JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2017
·Vol. 33
·期 8
·850-855
·
IF 2.764
Nannan Bi,Lei Zhang,Qiang Zheng,Fei Zhuge,Jiupeng Li,Xuan P.A. Gao,Juan Du
A vapor deposition method was applied to synthesize zinc oxide (ZnO) nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM) proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods , which grow along the <0001> direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures . The ZnO nanowires with small diameters tend to show stronger ultraviolet (UV) light emission from the electron-hole recombination near band edge in photoluminescence (PL), while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.
研究领域:
材料科学
·
纳米技术
·
半导体物理
·
光电子学
·
功能材料
✓ 已验证
DOI
高影响因子
RSC Advances
·
2016
·Vol. 6
·期 72
·67827-67832
·
IF 3.289
W. X. Chen,J. S. Yu,W. Hu,Z. L. Chen,H. Memon,G. L. Chen
A core/shell heterostructured nanonanocomposite catalyst based on NiO nanoflakes and titanate nanowires (TNWs) was fabricated. The experimental results showed that the precursor concentration and the reaction time for NiO deposition played significant roles in determining the resulting heterostructure, and an optimal precursor's concentration would result in a well-defined core/shell heterostructure. The XRD analysis demonstrated the existence of the (1 1 1), (2 0 0) and (3 1 1) lattice planes of the NiO nanoflakes. Nearly 100% of the MB pollutant (10 mg L−1) was photodegradaded by the TNWs/NiO catalyst within 50 minutes under UV light irradiation.
研究领域:
材料化学
·
环境催化
·
纳米材料科学
·
光催化降解
·
功能材料
✓ 已验证
DOI
高影响因子
ELECTROCHIMICA ACTA
·
2019
·
IF 5.383
Tao Zhang,Zhiyuan Ling
Architecture construction of electrode is one key factor for hydrogen generation from electrochemical water splitting. To enhance the efficiency of oxygen evolution reaction (OER) at high current density , the architecture construction must be designed skillfully to prevent the surface blanketed by gas bubbles. In this work, we developed a three-level hierarchical surface with cluster-like nickel (Ni) nanowire array. The contact angle measurement indicates the surface having excellent hydrophilicity . The OER performance characterization reveals that after the surface is loaded with NiFe-based catalyst the Ni nanowire array electrode can deliver 500 mA cm −2 at an overpotential of 297 mV in 1 M KOH solution and can survive for over 24 h under 500 mA cm −2 operation. All the results demonstrate that the cluster-like nanowire array is beneficial for the spatial pathway separation for electrolyte supply and gas bubbles departure and the enhancement of OER efficiency.
研究领域:
材料科学
·
电化学
·
能源材料
·
纳米技术
·
催化化学
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2023
·Vol. 49
·期 11
·18776-18785
·
IF 5.2
Jiaxu Cheng,Siwei Jiang,Jiahong Fan,Jun Yao,Ning Du,Xue Li,Ding Wang,Peng Dong,Zhongren Zhou,Yingjie Zhang
Molten salt electrolytic synthesis of silicon is identified as a potential industry method due to its thorough deoxidization of oxide and short-flow synthetic progress. However, figuring out a more efficient and sustainable strategy for the increase of the reduction process as well as the control of product morphology still needs endless research. In this study, benefiting from the high electrical conductivity of metallic silver and the easy separation of silver from silver-silicon alloys during the electrolysis of SiO 2 , metallic silver was introduced to electric-catalyze the production of silicon. Firstly, metallic silver was introduced into the silica matrix by a simple silver mirror reaction. Secondly, the mixed Ag\SiO 2 precursor was located at the cathode for molten salt electrolysis . Finally, silicon nanowires were herein achieved in molten NaCl–CaCl 2 . Mechanisms of metal Ag played during the electric-polarization process of silica and the electrochemical nucleation of silicon were further analyzed by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Field-Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra . The results demonstrate that Ag helps construct Si nanowires via a classic Ag-Si binary alloy-droplet process and provided quantitative guidance for the large-yield production of silicon nanowires via adding 0.08–0.17 g Ag versus 1 g SiO 2 , controlling the temperature at 850–900 °C and electrolysis voltage at 2.6–2.8 V (2.6V at first 1 h and 2.8V at last 5 h). The synthesized silicon nanowires present two types of linear structures based on two three-phase interlines (3PIs) models and a streamed long-straight nanowire is observed.
研究领域:
材料科学
·
纳米科技
·
电化学
·
无机化学
·
能源材料
·
半导体材料
✓ 已验证
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2018
·
IF 2.21
Xuemin Chen,Ruihong Liu,Shizhang Qiao,Jing Mao,Xiwen Du
Laser irradiation is a green, simple and efficient technique for material synthesis. A laser-activated-catalyst (LAC) technique is proposed for fabrication of nanowires in solution under ambient conditions. In the present work, effects of intrinsic influential factors such as the activity of precursor, precursor concentration, laser energy density and laser irradiation time on the LAC growth of cadmium chalcogenide nanowires are systematically investigated, which help to reveal the fundamental principles of LAC technique. Laser energy density and activity of precursor are proven to be vital for the growth of nanowires, and our work demonstrates that LAC is a universal way for synthesis of cadmium chalcogenides semiconductors.
研究领域:
材料科学
·
纳米技术
·
半导体材料
·
无机化学
·
光化学
✓ 已验证
DOI
高影响因子
JOM
·
2019
·Vol. 72
·期 6
·2245-2249
·
IF 2.305
Zhang Yannan,Zhang Yingjie,Li Xue,Liu Jiaming,Zhang Mingyu,Yang Xi,Huang Mengyang,Xu Mingli,Dong Peng,Zhou Zhongren
The molten salt electrolytic method was introduced to prepare metallic silicon that simply utilizes SiO 2 powder as the raw material and equimolar CaCl 2 -NaCl as the electrolyte under 1.8 V current at 700°C for 5 h.
The electrochemically synthesized silicon was in the form of nanowire structures with average sizes of 90 nm in diameter and over 1 μm in length. The current efficiency and specific energy consumption of producing silicon nanowires were calculated to be 79.2% and 8.703 kWh/kg, respectively. Benefiting from the synthesized nanowire structure, the silicon anode exhibited a high initial discharge-specific capacity of 3348.1 mAh/g with an initial coulombic efficiency of 85.2%.
The present research provides a straightforward idea to show the feasibility of synthesizing silicon-based material by the molten salt electrolytic method and to introduce the application of synthesized silicon nanowires to lithium-ion battery systems.
研究领域:
材料科学
·
电化学
·
纳米科技
·
能源存储
·
无机合成
✓ 已验证
DOI
高影响因子
RSC Advances
·
2015
·Vol. 5
·期 91
·74251-74255
·
IF 3.84
Juan-Ye Wang,Hong-Dan Peng,Jia-Mei Yang,Jing-Hui Yan,Ge-Bo Pan
We develop a facile approach for the one-step growth of ultralong and high-quality NiOEP nanowires in a large area, through a solvent-induced self-assembly method without using any structure directing agents. The size of the nanowires can be controlled by changing the composites of solvent mixtures. Being assembled in visible-light sensors, these nanowires exhibit a fast, reversible, and stable response. The highest Ion/Ioff ratio and photoresponsivity of photodiodes could reach 681 and 10.1 mA W−1, respectively, which could be attributed to the perfect single crystal quality, large surface to volume ratio, and fewer recombination barriers within the nanostructures. The facile fabrication and good photoresponse make NiOEP nanowires promising in optoelectronic applications.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
物理化学
·
功能材料
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 18
·17440-17446
·
IF 2.195
Wang Tianxiong,Meng Xianquan
We try to synthesize In x Ga 1−x Sb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
固体电子学
·
晶体生长
✓ 已验证
DOI
高影响因子
Applied Materials Today
·
2024
·
IF 7.2
Lingyan Zheng,Zhen Liu,Shuwen Xin,Qi Chen,Jinbo Ming,Liren Wu,Jiaqi Xu,Peilong Xu,Kai Liu,Ramakrishna Seeram,Fengyun Wang
A pivotal characteristic of neuromorphic systems lies in their inherent capacity for self-adaptation, facilitating environmental adaptation through the attenuation of response to repetitive stimuli. Existing electrolyte-gated synaptic transistors face challenges in simulating these self-adaptive behaviors of the brain. In this work, flexible indium zinc tin oxide (IZTO) nanowires-based synaptic transistors exhibiting self-adaptive behavior were fabricated for the first time via a facile electrospinning technique. The prepared transistors can realize typical synaptic functions by continuously modulating the conductance, including excitatory/inhibitory postsynaptic current and short/long term potentiation. These properties are well maintained even under a bending radius of 12 mm. Additionally, the neuromorphic system based on IZTO nanowires-based transistors achieves a high recognition accuracy exceeding 90 % for hand-written digits recognition. The synaptic transistor exhibits obvious self-adaptive behavior and a low energy consumption with reduction of 8.2 %. Self-adaptive neuromorphic flexible transistors can not only enhance their resemblance to biological systems, but also advance the development of wearable devices and neuromorphic calculation.
研究领域:
材料科学
·
纳米科技
·
生物电子学
·
神经形态工程
·
柔性电子器件
✓ 已验证
DOI
高影响因子
ELECTROCHIMICA ACTA
·
2015
·
IF 4.504
Peng Zhang,Zhimeng Liu,Yuping Liu,Hongbo Fan,Yuanqi Jiao,Baiman Chen
In this work, we demonstrate a facile approach to synthesize high-performance and stable TiO 2 @PANI core-shell nanowires (NWs) as flexible electrodes for solid-state supercapacitors (SCs). The TiO 2 @PANI core-shell NWs are grown directly on highly conductive carbon cloth, which not only give efficient charge transport and accessible diffusion of the electrolyte, but also provide large surface area and active sites for redox reaction as well as good strain accommodation. Such these features enable them to deliver a large areal capacitance of 520.3 mF/cm 2 at 0.5 mA/cm 2 with outstanding rate capability. Furthermore, a flexible and stable solid-state SC device based on these TiO 2 @PANI core-shell NWs is also demonstrated. The as-fabricated solid-state SC device yields a remarkable volumetric capacitance of 898.4 mF/cm 3 , excellent flexibility and significant cycling stability with more than 97.2% retention of its capacitance after 10000 cycles. We believe that these findings may open up new opportunities to prepare high-performance PANI-based electrodes for flexible solid-state SCs.
研究领域:
材料科学
·
纳米科技
·
电化学
·
能源存储
·
功能材料
·
柔性电子学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Juan Hong,Kun Cheng,Guiyin Xu,Myles Stapelberg,Yuan Kuai,Pengcheng Sun,Subing Qu,Zexin Zhang,Qidong Geng,Zhuangzhao Wu,Meifang Zhu,Paul V. Braun
Si/Cu/Zn ternary microspheres are prepared by a pulsed electrical discharging method in a scalable manner. Zn and partial Si within these microspheres can then be selectively removed by chemical etching to form Si/Cu nanowires. The Si/Cu (~62 atom% Si) nanowires show a high discharge capacity of 2092 mAh g −1 and a high capacity retention after 500 cycles at a current density of 200 mA g −1 . The excellent rate and cycling performance are attributed to the conductive Cu network and nanowire structure, which increases the electric conductivity of the electrode and accommodates the volumetric change of silicon during the charge/discharge process. Furthermore, the Si/Cu nanowire anode utilizes relatively cheap materials and flexible processing methods, costing approximately $0.3 g −1 . This work presents a novel method to prepare nanowire-like Si-based anode materials , which is promising to boost the yield of Si alloy NWs with low cost.
研究领域:
材料科学
·
电化学
·
纳米技术
·
能源存储
·
功能材料
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS CHEMISTRY
·
2011
·Vol. 21
·期 18
·6736-6741
·
IF 5.101
Xiwei Zhang,Jiansheng Jie,Zhi Wang,Chunyan Wu,Li Wang,Qiang Peng,Yongqiang Yu,Peng Jiang,Chao Xie
Single-crystal p-type ZnSe nanowires (NWs) with zinc blende structure and [21–1] growth direction were synthesized by using bismuth (Bi) as dopant via a thermal co-evaporation method. The ZnSe : Bi NWs showed evident p-type conductivity with hole concentration up to 4.1 × 1018 cm−3 after the acceptor activation. Negative photoconductivity was first investigated in the p-ZnSe NWs, i.e., the conductivity of the NWs under light was dramatically lower than that in the dark. Surface effects arising from oxygen absorption and photo-desorption were suggested to be responsible for this. By using Al as the Schottky gate, high-performance nano-metal-semiconductor field-effect transistors (nanoMESFETs) were constructed, and measurements on the Al/p-ZnSe NW Schottky diode also revealed the bias-dependent photoresponse. It is expected that the p-type ZnSe : Bi NWs will have great potential in nano-optoelectronic applications.
研究领域:
材料科学
·
半导体物理
·
纳米技术
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）