Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 40
·19743-19749
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IF 9.931
Chengcheng Yan,Long Lin,Dunfeng Gao,Guoxiong Wang,Xinhe Bao
The electrochemical CO2 reduction reaction (CO2RR) powered by renewable electricity has emerged as a promising approach to alleviate global warming and energy depletion simultaneously. Notably, efficient catalysts containing Earth-abundant elements to achieve high CO2RR performance are in great demand for future applications. Herein, carbon-supported gallia gel nanoparticles were synthesized by precipitating gallium nitrate on carbon black in an ethanolic ammonia solution. Nano-sized gallia nanoparticles uniformly dispersed on the carbon support achieved a maximum CO faradaic efficiency of 77.0% at −0.71 V vs. the reversible hydrogen electrode (RHE) in CO2-saturated 0.1 M KHCO3 solution, showing a dramatic improvement compared to a bulk Ga electrode with only 24.2% CO faradaic efficiency at −0.80 V vs. RHE. X-ray photoelectron spectroscopy measurements revealed that surface Ga3+ species were reduced to metallic Ga when subjected to a negative potential during the CO2RR, indicative of the formation of oxide-derived active gallium sites. Control experiments further highlighted the necessity of close coalescence between the nano-sized gallia particles and the conductive carbon support. The present study underscores the feasibility of improving the CO2RR performance of Ga-related materials through nanostructuring of oxide-derived gallium catalysts.
研究领域:
材料科学
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环境科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Intelligent Systems
·
2019
·Vol. 1
·期 7
·1900064
·
IF 0
Daolin Wang,Zhihua Lin,Chang Zhou,Changyong Gao,Qiang He
One of the great challenges in the field of tiny machines is the capability of engineering liquid metal micromachines to autonomously move within confining channels to perform various complex tasks. Herein, liquid metal gallium micromachines that significantly increase their velocity in confining channels with adaptive deformation under exposure to an electric field are presented. The liquid metal gallium micromachines move toward the negative electrode under the propulsion of hydrogen bubbles, which is obviously different from the previous report that liquid metal gallium alloy (i.e., Galinstan) micromachines move to the positive electrode, owing to the surface tension gradient. More importantly, the liquid metal gallium micromachine can adaptively deform and accelerate in confined channels. The velocity of liquid metal gallium micromachines increases with the decrease in the width of channels. It is found that the speed-up motion of liquid metal gallium micromachines is caused by the enhanced electro-osmosis effect in confining channels. The findings not only help understand the role of the confinement effect on the motion of liquid metal micromachines but also provide a novel strategy to manipulate the motion velocity of liquid metal micromachines for specific applications.
研究领域:
材料科学
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微纳米技术
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物理学
✓ 已验证
产品关联
DOI
JOURNAL OF CHEMICAL AND ENGINEERING DATA
·
2015
·
IF 2.037
Fangbiao Zhao,Yongcun Zou,Xueju Lv,Hongwei Liang,Qiong Jia,Weikun Ning
Magnetic cobalt ferrite (CoFe2O4)-coated zeolite was prepared with a hydrothermal method and used for the adsorption of gallium and indium. The magnetic zeolite was characterized with X-ray diffraction, X-ray photoelectric spectroscopy, Fourier-transformed infrared spectroscopy, scanning electron microscopy, and transmission electron microscopy to determine its crystal structure, element valence, chemical bond, morphology, and grain size, respectively. Gallium and indium were determined with graphite furnace atomic absorption spectrometry. Effects of experimental parameters, including solution pH and adsorption time, were discussed. The experimental data were studied by employing various isotherm and kinetic models, such as Langmuir/Freundlich and pseudo-first-order/pseudo-second-order models. Furthermore, thermodynamic functions, such as changes of enthalpy (ΔHo), entropy (ΔSo), and Gibbs energy (ΔGo), were obtained.
研究领域:
材料科学
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Sustainable Chemistry & Engineering
·
2023
·
IF 8.4
Henan Zhang,Kewei Jiang,Wantong Li,Qi Liu,Jing Yu,Jiahui Zhu,Yongde Yan,Milin Zhang,Jun Wang
The effective extraction of neutron poison samarium from nuclear waste to prevent reactions with metallic uranium is crucial for the sustainable development of nuclear energy. The electrochemical recovery of samarium on the liquid gallium cathode from the NaCl-2CsCl molten salts has been investigated by a variety of electrochemical techniques, and its electrochemical reduction properties and kinetic parameters have been provided. It was revealed that the reduction reaction on the Mo cathode of Ga(III) to Ga(0) and Sm(III) to Sm(II) is a two-step and one-step reaction process, respectively, and both reactions are reversible. The diffusion coefficients of Ga(III)/Ga(II) and Sm(III)/Sm(II) were identified, and the activation energies were 20.07 and 42.96 kJ mol–1, respectively. Simultaneously, the codeposition mechanism of Ga(III) and Sm(III) on the Mo cathode was systematically investigated, and the potential and types of formation of binary intermetallic compounds were explored. Subsequently, it was determined that there are two main reaction processes for Sm(III) on the liquid Ga cathode, and the deposition potential of Sm becomes more positive due to the formation of the alloy. The exchange current density values of Sm(III)/Sm(Ga) obtained by both linear polarity (LP) and Tafel techniques increased with temperature, meanwhile the charge transfer resistance decreased, as well as the transfer coefficient. In addition, the apparent electrode potential of Sm(III)/Sm(Ga) was also calculated. Based on the electrochemical analysis, the fission element Sm was deposited on the liquid Ga cathode by potentiostatic electrolysis at a suitable potential, and the alloy products were verified by X-ray diffraction, scanning electron microscopy, and energy-dispersive spectroscopy. Ultimately, the highest separation efficiency of Sm on the liquid Ga cathode reached 92.43% according to the analysis of inductively coupled plasma atomic emission spectrometry (ICP-AES) results.
研究领域:
核能工程
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2021
·Vol. 18
·期 8
·2105599
·
IF 13.281
Wuhong Xue,Qitao Jiang,Fakun Wang,Ri He,Ruixue Pang,Huali Yang,Peng Wang,Ruilong Yang,Zhicheng Zhong,Tianyou Zhai,Xiaohong Xu
2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α‑Ga 2 Se 3 can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α‑Ga 2 Se 3 nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.
研究领域:
材料科学
·
凝聚态物理
·
纳米电子学
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功能材料
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半导体物理
✓ 已验证
DOI
高影响因子
Sustainable Materials and Technologies
·
2025
·
IF 9.2
Weinan Dong,Xuehong Qiu,Weisong Zhao,Bao Guo,Kaixi Jiang
In zinc hydrometallurgical plant, neutralizing precipitation and the subsequent dissolution are implemented to enrich scattering metals, Gallium (Ga) and Indium (In), and Cu from zinc leaching solution, facilitating further extraction and separation of Ga/In and others. The formation of jarosite presents both challenges and opportunities for Ga/In extraction, as Ga/In can substitute Fe within the jarosite structure. In this work, the evolution of the Ga/In occurrence state, especially its relationship with jarosite was investigated and the role of Fe/K/Pb was emphasized. Results show that jarosite formation is inevitable at pH 1–2, with K-jarosite forming kinetically faster than Pb-jarosite. By supplying sufficient K, precipitation rates reached 95.7 % for Ga and 98.1 % for In at pH 2 with little Cu/Ge loss. Eventually, a more appropriate and efficient flowsheet for recovery of scattering metals and Cu from zinc leaching solution is recommended, providing a practical framework comprehensive utilization in zinc hydrometallurgy.
研究领域:
冶金学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
SURFACE & COATINGS TECHNOLOGY
·
2024
·
IF 5.3
Guangyin Liu,Yuhui Zhang,Chaofan Ma,Qin Tang,Hanbing Li,Shiqi Chen,Jun Shen
The gallium (Ga) base liquid metal (LM) with high thermal conductivity and deformability is applied widely in thermal management in electrical systems. However, Ga readily reacts with Cu to form intermetallic compounds (IMCs), which can cause failure in electronic devices. Herein, the thermal interface material (TIM) with Ga and diamond is prepared to analyze the reaction behavior of TIM and Cu/Ni-plated Cu under an aging test at 125 °C. The results show that Ga reacts with Cu substrate and forms CuGa 2 bulk. Moreover, Ni coating can inhibit the corrosion of Ga and Cu. However, the as-volcano IMC structures were generated, also. The thermal resistance increased from 2.24 mm 2 ·K·W −1 to 14.47 mm 2 ·K·W −1 from initial time to 200 h. The interfacial corrosion behavior between TIM and Cu substrate is studied by first-principles molecular dynamics simulation. The diffusion coefficient in the z direction of Cu is 0.04 × 10 −5 cm 2 /s. In a word, the work could provide the guidelines for the further design of high-performance corrosion resistance in the region where Ga was used for thermal management on electronic products.
研究领域:
材料科学
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热管理
·
电子器件
✓ 已验证
产品关联
DOI
高影响因子
International Journal of Coal Preparation and Utilization
·
2025
·
IF 2.1
Shengchao Yang,Sheng Dong,Jinpeng Qiao,Chao Kang,Yuqian Zhao,Yanze Wang,Jianrong Liu,Chenlong Duan,Sabereh Nazari,Miao Pan
Aiming at the problems of high quartz content, high ash content and difficult leaching of aluminum and gallium in some coal gangue, NaF-strengthened coal gangue calcination-hydrochloric acid leaching process was adopted, and the occurrence state of gallium in coal gangue was explored. The residue was analyzed by XRD and SEM, and the mechanism of NaF-strengthened coal gangue acid leaching was explored. The results show that the addition of m (NaF): m (coal gangue) = 0.06 can increase the leaching rate of aluminum in coal gangue from 33.72% to 62.03%, and the leaching rate of gallium from 43.17% to 70.15%. NaF as an additive can react with hydrochloric acid to form HF to destroy the coal gangue structure, so that hydrochloric acid can react with metakaolinite inside the quartz accumulation layer, which improves the leaching rate of aluminum and gallium. Finally, the process factors were studied separately to reveal the pattern in response to them, and it was found that the acid leaching reaction was greatly affected by internal diffusion, which provided a reference for the subsequent complexation adsorption of gallium.
研究领域:
冶金工程
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Wei Luo,Peitong Li,Yi Liu,Xiaoyan Yuan,Xu Jiang,Shouwu Guo
In this study, a series of V 2 (Al 1−x Ga x )C microrods are synthesized for the first time in a molten salt system using short carbon fibers as carbon source and sacrificial template. The phase components, structural characteristics, and microwave absorption performance of as-prepared V 2 (Al 1−x Ga x )C microrods are systematically investigated. The calculated lattice distortion degree results confirm that the phase structure, grain boundary density, and internal stress of V 2 (Al 1−x Ga x )C microrods can be effectively modulated by controlling the doping amount of gallium element. The synergistic effects of dielectric loss, magnetic loss, multiple reflection and scattering afford the V 2 (Al 1−x Ga x )C microrods with enhanced microwave absorption intensity and bandwidth. Specifically, V 2 (Al 0.5 Ga 0.5 )C microrod displays a minimum RL value of − 55.62 dB at 12.00 GHz, and the broadest EAB could reach 4.16 GHz with a thickness of 1.75 mm. Compared with the M sites doped MAX phases, A sites doped V 2 (Al 1−x Ga x )C exhibit more excellent electromagnetic energy attenuation capacities.
研究领域:
材料科学
·
电磁学
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Mohammadreza Rostami,Biao Yang,Felix Haag,Francesco Allegretti,Lifeng Chi,Martin Stutzmann,Johannes V. Barth
Gallium nitride (GaN), a wide bandgap semiconductor with absorption and emission in the ultraviolet/visible range, is proposed as an alternative to metallic surfaces for assembling organic molecular structures aiming at optoelectronic applications. However, the formation of a persistent surface oxide layer in air considerably limits the use of GaN for well-defined interfaces. In this work, we have investigated, characterized and processed n-type free-standing c-plane hexagonal wurtzite GaN crystals grown by hydride vapor phase epitaxy and ammonothermal growth methods. Surface cleaning and full removal of the oxide layer on GaN surfaces could be reproducibly achieved via sputtering and annealing cycles, as evidenced by X-ray photoelectron spectroscopy and low-energy electron diffraction. Scanning tunneling microscopy, however, indicated substantial roughening of the GaN surface and the formation of unwanted Ga-rich islands and clusters. Although ammonia (NH 3 ) and bromine (Br) treatments compensated the N/Ga atoms ratio reduced by sputtering, the surface morphology remained rough, exhibiting randomly shaped and distributed hillocks. In addition, we studied the effect of electron bombardment on the surface quality of GaN during NH 3 annealing, on-surface debromination and polymerization of 1,3,5-tris(4-bromophenyl) benzene on GaN, and the removal of Ga atoms by Br atoms during the desorption.
研究领域:
材料科学
·
表面科学
✓ 已验证
DOI
高影响因子
SEPARATION AND PURIFICATION TECHNOLOGY
·
2025
·
IF 9
Yuehua Pan,Yingxue Pang,Hao Fu,Zhenyu Cai,Yuxiang Deng,Zhiwei Huang,Donglou Ren,Yuezhou Wei,Xinpeng Wang
Extracting uranium from uranium waste streams, particularly utilizing zero-carbon emission photochemistry, emerges as a promising and sustainable strategy. Herein, we construct an SS@Ga/PCS composite photocatalyst, consisting of SnS 2 nanosheets as well as a metal − support produced by confining sub-nano Ga δ+ clusters in the hollow porous carbon spheres (PCS). The Ga δ+ clusters are innovatively introduced as active sites with localized hole capability to simultaneously improve visible light response and carrier separation. In-situ characterizations and theoretical calculations reveal that Ga δ+ clusters induced metal-support interaction (MSI) by optimizing the electronic structure in the PCS host; In addition, Ga δ+ clusters act as plasma excitation elements to enhance the visible light responsiveness and carrier separation of SS@Ga/PCS. Ultimately, the inhomogeneous photocatalysis of uranium extraction achieved superior performance as compared to the pure components, corresponding to an encouraging removal rate of 97.87 % and a photo-extraction capacity of up to 1867.30 mg g −1 in 50 mL of uranium waste solution, as well as a wide-concentration window adaptability and excellent catalytic robustness. More significantly, this ingenious nano-confined strategy extends the design ideas of highly dispersed sub-nanometallic cluster co-catalysts and stimulates the study of the availability of abundant reactive active sites combined with monomer strong interactions, which provides a novel insight into the mechanism of photocatalytic uranium extraction.
研究领域:
材料科学
·
环境科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Jiaming Guo,Jing Li,Shanhao Ze,Fei Li,Junchao Wang,Qing Liu,Zhe Hua,Liu Yang,Fei Liu,Baodan Liu
In this study, we introduce a novel perspective that the formation of the atomically ultrathin oxide layer on the surface of liquid alloys is primarily governed by thermodynamic laws and is additionally influenced by the surface tension of the liquid alloys. In this case, we control the competition of Gibbs free energy and surface tension to effectively address the severe segregation problem of Ga 2 O 3 and realize the precise doping of Ga 2 O 3 in the preparation process of two dimensional IGO film through the liquid InGa alloy printing approach. Importantly, the Ga 2 O 3 content in the IGO films can be tailored in the full range and a sub-5 nm ultrathin IGO film transistor is innovatively fabricated. The oxidation law, band gap, Fermi level, field-effect mobility, subthreshold swing, and other properties of IGO films in sub-5 nm scale are systemically investigated in detail. It has been demonstrated that the incorporation of Ga 2 O 3 in the doping process dramatically reduced the device's turn-off current and enhanced its ability to resist ultraviolet interference. This novel doping process opens up a significant opportunity for future developments of atomically ultrathin transparent conducting film.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）