Small
·
2026
·
IF 11.8
Wenyu Yan,Xinyang Xu,Mutian Rao,Bing Yuan,Sufang Li,Yingpeng Wu,Lu Huang
Traditional electromagnetic wave (EMW) absorbing materials are limited by their fixed electromagnetic parameters and structural characteristics, making it difficult to meet the demands of dynamic adjustment in complex electromagnetic environments. The dynamic tunability of wave-absorbing materials can be efficiently achieved by applying external forces to adjust the structure. However, repeated external forces can easily lead to structural damage and performance deterioration. To address these challenges, a flexible, broadband wave-absorbing material with adjustable absorption and self-healing capabilities is fabricated by combining a liquid metal (LM) based wave absorber with a self-healing polymer. Benefiting from LM's high conductivity and deformability and the polymer's self-healing capacity, the wave-absorbing material with high extensibility (∼3000% strain) not only exhibits an excellent effective absorption bandwidth (EAB) of 7.50 GHz in the X and Ku bands, but also can dynamically adjust its wave-absorbing performance under external force. Moreover, the structure and microwave absorption performances of this material can be self-healing at room temperature after damage, recovering ∼98% of its original EAB. Overall, this work provides crucial insights for the development of flexible electromagnetic materials.
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PubMed
高影响因子
Carbon Energy
·
2026
·
IF 21.4
Pubao Peng,Yang Geng,Jiajun Nan,Song Li,Dewei Zhang,Qing Lin,Yaru Gong,Guodong Tang
Polycrystalline SnSe has attracted significant attention due to its facile processing, machinability, and scale-up application. However, n-type polycrystalline SnSe consistently exhibits inferior thermoelectric performance compared to p-type polycrystalline, because SnSe is an intrinsic p-type semiconductor. Here, we promoted the thermoelectric performance of n-type polycrystalline SnSe through manipulating the band structure and dislocations. The band convergence and enhanced density of states in the electronic structure of SnSe promoted by Pb/Ge/Br codoping, lead to significant enhanced Seebeck coefficient. The carrier concentration was simultaneously enhanced through Ge/Pb/Br codoping. The combination of a large Seebeck coefficient and the enhanced electrical conductivity gives rise to a high power factor as high as 7.47 μW cm −1 K −2 at 873 K. Furthermore, we found that dopants induce strong atomic strain disturbance in the SnSe matrix because of large differences in atom radius with host elements, leading to the formation of high-density dislocations. The presence of dislocations and nanoprecipitates forms strong phonon scattering centers, effectively scattering phonons and suppressing lattice thermal conductivity. As a result, a high peak ZT of 1.6 has been obtained in n-type Sn 1.04 Ge 0.02 Pb 0.02 Se 0.97 Br 0.03 .
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CHEMICAL ENGINEERING JOURNAL
·
2026
·
IF 12.5
Chen Jin,Lingfeng Wang,Zhenke Chen,Hang Che,Shuzhong Wang,Zhiheng Liu,Tao Chen,Li Wang,Yuyuan Zhao,Xinhua Wang,Haoyuan Zheng,Haizhen Liu,Mi Yan
This study presents the preparation of a partially etched Ti 2 AlN-derived composite with a combination of Ti 2 N, residual Ti 2 AlN, and in-situ TiN nanoparticles. The resultant two-dimensional ternary composite was used as a catalyst to enhance the hydrogen storage capacity of NaAlH 4 .Although NaAlH 4 possesses a high theoretical hydrogen storage capacity of 7.4 wt%, its practical application is plagued by several problems: high temperature (~180 °C) to release hydrogen, slow kinetics, and poor reversibility. Herein, Ti 2 N was prepared by etching the Ti 2 AlN MAX phase. The results show that the catalytic effect is optimal when the Ti 2 N content is 7.5 wt%, with the starting temperatures of the two-step hydrogen release from NaAlH₄ decreasing from 180 °C and 260 °C to 98.4 °C and 163.3 °C, respectively. Meanwhile, the apparent activation energies of the two-step reactions decrease from 128 kJ/mol and 160 kJ/mol to 66.0 kJ/mol and 91.6 kJ/mol, respectively, with the kinetic performance significantly improved. Importantly, Ti 2 N/NaAlH 4 composites retain more than 95% of their hydrogen storage capacity after 10 cycles. Detailed characterizations using XRD, XPS, and TEM disclosed that the coexistence of multi-phases in Ti 2 N/NaAlH 4 composites induces synergistic catalytic effects: stable Ti 2 AlN provides electrically conductive pathways, while the reversible phase transformation between TiAl and TiAlH x occurs at the interface and nano-sized TiN transformed into TiAl 3 , enabling improved hydrogen gas dissociation. Collectively, these results provide new fundamental insights into optimizing the properties of Ti 2 N MXenes as catalysts in complex hydride hydrogen storage materials and establish key design principles to inspire the development of various composite materials for efficient and practical solid-state hydrogen storage systems.
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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2026
·
IF 5.2
Xueli Zuo,Feida Chen,Shujie Wu,Wei Zheng,Yuan Liu,Jun Li,Jifeng Zhang,Xiaobin Tang
Simultaneously optimizing electrical and thermal transport properties remains a major challenge for thermoelectric materials. In this work, high-entropy secondary phases (HE2P) were introduced into a Cu-doped PbTe matrix to improve the thermoelectric performance of n-type PbTe. Carbon-coated HE2P particles were incorporated into the PbTe matrix through vacuum melting and fast hot-pressing, resulting in a hierarchical microstructure with refined grains, heterointerfaces, and defect structures. The introduced HE2P effectively suppresses lattice thermal conductivity through enhanced phonon scattering induced by interfaces, lattice distortion, and mass fluctuation. Meanwhile, the heterogeneous interfaces introduced by the carbon-coated HE2P particles may also influence carrier transport behavior. As a result, the composite with 7% HE2P achieves a low lattice thermal conductivity of 0.39 W m −1 K −1 at 838 K and a peak ZT value of 1.38, together with an average ZT of 1.01 over 300–850 K. These results suggest that incorporating high-entropy secondary phases provides a feasible approach for improving the thermoelectric performance of PbTe-based materials.
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Songtao Dong,Tian-yu Zhang,Jing Luan,Honglei Wang,Lei Wang,Hongbo Ju
As a viable p-type thermoelectric (TE) material, Cu 2 SnSe 3 has attracted increasing attention, primarily due to its moderate band gap and tunable electronic structure. Nevertheless, its practical TE utilization is significantly limited by its inherently high lattice thermal conductivity ( κ l ) and suboptimal power factor. Herein, a Fe/Mn co-doping strategy is proposed to concomitantly regulate electrical and thermal transport properties, thereby achieving a remarkable improvement in the overall TE performance. A series of Cu 2 Sn 1–2x Fe x Mn x Se 3 (x = 0, 0.02, 0.04, 0.06) ceramic samples were fabricated via vacuum-based melting followed by hot-press sintering, which concurrently introduced abundant lattice defects and a CuSe secondary phase. These multi-scale structural features significantly enhance phonon scattering, causing a substantial reduction in thermal conductivity. Consequently, the total thermal conductivity of Cu 2 Sn 0.92 Fe 0.04 Mn 0.04 Se 3 is reduced to a minimum value of 0.432 W m −1 K −1 at 773 K. Meanwhile, Fe/Mn co-doping notably increases the charge carrier concentration ( n ), resulting in a dramatic enhancement in electrical conductivity—from 189.8 S cm −1 for Cu 2 SnSe 3 to 1381 S cm −1 for Cu 2 Sn 0.92 Fe 0.04 Mn 0.04 Se 3. Although the Seebeck coefficient exhibites a slight to moderate reduction, the significant increase in electrical conductivity prevails, yielding a substantially optimized power factor ( PF ). A maximum PF of 500.1 μW m −1 K −2 was achieved, together with a peak ZT value of 0.89 at 773 K, representing a 5.23-fold enhancement compared to the undoped Cu 2 SnSe 3 sample ( ZT = 0.17). In addition to enhancing thermoelectric performance, Fe/Mn co-doping significantly improves the mechanical of Cu 2 SnSe 3 . Specifically, the Young’s modulus ( E ) and hardness ( H ) of Cu 2 Sn 0.92 Fe 0.04 Mn 0.04 Se 3 increased by 18.2% and 25.2%, respectively, relative to the undoped sample—demonstrating markedly enhanced mechanical robustness. These results establish Fe/Mn co-doping as an effective and versatile strategy for decoupling electrical and thermal transport in Cu 2 SnSe 3 -based materials, thereby providing a promising pathway toward high-performance thermoelectric materials with superior structural integrity.
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JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Yawen Liu,Chengzheng Ye,Shanbo Cui,Chang Su,Kai Guo,Peng Hu,Yang Jiao,Haibo Fan,Feng Teng,Xin Zhao,Jiaming Song
As a transition metal phosphorus trichalcogenide semiconductor, SnPSe 3 exhibits high carrier mobility and excellent light absorption capability, demonstrating significant application potential in the field of photodetection. Photoelectrochemical (PEC) photodetectors have garnered significant attention due to their inherent self-powered nature and straightforward fabrication process. In this study, SnPSe 3 bulk crystals were synthesized via chemical vapor transport method and the SnPSe 3 -based PEC photodetector was further fabricated using drop-coating technique. The device’s self-powered photoelectric performance was investigated in acidic electrolyte environment by varying the incident light power, wavelength, and bias voltage. It showed that the device achieved self-powered response across a broad spectral range of 400–900 nm. Under white light and self-powered conditions, the photocurrent density and responsivity reached maximum values of 18.53 µA cm −2 and 75.44 µA W −1 , respectively. Excellent self-powered operation stability was confirmed after 10,000 s cyclic test. At 0 V bias, the device demonstrated optimal optical response performance in the visible light region (400–520 nm) and the response times reached 7/8 ms at 520 nm. This study implies promising application potential of SnPSe 3 in high-performance energy saving optoelectronic devices in wireless optical communication.
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ACS Applied Energy Materials
·
2026
·
IF 5.5
Zhongshuo Li,Tingting Zhang,Zhangheng Lai,Yutao Mo,Zhengmao Luo,Ning Qi,Zhiquan Chen
SnTe is widely recognized as a promising alternative to environmentally harmful PbTe for thermoelectric applications at moderate and high temperatures. Nevertheless, due to the ultrahigh hole concentration as well as lattice thermal conductivity, the thermoelectric performance of pure SnTe is greatly constrained. In our work, a novel strategy was put forward to optimize the relatively poor thermoelectric performance of SnTe by simultaneously incorporating In2Se3 and Cd. The Seebeck coefficient was apparently improved through the whole temperature range originating from the introduction of resonant energy levels achieved by In doping, while lattice thermal conductivity was decreased to a relatively low level of ∼0.49 W m–1 K–1 at 873 K, owing to a decrease in sound velocity and strong scattering on phonon caused by nanopores and dislocations after doping. Profiting from the synergistic optimization thermoelectric performance strategies, a peak zT of 1.32 at 873 K was achieved in Sn0.96Cd0.04Te+1%In2Se3, which represents a remarkable 89% increase over pristine SnTe. And an average zT of 0.66 from 303 to 873 K was also obtained. Our work provides a new strategy for multifunctional synergistic modulation of the thermoelectric properties of SnTe-based materials.
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高影响因子
CRYSTAL GROWTH & DESIGN
·
2026
·
IF 3.6
Jingdan Lei,Yajing Wang,Xiaoyun Yang,Xiwei Zhang,Di Yuan,Huijuan Geng,Dan Hu,Gui Yang,Chao Wang
Polycrystalline SnSe is more favorable for practical applications compared with its single-crystalline counterpart due to its easier scalability and mechanical robustness. However, its TE performance is limited by poor electrical transport properties, resulting in a low carrier concentration and modest power factor. Here, we demonstrate both theoretically and experimentally that alkali metal Li doping serves as an effective carrier engineering strategy to overcome performance limitations. First-principles calculations reveal that Li acts as an efficient acceptor, inducing a significant charge transfer and modifying the electronic structure. Experimentally, doping Li increases the carrier concentration 2 orders of magnitude up to 1.8 × 1019 cm–3, resulting in significantly enhanced electrical conductivity and a peak power factor of 7.1 μW cm–1 K–2. Eventually, a high zT value of ∼2.0 at 823 K is achieved in Li-doped SnSe. This work offers important insight for the rational design of high-performance polycrystalline SnSe.
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Materials
·
2025
·Vol. 18
·期 12
·2675
·
IF 3.2
Rui Hu,Di Xie,Yi Jin,Xiaojie Ren,Xiang Huang,Yitong Ji,Xiaotong Liu,Xueyuan Yang,Wenchao Huang
Conventional fabrication of high-efficiency organic solar cells (OSCs) predominantly relies on vacuum-evaporated metal top electrodes such as Ag and Al, which hinder large-scale industrial production. Gallium-based liquid metals (GaLMs), particularly the eutectic gallium–indium alloy (EGaIn), represent promising candidates to conventional vacuum-evaporated metal top electrodes due to their excellent printability and high electrical conductivity. In this study, we fabricated vacuum-free OSCs based on GaLM electrodes (Ga, EGaIn, and Galinstan) and analyzed the device performances. Rigid devices with EGaIn electrodes achieved a champion power conversion efficiency (PCE) of 15.6%. Remarkably, all-solution-processed ultrathin flexible devices employing silver nanowire (AgNW) bottom electrodes in combination with EGaIn top electrodes achieved a PCE of 13.8% while maintaining 83.4% of their initial performance after 100 compression–tension cycles (at 30% strain). This work highlights the potential of GaLMs as cost-effective, scalable, and high-performance top electrodes for next-generation flexible photovoltaic devices, paving the way for their industrial adoption.
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高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Yihui Xia,Xiang Zhang,Liangliang An,Yuhui Xie,Feng Wu,Yi Mei,Delong Xie,Dong Feng
A novel, environmentally friendly flame retardant (FB) composite was developed by integrating cross-linked kraft lignin (FSK) and black phosphorus (BP) for thermoplastic polyurethane (TPU) applications. FSK was prepared by C C Friedel-Crafts crosslinking between benzene rings and amino/silanization between hydroxyl groups of lignin. The FB, with an optimal FSK:BP ratio of 7:3 at 1 wt%, significantly improved the flame retardant properties of TPU. It achieved a limiting oxygen index (LOI) of 30.7%, a 91% increase in char residue, and UL-94 V-0 classification, surpassing the performance of pure TPU. Cone calorimeter tests revealed a 21.26% reduction in total heat release (THR) and a 37.06% reduction in peak heat release rate (PHRR). The flame retardancy mechanism involved BP and FSK's crosslinked structure catalyzing the formation of a stable graphitized char layer, while FSK, through its nitrogen and silicon components, released inert gases such as NH 3 /CO 2 , enhancing the stability of the char layer. The synergistic effect provided dual-phase flame retardancy (condensed-phase and gas-phase) at low additive levels, maintaining mechanical properties (tensile strength: 20.1 MPa). This approach, using biomass-derived lignin and low levels of BP, offers an environmentally friendly alternative to traditional flame retardants, making it a promising strategy for high-safety applications.
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高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2025
·Vol. 45
·期 15
·117636
·
IF 6.2
Shaoqing Lu,Shengmao Sha,Jian Wang,Lulu Huang,Yu Liu,Jian Yan,Yucheng Wu
PbSe is a promising thermoelectric (TE) material with excellent carrier transport properties and an economic advantage due to the lower cost of selenium compared to tellurium, making it a potential alternative to PbTe. Improving its TE performance through dual-element doping represents a widely employed approach. In this study, the TE properties of n-type PbSe are improved through the simultaneous incorporation of Sn and Cu into the PbSe matrix. By precisely controlling the Pb content, we enable Sn dopants to occupy both interstitial sites and substitutional Pb positions, thereby significantly enhancing electrical conductivity . Meanwhile, interstitial Cu exhibits a temperature-dependent dissolution-precipitation behavior, dynamically turning the carrier concentration and improving electrical transport properties. The dual-doping strategy also introduces abundant point defects , effectively scattering phonons and reducing the lattice thermal conductivity . As a result, the electrical transport properties of the co-doped Pb 0.99 Sn 0.01 Se-0.7 %Cu sample are further improved by Pb regulation, achieving a power factor of 24.2 mW cm⁻¹K⁻² and a peak zT value of 1.80 at 728 K. These results demonstrate the effectiveness of the Sn and Cu co-doping approach in enhancing the TE performance of PbSe, offering promise for the development of cost-effective and high-performance TE materials.
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高影响因子
Energy & Environmental Materials
·
2025
·
IF 14.1
Wenying Wang,Xinglong Wang,Lin Bo,Wenying Zhou,Changcun Li,Zheng Zhang,Futian Liu,Degang Zhao
Cu 3 SbSe 4 -based compounds have attracted considerable potential in the realm of thermoelectric research owing to their distinctive physical properties and environmental compatibility. The material was efficiently synthesized via rapid microwave melting processing, aiming to improve its viability as a cost-effective thermoelectric option for practical applications. This study emphasizes the stepwise optimization of thermoelectric transport properties. The foremost effort involved improving transport electrical transport properties through the co-alloying of Sn and Te to determine optimal compositional configurations for superior thermoelectric performance. Iterative refinement enabled increased hole carrier concentration, which effectively addressed the intrinsic limitation of low electrical conductivity, thereby increasing the power factor by three times. Based on this foundation, a hierarchical multiscale structure was developed through the incorporation of AgCuTe as a secondary phase, which enhanced phonon scattering across multiple scales and consequently reduced thermal conductivity by 65% relative to pristine samples. The synergistic optimization of electronic and thermal transport properties culminated in a significant improvement in zT . The optimized Cu 3 SbSe 4 –1.0 wt% (Sn, Te)-2.5 wt% AgCuTe composite demonstrated a peak zT of 1.21 at 650 K and an average zT avg of 0.52 across the range of 300–650 K, contributing to a deeper understanding of the transport properties for chalcogenide-based thermoelectric compounds.
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