ELECTROCHIMICA ACTA
·
2019
·
IF 5.383
Ning Jia,Mengqi Zhang,Bo Li,Chuanchuan Li,Yangyang Liu,Yupeng Zhang,Tongtong Yu,Yang Liu,Deliang Cui,Xutang Tao
Ternary chalcogenides have drawn intense interest as promising alternative anode materials for Li-storage systems benefiting from their high specific capacity. Herein, the electrochemical performance of a new ternary chalcogenide LiInSe 2 used for lithium ion anode has been reported for the first time. Furthermore, in view of carbon-coating treatment, the optimized anode LiInSe 2 @C for Li-ion batteries exhibits enhanced capacitive behavior and high rate capability. LiInSe 2 @C presents a high reversible capacity of 409.1 mA h g −1 at 100 mA g −1 and a reversible capacity of 270 mA h g −1 after 1000 cycles at 1000 mA g −1 . Further analyses evidence that the outstanding rate performance stems from fast electrochemical kinetics, enhanced by the pseudocapacitive effect and improved electronic/ionic conductivity. These results elucidate the attractive lithium storage performance of LiInSe 2 compound, and would offer a practical polestar to explore novel ternary chalcogenide for energy storage.
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Nanoscale
·
2018
·Vol. 10
·期 34
·15932-15937
·
IF 7.233
Feng Wang,Jian Lin,Hongye Wang,Shansheng Yu,Xiaoqiang Cui,Asghar Ali,Tao Wu,Yang Liu
Herein, the ECL behaviors of precise mono-Cu+ ion doped Cd–In–S supertetrahedral chalcogenide nanoclusters (Cu@CdInS NCs) were investigated, and the effect of mono-Cu+ ions at the vacancy site of NCs on ECL emission performance was also elucidated. Precise mono-Cu+ ion doping not only induced new ECL emission at 596 nm with enhanced efficiency as high as 21.72% relative to [Ru(bpy)3]2+, but also improved acid tolerance of the ECL performances of NCs. In addition, a simple, fast and label-free dopamine ECL sensor with excellent selectivity was achieved.
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高影响因子
Journal of the American Chemical Society
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2014
·
IF 11.444
Jian Lin,Qian Zhang,Le Wang,Xiaochun Liu,Wenbo Yan,Tao Wu,Xianhui Bu,Pingyun Feng
We report a simple and yet effective method to introduce Mn2+ ions into semiconducting nanoclusters with atomically precise control. Our method utilizes one type of micrometer-sized crystals, composed of well-defined isolated supertetrahedral chalcogenide nanoclusters (∼2 nm, [Cd6In28S52(SH)4]) whose core metal site is unoccupied in as-synthesized pristine form. This unique model structure with vacant core site makes it possible to achieve ordered distribution of Mn2+ dopants, and at the same time effectively preclude the formation of Mn2+ clusters in the host matrix. A two-step synthesis strategy is applied to realize an atomically precise doping of Mn2+ ion into the core site of the nanoclusters, and to achieve uniform distribution of Mn2+ dopants in the crystal lattice. The PL, X-ray photoelectron (XPS), as well as the electron paramagnetic resonance (EPR) spectra reveal the successful incorporation of Mn2+ ion into the core site of the nanocluster. Different from the pristine host material with weak green emission (∼490 nm), the Mn2+-doped material shows a strong red emission (630 nm at room temperature and 654 nm at 30 K), which is significantly red-shifted relative to the orange emission (∼585 nm) observed in traditional Mn2+-doped II–VI semiconductors. Various experiments including extensive synthetic variations and PL dynamics have been performed to probe the mechanistic aspects of synthesis process and resultant unusual structural and PL properties. The quaternary semiconductor material reported here extends the emission window of Mn2+-doped II–VI semiconductor from yellow-orange to red, opening up new opportunities in applications involving photonic devices and bioimaging.
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高影响因子
Journal of Materials Chemistry C
·
2016
·Vol. 4
·期 8
·1645-1650
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IF 5.066
Jian Lin,Le Wang,Qian Zhang,Fei Bu,Tao Wu,Xianhui Bu,Pingyun Feng
Chemically co-doping a micron-sized semiconductor single crystal while simultaneously segregating different dopant types uniformly on a nanoscale is synthetically challenging, but often essential for preventing unwanted dopant-related interference that may hamper optic and magnetic applications. Here by starting from a unique molecular crystal composed of well-defined discrete supertetrahedral chalcogenide nanoclusters (NCs), we successfully realized highly effective nanosegregation of dual dopants (Cu and Mn) in Cd–In–S semiconductor crystals. Our method takes advantage of the intrinsic single vacancy at the core of NC that permits the trapping of only one dopant ion. Such single-ion trapping effectively precludes two dopant ions from residing in the same NC, allowing us to target single-crystal white-light emitter by eliminating possible interference between dopants. This new method for controlling the distribution of multiple dopants on a nanoscale provides a promising route to modify and tune optical and magnetic properties of large-sized semiconductor single crystals for use in integrated multifunctional devices.
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Journal of Physical Chemistry C
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2016
·
IF 4.509
Jian Lin,Dan-Dan Hu,Qian Zhang,Dong-Sheng Li,Tao Wu,Xianhui Bu,Pingyun Feng
Solid-state red phosphors of Mn2+-doped nanocrystals usually suffer from poor intensity. While the d–d emission of Mn2+ in yellow window has been extensively studied, shift toward lower energy remains challenging. Typically, intrinsic surface defects and self-purification of dopants are two obstacles for enhancing the intensity of red emission. Moreover, for red phosphors Mn2+ ions also need an appropriate host matrix and environment. Through an in situ doping strategy and optimization of the Mn2+ doping level, intense red-emitting Mn2+ dopant emission is reported here for MnCdInS@InS host. The doping strategy allows doping of Mn2+ at the core and/or surface sites of supertetrahedral “core–shell” nanocluster (Mn@MnCdInS@InS), leading to the red emission (at 643 nm) with over 40% quantum yield. Moreover, systematic control of doping level results in a series of crystalline Mn2+-doped materials with tunable photoluminescence quantum yield. In addition to the synthesis of an important class of red-emitting materials rarely obtained from Mn2+ doping, details of the physical chemistry associated with the doping process are probed with the new fundamental findings reported here.
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RSC Advances
·
2016
·Vol. 6
·期 74
·70452-70459
·
IF 3.289
Makkawi Osman,Yanmin Huang,Wei Feng,Guangbo Liu,Yunfeng Qiu,PingAn Hu
Phase engineering of two-dimensional (2D) materials offers unique opportunities for acquiring novel opto-electronic properties and allows for the searching of outstanding candidates for applications in opto-electronic detectors, sensors, catalysis, or phase-change memory devices. Here, we report the phase-transformation from β-InSe to γ-In2Se3, exploiting the thermal annealing route to trigger the process starting at 200 °C that expands the family of phase-change materials. The presence of γ-In2Se3 is solidly confirmed by the characteristic peaks in X-ray diffraction (XRD) and energy dispersive X-ray (EDX), and is quite stable at ambient condition, thus facilitating substantial application in phase-change memory devices. A Raman shift in the A′1 mode from 225 cm−1 to 230 cm−1 further illustrates the phase transformation. Besides the photoluminescence (PL) peak of β-InSe, the ∼2 eV PL peak, ascribed to γ-In2Se3, is observed in the annealed nanosheet. The increased PL band gap of β-InSe as a function of annealing temperature during phase transformation was possibly affected by the suppressed interlayer coupling, as well as the planar quantum confinement of photo-excited carriers by the external surfaces of the sheets. The photodetector performance with respect to photocurrent, mobility, detectivity, responsivity, and external quantum efficiency was subsequently evaluated after thermal annealing, showing deteriorated optical performance. The present work proved that thermal annealing could induce the successful phase transformation, and adjusted the opto-electronic properties in some extent, providing useful information for processing 2D materials based nano-devices.
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Journal of the American Chemical Society
·
2016
·
IF 13.038
Feng Wang,Jian Lin,Tingbi Zhao,Dandan Hu,Tao Wu,Yang Liu
A deep understanding of distinct functional differences of various defects in semiconductor materials is conducive to effectively control and rationally tune defect-induced functionalities. However, such research goals remain a substantial challenge due to great difficulties in identifying the defect types and distinguishing their own roles, especially when various defects coexist in bulk or nanoscale material. Hereby, we subtly selected a molecular-type semiconductor material as structural mode composed of supertetrahedral chalcogenide Cd–In–S nanoclusters (NCs) with intrinsic vacancy point defect at the core site and antisite point defects at the surface of supertetrahedron and successfully established the correlation of those point defects with their own electrochemiluminescence (ECL) behaviors. The multichannel ECL properties were recorded, and the corresponding reaction mechanisms were also proposed. The predominant radiation recombination path of ECL emission peak at 585 nm was significantly distinguished from asymmetrically broad PL emission with a peak at 490 nm. In addition, the ECL performance of the coreless supertetrahedral chalcogenide nanocluster can be modulated by atomically precise doping of monomanganese ion at the core vacant site. A relatively high ECL efficiency of 2.1% was also gained. Actually, this is the first investigation of ECL behavior of semiconductor materials based on supertetrahedral chalcogenide nanocluster in aqueous solution. Current research may open up a new avenue to probe the roles of various different defects with defined composition and position in the NC. The versatile and bright ECL properties of Cd–In–S NC combined with tunable ECL potential and ECL peak suggest that the new kind of NC-based ECL material may hold great promising for its potential applications in electrochemical analysis, sensing, and imaging.
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高影响因子
CHEMISTRY OF MATERIALS
·
2017
·
IF 9.466
Shu-Fang Li,Xiao-Ming Jiang,Bin-Wen Liu,Dong Yan,Chen-Sheng Lin,Hui-Yi Zeng,Guo-Cong Guo
Developing excellent infrared nonlinear optical (NLO) materials is challenging because of the incompatibility between a large second harmonic generation (SHG) efficiency and a high laser-induced damage threshold (LIDT). Here, we report three NLO chalcogenides, namely, Na2In4SSe6 (1), NaGaIn2Se5 (2), and NaIn3Se5 (3), whose crystal structures consist of supertetrahedral, superpentahedral, and superoctahedral chalcogenide clusters. Importantly, they exhibit SHG responses 7.0-, 2.1-, and 0.3-fold larger than and LIDTs 5.8-, 6.4-, and 10.7-fold higher than those of AgGaS2, respectively, almost achieving balance between large SHG efficiencies and high LIDTs. Theoretical calculations and structural analysis reveal that the enhanced SHG responses can be attributed to the superpolyhedral chalcogenide clusters. The high LIDTs can be ascribed to their small thermal expansion anisotropy. These findings may provide useful insights into the development of infrared NLO materials with superpolyhedron-built structures.
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RSC Advances
·
2016
·Vol. 6
·期 79
·75186-75193
·
IF 3.289
Jie Yang,Chun Fang,Chunxiong Bao,Weiwei Yang,Tao Yu,Weidong Zhu,Faming Li,Jianguo Liu,Zhigang Zou
A Ni3S2 coated indium tin oxide (ITO) core–shell structure on flexible carbon fabrics (CF@ITO@Ni3S2) was prepared by electrodepositing Ni3S2 nanosheets on ITO nanowire arrays grown on flexible carbon fabrics by chemical vapor deposition. The ITO nanowires on carbon fabrics formed a conductive support which offered a large contact surface with the electrolyte and hence was accessible for ion diffusion. Ni3S2 nanosheets were uniformly deposited on the ITO nanowire. The maximum mass loading of Ni3S2 on ITO nanowire array coated carbon fabrics could reach about a quadruple higher amount than that on the bare carbon fabrics. The prepared CF@ITO@Ni3S2 electrodes exhibited excellent capacitive performance compared with Ni3S2 coated bare carbon fabric electrodes (CF@Ni3S2). High areal capacitance of 3.85 F cm−2 and gravimetric capacitance of 1865 F g−1 were achieved when the mass loadings of Ni3S2 on the ITO nanowire arrays were around 4.12 mg cm−2 and 0.96 mg cm−2, respectively. The sample with 0.96 mg cm−2 of Ni3S2 could also deliver 1372 F g−1 when charge–discharge current density reached 50 mA cm−2, indicating the excellent rate capability of the structure. The assembled all-solid-state full cell based on symmetric electrodes obtained a relatively high areal capacitance of 736 mF cm−2 at 8 mA cm−2, which delivered a maximum energy density of 1.02 mW h cm−3 at a power density of 39.9 W cm−3. The outstanding capacitive performance suggests that the CF@ITO@Ni3S2 device was promising for application in an inexpensive energy storage system.
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CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Wenbo Zhu,Zilin He,Zhizhong Zhang
As result of spin-forbidden transition for triplet exciton, the afterglow lifetime of OIHPs was limited to a few seconds. Herein, color-tunable emissions and LPL at room temperature are successfully achieved in (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O OIHP. The prepared (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O exhibit three distinct emissions peaks at 400 nm, 450 nm, and 480 nm, which are revealed from the dynamic transformation from the keto form to the enol from through the ESIPT process. Notably, the (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O singe crystals perform green LPL with a long duration of 15000 s at room temperature. In-depth theoretical calculations and experimental studies suggest that intrinsic defects of (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O introduce trap states that store the charge carrier and release them to the triplet state of organic components of (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O to achieve LPL. This work offers a valuable method for increasing LPL duration for its triplet exciton in OIHPs by introducing intrinsic defective. Finally, the good stability and optical information encryption application of (C 4 H 6 N 3 O) 2 InCl 5 ·H 2 O are demonstrated.
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Nano Energy
·
2024
·
IF 16.8
Jiangtao Guo,Liangfei Duan,Wen Yang,Qin Wang,Yunbo Zhang,Yong Zhang,Zhong Lin Wang,Peizhi Yang
Highly efficient and flexible power sources have always been the focus and goal in the field of wearable electronics. However, the existing wearable power sources are limited by their large size, high weight, electrolyte leakage, and poor mechanical compliance, which seriously hinders their practical applications. Herein, we propose a novel strategy to achieve and demonstrate a fabric-based high-performance wearable triboelectric nanogenerator (TENG) structure. The metals of gallium (Ga), bismuth (Bi), indium (In), and tin (Sn) are mixed according to specific mass ratios, and then they are transformed in liquid phase to form room-temperature multiphase soft metals of GaBiInSn. The material exhibits both metallic and fluidic properties, and possesses a characteristic of multiphase structure. The GaBiInSn material is directly deposited between polytetrafluoroethylene (PTFE) layers and nonwoven fabrics to establish multi-level conductive and frictional interfaces, creating charge transfer and solid-liquid hybrid dielectric layers. Therefore, the thin film-type triboelectric nanogenerators with a structure of PTFE/GaBiInSn/nonwoven fabric (LM-P-TENGs) is manufactured. The LM-P-TENGs can be integrated onto fabrics without compromising their breathability, comfortableness, and flexibility. Particularly, LM-P-TENGs efficiently convert the mechanical energy of human limb movements into sustainable electrical energy output. Under the human limb mechanical triggering conditions, LM-P-TENG achieves a champion specific open-circuit voltage up to 900 V, peak short-circuit current density of 43.3 mA/m 2 , and high power density of 12.56 W/m 2 . This work demonstrates the application potential of room-temperature multiphase soft materials in flexible wearable power sources, while introducing a novel power supply mode for wearable electronics. Additionally, the LM-P-TENGs also present applications in self-powered wearables, medical biosensing systems, human-machine interaction systems, near-eye display systems, etc. for the flexible electronics.
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MATERIALS LETTERS
·
2018
·
IF 2.687
Min Sun,Guowu Tang,Guoquan Qian,Wangwang Liu,Zhenguo Shi,Dongdan Chen,Qi Qian,Zhongmin Yang
In 4 Se 3 exhibits high thermoelectric performance as a typical example of semiconductors, which is a promising thermoelectric candidate for energy conversion applications. Here, InSe alloy core thermoelectric fibers with glass cladding were fabricated by a reactive molten core drawing method. The as-drawn fiber core was found to be InSe crystals as evidenced by X-ray diffraction. The In 4 Se 3 crystals were obtained in the fiber core by annealing the as-drawn fibers. The Seebeck coefficient of the In 4 Se 3 core fibers (−347 μV/K) was enhanced by ∼85% compared with that of the as-drawn InSe core fibers (−189 μV/K). This work constitutes a proof-of-concept that thermoelectric materials can be incorporated into fibers, which have promising applications in fiber-based thermoelectric devices.
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