CRYSTENGCOMM
·
2024
·Vol. 26
·期 28
·3833-3843
·
IF 2.6
Shuting Cui,Yuchao Du,Guoping Li,Qiyong Chen,Ning Tang,Weikun Ge,Lili Xi,Bo Shen,Lijuan Zhao
Gallium oxide (β-Ga2O3) is a well-known extra-wide bandgap semiconductor and one of the promising materials used for power photoelectric devices, gas sensors, catalytic agents, etc. This work presents the suppression of self-trapped holes (STHs) and increase of oxygen vacancies (VO) in β-Ga2O3 microspindles by doping of Zn ions as well as the electrocatalytic activity of these microspindles. Undoped and Zn-doped β-Ga2O3 microspindles were prepared by a hydrothermal method followed by high-temperature calcination. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) results show that the morphology and structure of the samples did not change after low dose of Zn doping. The analyses of temperature-dependent photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) indicate that incorporation of divalent Zn ions as deep acceptors can increase VO concentration and effectively suppress the formation of STHs. Enhanced electrocatalytic activity was observed in Zn-doped β-Ga2O3 microspindles compared with undoped β-Ga2O3 microspindles. The new active sites introduced by Zn doping, higher VO concentration, and suppressed STHs are believed to be responsible for the enhanced electrocatalytic performance of Zn-doped β-Ga2O3 microspindles. This work is expected to expand the application of β-Ga2O3 based microstructures in electrocatalysis and provide innovative ideas for energy and environmental issues.
研究领域:
材料科学
·
电化学
·
半导体物理
·
催化
✓ 已验证
DOI
高影响因子
PeerJ
·
2018
·
IF 2.118
Yu Lei,Chengkun Wang,Quan Jiang,Xiaoyi Sun,Yongzhong Du,Yaofeng Zhu,Yingmei Lu
The toxicity of engineered nanoparticles remains a concern. The knowledge of biohazards associated with particular nanoparticles is crucial to make this cutting-edge technology more beneficial and safe. Here, we evaluated the toxicity of Ga 2 O 3 nanoparticles (NPs), which are frequently used to enhance the performance of metal catalysts in a variety of catalytic reactions. The potential inflammatory signaling associated with the toxicity of HA/β-Ga 2 O 3 :Cr 3+ NPs in primary cortical neurons was examined. We observed a dose-dependent decrease in cell viability and an increase in apoptosis in neurons following various concentrations (0, 1, 5, 25, 50, 100 µg/ml) of HA/β-Ga 2 O 3 :Cr 3+ NPs treatment. Consistently, constitutively active forms of calcineurin (48 kDa) were significantly elevated in cultured primary cortical neurons, which was consistent with calpain activation indicated by the breakdown products of spectrin. Moreover, HA/β-Ga 2 O 3 :Cr 3+ NPs result in the elevation of LC3-II formation, SQSTM/p62, and Cathepsin B, whereas phosphorylation of CaMKII (Thr286) and Synapsin I (Ser603) were downregulated in the same context. Taken together, these results demonstrate for the first time that calpain activation and a disturbance of autophagy signaling are evoked by exposure to HA/β-Ga 2 O 3 :Cr 3+ NPs, which may contribute to neuronal injury in vitro .
研究领域:
纳米技术
·
神经科学
·
毒理学
·
细胞生物学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 60
·37508-37521
·
IF 3.108
Jianping Wei,Juan Yang,Zhihui Wen,Jun Dai,Yao Li,Banghao Yao
Efficient oxidation of methane over heterogeneous catalysts under ambient conditions is still a challengeable study toward C1 utilization and atmospheric cleansing. In this study, by using a hydrolysis method combined with an impregnation process, β-Ga2O3 nanoparticles supported uniformly on activated carbon (AC) can be obtained readily. The as-prepared Ga2O3/AC composites show efficient performance for photocatalytic oxidation of CH4 under ultraviolet irradiation. The experimental results indicate that photocatalytic activity toward CH4 oxidation is strongly dependent on the weight ratio of Ga2O3 to AC. 15%-Ga2O3/AC exhibits the highest catalytic activity, which is more than sixfold of P25, a benchmark photocatalyst. The photoluminescence spectra show the decreased recombination centers and the diminished recombination of photo-generated electrons (e−) and holes (h+) when Ga2O3 nanoparticles were deposited on AC. Further investigation reveals that the excellent photo-oxidation activity for CH4 over Ga2O3/AC can be ascribed to a synergistic effect involving strong adsorption capacity and improved separation of photo-generated e−/h+ pairs. Moreover, the photocatalytic oxidation of CH4 obeys pseudo-first-order kinetics and the cycling experiment indicates that Ga2O3/AC composites possess stable photocatalytic performance for CH4 oxidation. The underlying photo-oxidation mechanism is also investigated using electron paramagnetic resonance (ESR) and radical scavenging experiments. This study demonstrates that photocatalysis with Ga2O3/AC is a highly efficient method toward the oxidation of low concentrations of CH4, which provides valuable information for atmospheric environmental cleansing.
研究领域:
环境科学
·
催化化学
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2022
·
IF 7.392
Lipeng Deng,Haizheng Hu,Yuchao Wang,Chao Wu,Huaile He,Jiaxin Li,Xiaobing Luo,Fabi Zhang,Daoyou Guo
Ga 2 O 3 is an ideal wide bandgap semiconductor for deep ultraviolet photodetectors due to the suitable band gap and excellent material stability, but the inevitable escape of oxygen ions from the lattices always leaves oxygen vacancies and leads to the persistent photoconductivity effect. Plasma treatment technology can use highly chemically active plasma to modify materials' surfaces at room temperature, which is environment-friendly and low carbon. In this work, we have prepared β -Ga 2 O 3 films by plasma-enhanced chemical vapor deposition (PECVD) and used plasma treatment to reduce the oxygen vacancies in-situ. Whereafter, we constructed a Schottky-type photodetector to explore the effect of plasma treatment on the photoelectronic properties of β -Ga 2 O 3 thin film. After plasma treatment, the oxygen vacancy reduces from 44.5 % to 27.3 %, and the photocurrent of β -Ga 2 O 3 photodetector increases from 11 nA to 67 nA at 0 V. Furthermore, the decrease of oxygen vacancy also improves the photoresponse speed (<0.2 s) of the photodetector. The present study provides an efficient treatment method of oxygen vacancies by plasma technology to obtain high-performance self-powered deep-ultraviolet photodetectors.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2025
·Vol. 15
·期 5
·402
·
IF 4.3
Lingfeng Mao,Xiaoxuan Wang,Chaoyang Huang,Yi Ma,Feifei Qin,Wendong Lu,Gangyi Zhu,Zengliang Shi,Qiannan Cui,Chunxiang Xu
Gallium oxide (Ga2O3), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) Ga2O3nanorods were designed to achieve high photodetection performance due to their effective light absorption and light field confinement. Through modulating source concentration, pH value, temperature, and reaction time, 1D β-Ga2O3nanorods were controllably fabricated using a cost-effective hydrothermal method, followed by post-annealing. The nanorods had a diameter of ~500 nm, length from 0.5 to 3 μm, and structure from nanorods to spindles, indicating that different β-Ga2O3nanorods can be utilized controllably through tuning reaction parameters. The 1D β-Ga2O3nanorods with a high length-to-diameter ratio were chosen to construct metal-semiconductor-metal type photodetectors. These devices exhibited a high responsivity of 8.0 × 10−4A/W and detectivity of 4.58 × 109Jones under 254 nm light irradiation. The findings highlighted the potential of 1D Ga2O3nanostructures for high-performance solar-blind ultraviolet photodetectors, paving the way for future integrable deep ultraviolet optoelectronic devices.
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Environmental Sciences
·
2012
·
IF 1.66
Baoxiu Zhao,Mou Lv,Li Zhou
Perfluorooctanoic acid (PFOA) is a new-found hazardous persistent organic pollutant, and it is resistant to decomposition by hydroxyl radical (HO) due to its stable chemical structure and the high electronegativity of fluorine. Photocatalytic reduction of PFOA with β-Ga 2 O 3 in anoxic aqueous solution was investigated for the first time, and the results showed that the photoinduced electron (e − cb ) coming from the β-Ga 2 O 3 conduction band was the major degradation substance for PFOA, and shorter-chain perfluorinated carboxylic acids (PFCAs, C n F 2n+1 COOH, 1 ≤ n ≤ 6) were the dominant products. Furthermore, the concentration of F − was measured by the IC technique and defluorination efficiency was calculated. After 3 hr, the photocatalytic degradation efficiency was 98.8% and defluorination efficiency was 31.6% in the presence of thiosulfate and bubbling N 2 . The degradation reaction followed first-order kinetics ( k = 0.0239 min −1 , t 1/2 = 0.48 hr). PFCAs (C n F 2n+1 COOH, 1 ≤ n ≤ 7) were detected and measured by LC-MS and LC-MS/MS methods. It was deduced that the probable photocatalytic degradation mechanism involves e − cb attacking the carboxyl of C n F 2n + 1 COOH, resulting in decarboxylation and the generation of C n F 2n + 1 . The produced C n F 2n + 1 reacted with H 2 O, forming C n F 2n + 1 OH, then C n F 2n + 1 OH underwent HF loss and hydrolysis to form C n F 2n+1 COOH.
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ENVIRONMENTAL SCIENCE & TECHNOLOGY
·
2013
·
IF 5.257
Xiaofang Li,Xiuzheng Zhen,Sugang Meng,Jiangjun Xian,Yu Shao,Xianzhi Fu,Danzhen Li
Coupling photocatalysts with photonic crystals structure is based on the unique property of photonic crystals in confining, controlling, and manipulating the incident photons. This combination enhances the light absorption in photocatalysts and thus greatly improves their photocatalytic performance. In this study, Ga2O3 photonic crystals with well-arranged skeleton structures were prepared via a dip-coating infiltration method. The positions of the electronic band absorption for Ga2O3 photonic crystals could be made to locate on the red edge, on the blue edge, and away from the edge of their photonic band gaps by changing the pore sizes of the samples, respectively. Particularly, the electronic band absorption of the Ga2O3 photonic crystal with a pore size of 135 nm was enhanced more than other samples by making it locate on the red edge of its photonic band gap, which was confirmed by the higher instantaneous photocurrent and photocatalytic activity for the degradation of various organic pollutants under ultraviolet light irradiation. Furthermore, the degradation mechanism over Ga2O3 photonic crystals was discussed. The design of Ga2O3 photonic crystals presents a prospective application of photonic crystals in photocatalysis to address light harvesting and quantum efficiency problems through manipulating photons or constructing photonic crystal structure as groundwork.
研究领域:
材料科学
·
环境科学
·
光学
✓ 已验证
DOI
高影响因子
Materials
·
2026
·Vol. 19
·期 11
·2417
·
IF 3.7
Boyang Chen,Xinyu Liu,Yiyuan Liu,Zeliang Gao,Zhitai Jia,Wenxiang Mu
HighlightsFor the first time, a high-quality Ti3+-dopedβ-Ga2O3single crystal was successfully grown via the EFG method.The photoelectric properties ofβ-Ga2O3were effectively modulated via Ti3+doping, achieving a moderate semi-insulating state and a reduced bandgap.Ti3+-dopedβ-Ga2O3crystal was fabricated into X-ray detectors with a metal–semiconductor–metal (MSM) structure, demonstrating superior detection performance.Gallium oxide (Ga2O3) is emerging as a promising material for X-ray detectors due to its high sensitivity, high melting point, and stable physicochemical properties. However, intrinsic background shallow donors in raw materials hinder the preparation of high-resistance intrinsic crystals, making doping essential to tailor electrical properties. This study grew Ti3+-dopedβ-Ga2O3single crystals via the Edge-defined Film-fed Growth (EFG) method using Ti2O3as a dopant, achieving high resistivity and a moderate reduction in bandgap. High-resolution X-ray diffraction (HRXRD) showed a rocking curve full width at half maximum (FWHM) of 96.50 arcsec. Compared with the unintentionally doped (UID) crystal, the bandgap exhibited a slight reduction, decreasing from 4.76 eV to 4.59 eV. In the infrared transmission spectra, the onset wavelength of the decrease in transmittance for the Ti3+:β-Ga2O3crystal showed a distinct redshift relative to that of the UID crystal, indicating effective suppression of free electrons within the crystal. X-ray photoelectron spectroscopy (XPS) revealed that Ti3+incorporation minimally affected the valence states of Ga and O or the Ga/O ratio, with no significant shift in valence band maximum (EVBM). A metal–semiconductor–metal (MSM) structured X-ray detector fabricated on polished Ti3+:β-Ga2O3(100) substrate with Ti/Au electrodes exhibited a peak sensitivity of 943.16 μC/(Gy·cm2) at 40 V bias and 2.944 μGy/s dose rate, surpassing the upper sensitivity limit reported for semi-insulating doping bulkβ-Ga2O3detectors. The rise and fall times were 0.23 s and 0.30 s, respectively, with a minimum detectable limit (MDL) of 164.26 nGy/s, demonstrating its potential for high-performance X-ray detection applications.
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Qi You,Jun Zhu,Luomeng Chao,Hai Zhang,Sihua Ha
Controlling the crystallization of gallium oxide (Ga 2 O 3 ) crystal as well as intrinsic defects (oxygen vacancies) are crucial steps in obtaining high-quality material and elucidating how defects affect semiconductor properties . Gallium oxide hydroxide (GaOOH) was firstly synthesized via the reaction of gallium nitrate (Ga(NO 3 ) 3 ) with different alkalis (Urea, NH 3 ·H 2 O, Na 2 CO 3 and NaOH) using the precipitation technique. Then, Ga 2 O 3 powder was obtained by adding carbon powder as reducing agent at the calcination stage. The β-Ga 2 O 3 powder prepared by NH 3 ·H 2 O were found to have the best crystallization as analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). Meanwhile, the photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) results combined with the first-principles calculation indicate that the Ga 2 O 3 powder made by NH 3 ·H 2 O also has the least intrinsic oxygen vacancies .
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Liru Zeng,Zeyulin Zhang,Dinghe Liu,Zhuangjie Xu,Dazheng Chen,Yue Peng,Qian Feng,Yachao Zhang,Jincheng Zhang,Chunfu Zhang,Yue Hao
The interfacial configuration in oxide heteroepitaxy plays a critical role in determining the structural integrity and reliable performance of wide-bandgap heterostructures. Herein, we investigate the orientation-dependent epitaxial growth of high-quality NiO films on β-Ga 2 O 3 via mist chemical vapor deposition (Mist-CVD), exhibiting distinct epitaxial domain configurations depending on the substrate orientation. Combined experimental and density functional theory (DFT) analyses reveal that the synergistic interplay among surface energy, lattice mismatch, and crystal symmetry governs the epitaxial mode and crystalline quality across different substrate orientations. Benefiting from the high-quality epitaxy, the NiO films demonstrate good environmental stability, retaining 94% of their initial current after 30 days of ambient exposure. As a functional demonstration, the NiO/(001) β-Ga 2 O 3 p-n diode exhibits a low leakage current density (2.08 ×10 −8 A·cm −2 @-100 V) and a high breakdown voltage of 885 V, highlighting the critical role of epitaxial interface quality. This study provides mechanistic insight into orientation-regulated oxide heteroepitaxy and offers a viable materials strategy for constructing stable wide-bandgap oxide heterostructures.
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2025
·
IF 3.9
Chen Boyang,Liu Xinyu,Liu Yiyuan,Gao Zeliang,Zhang Kun,Mu Wenxiang
Semiconductor X-ray detectors have attracted considerable attention recently owing to their high sensitivity and excellent stability. Among them, semi-insulating β-Ga 2 O 3 stands out due to its superior thermal stability, high breakdown electric field, and high crystal quality, enabling the fabrication of high-performance detectors suitable for various working environments. In this study, Ni 2+ was introduced into β-Ga 2 O 3 as a deep-level acceptor via doping engineering. A high-resistivity Ni-doped β-Ga 2 O 3 crystal was grown using the edge-defined film-fed growth (EFG) method. X-ray fluorescence spectrometer (XRF) confirmed a Ni doping concentration of 0.544 at%. The crystal exhibited a rocking curve with a full width at half maximum (FWHM) of 65.13 arcsec and clear, symmetric Laue patterns. The ultraviolet–visible (UV–Vis) transmission spectrum showed a cutoff edge at 265.5 nm, yielding a bandgap of 4.67 eV. Moreover, the semi-insulating behavior of Ni: β-Ga 2 O 3 was indicated by the infrared absorption edge extended beyond 10 μm. Raman spectroscopy revealed lattice distortion due to Ni 2+ incorporation, causing shifts in peak positions and intensities without phase change. A metal–semiconductor–metal (MSM)-structured X-ray detector based on Ni: β-Ga 2 O 3 was fabricated and characterized under various biases and dose rates. The device exhibited excellent stability at 1000 V with a high sensitivity of 663.36 μC/Gy·cm 2 , outperforming detectors from other semi-insulating β-Ga 2 O 3 crystals due to its superior crystal quality and high breakdown strength. Furthermore, low oxygen vacancy concentration contributed to fast response times of 0.20 s (rise) and 0.23 s (fall). The detection limit was estimated to be 12.04 nGy/s, highlighting its potential for low-dose X-ray detection.
研究领域:
半导体材料
·
光电子器件
·
辐射探测
·
晶体生长
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale Horizons
·
2026
·
IF 6.4
Liyan Wang,Kaijun Feng,Shuai Liu,Jiehui Tian,Xiangdong Guo,Lin Geng,Yuchuan Xiao,Debo Hu,Lixing Kang,Qing Dai
Twist-polaritonics provides precise control of light-matter states through the stacking of atomically smooth, anisotropic layers, but has been restricted to the van der Waals (vdW) crystals. Non-vdW crystals, despite their symmetry-broken dielectric responses ideal for exotic polaritons, are challenging to prepare as suitable flakes due to their rigid 3D bonding networks, thus limiting the implementation of deep-subwavelength twist-polaritonics. We established a non-vdW polaritonic platform using ultrathin, single-crystalline β-Ga2O3 nanoflakes synthesized by exploiting its anisotropic bonding hierarchy on the quasi-layered (100)B plane. These flakes exhibited deep-subwavelength polariton confinement beyond λ/20. Moreover, their atomic-scale flatness enabled the assembly of twisted bilayers, in which we observed a topological transition of the polariton dispersion from hyperbolic to elliptical, directly controlled by the twist angle. This work positions β-Ga2O3 as a high-performance nanophotonic platform beyond the vdW family, while proposing that anisotropic bonding hierarchy provides a general strategy to unlock non-vdW twist-polaritonic functionality in a wide range of bulk crystals.
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）