3.2 Ga 0.04 Sb 1.5 Bi 0.49 Te 0.01 / MgAgSb to achieve a conversion efficiency ( η ) of ∼6.0% at ΔT = 300 K. As a result, this work demonstrates significant theoretical and practical value in areas such as thermal management and thermoelectric material design.
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产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Ze-Yuan Yang,Qiu-Yu Luo,Chong-Yu Wang,Yang-Wei Wang,Jiang-Hu Yu,Xi Yan,Yi-Xin Zhang,Xing Yang,Jing Feng,Zhen-Hua Ge
Due to their high abundance, low cost, and low toxicity, Bi 2 S 3 -based thermoelectric materials without Te are significantly promising for eco-friendly and scalable applications. However, the ZT value of Bi 2 S 3 -based is not high enough and must be further improved. The rare-earth element doping is a promising strategy for synergistically enhancing the electrical and thermal transport properties. This study selected GaTe and YbBr 3 for co-doping in Bi 2 S 3 polycrystals using a solid-state reaction and spark plasma sintering, which enabled simultaneous modulation of the band structure and carrier concentration for significantly enhanced thermoelectric and mechanical properties. Specifically, the synergistic optimization of electrical and phonon transport was initially achieved through GaTe doping in Bi 2 S 3 , which effectively reduced the lattice thermal conductivity while enhancing electrical conductivity. However, the improvement in thermoelectric performance with GaTe doping alone remained limited. Br substituted S to introduce extra electrons, while Yb replaced Bi to reduce the bandgap from 1.38 to 1.05 eV. The two effects synergistically optimized the electrical transport properties of the matrix. As a result, the optimized Bi 2 S 3 + 0.5 wt% GaTe +1.0 wt% YbBr 3 sample achieved an exceptional average power factor of 475.4 μW m −1 K −2 over 323–773 K. Additionally, point defects, dislocations, and micropores induced by the second phase contributed to strong phonon scattering, leading to a low lattice thermal conductivity of 0.56 W m −1 K −1 at 773 K. Consequently, a peak ZT value of 0.67 at 773 K and a high average ZT value of 0.45 over 323–773 K were achieved, which were relatively higher than other values reported in the literature. Furthermore, the mechanical properties were improved, with hardness increasing from 2.55 to 2.93 GPa, making Bi 2 S 3 more deformation-resistant and durable. This study showed that co-doping rare earth elements was an effective approach for enhancing the thermoelectric and mechanical properties of the Bi 2 S 3 material.
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产品关联
DOI
高影响因子
Small
·
2025
·
IF 12.1
Yanlin Zhang,Changming Zhang,Zheng Zhang,Huakang Zong,Pengwei Tan,Liyang Luo,Yuanyuan Luo,Guotao Duan
In the sensing field, the electronic structure of sensing materials has a great influence on the properties of the sensors. Here, by Ga doping pure rhombohedral In 2 O 3 (h-In 2 O 3 ), the double-phase In 2 O 3 (cubic/rhombohedral In 2 O 3 , c/h-In 2 O 3 ) porous nanospheres are obtained. And then Micro Electromechanical System (MEMS) gas sensors based on monolayer film are further fabricated by self-assembling the above nanospheres. The 5% Ga-doped In 2 O 3 sensors exhibit excellent HCHO sensing performance with a high-response (110.6@100 ppm), rapid response/recovery time (5.2/18.4 s) and low limit of detection (50 ppb) at an operating temperature of 180 °C. The 5% Ga-doped In 2 O 3 sensors also show high consistency (fluctuations of only 8.3%). Besides, a handheld device is developed to enable real-time monitoring and early warning of indoor HCHO at ppb-level. Based on experimental results and DFT theoretical calculation, the enhanced sensing mechanism is revealed, which is correlated with the optimization of electronic band structure by Ga doping and the appearance of double-phase heterostructures caused by Ga doping. Therefore, the relationship between electronic structure and gas sensing properties has also been established. This work significantly introduces a novel approach for the mass production of MEMS gas sensors, ensuring high sensitivity, repeatability and consistency.
研究领域:
材料科学
·
传感器技术
·
环境监测
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）