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ACS Applied Nano Materials · 2026 · IF 5.8

Atomic-Scale Surface Formation of 4H–SiC during Chemical Mechanical Polishing through Catalyst-Induced Dual-Pathway Oxidation

Xin Song,Zhigang Dong,Chuanqiang Li,Jiani Guo,Renke Kang,Shang Gao

Achieving appreciable material removal while preserving atomic-scale surface integrity remains challenging in CMP of 4H–SiC, largely because the oxidation pathways governing catalyst-assisted removal are still insufficiently understood. Here, a NaVO3–H2O2–SiO2 slurry was employed as a model catalytic system to clarify how H2O2 activation controls interfacial oxidation and material removal during CMP. Compared with a conventional H2O2–SiO2 slurry, the NaVO3-containing system increased the MRR from 27 to 366 nm h–1 while producing an atomically smooth surface with Sa below 0.1 nm. Combined experiments and first-principles calculations reveal that this enhancement originates from a catalyst-induced dual-pathway oxidation mechanism. In the first pathway, NaVO3 activates H2O2 to form pervanadate species, represented by [VO(O2)(OH)2]−, which directly oxidize surface Si–C bonds and initiate the formation of a SiO2-rich tribolayer. In the second pathway, reduced V(IV) intermediates further react with H2O2 through a Fenton-like route to generate hydroxyl radicals, which sustain tribolayer renewal and deepen surface oxidation. Electrochemical measurements, UV–vis spectroscopy, XPS, cross-sectional TEM, and density functional theory consistently support this mechanism. These results establish a mechanistic framework linking catalytic H2O2 activation, interfacial oxidation, tribolayer evolution, and atomic-scale surface formation in 4H–SiC CMP.

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APPLIED SURFACE SCIENCE · 2021 · IF 6.707

Improved chemical mechanical polishing performance in 4H-SiC substrate by combining novel mixed abrasive slurry and photocatalytic effect

Wantang Wang,Baoguo Zhang,Yunhui Shi,Jiakai Zhou,Ru Wang,Nengyuan Zeng

Silicon carbide (SiC) is challenging to process by chemical mechanical polishing (CMP) given its anomaly mechanical hardness and chemically inert. However, improving the SiC-CMP performance including machining efficiency and surface quality is critical for developing power semiconductor devices with low cost, high efficiency, and high stability. Here, this research aims at combining mixed abrasive slurry (MAS) with photocatalytic effect in the SiC-CMP process, thus enabling an efficient enhanced CMP technology with low-cost and high-performance. Specifically, this paper describes the fabrication process of MAS through a high-energy ball milling method and discusses the polishing performance of the slurry with or without the presence of UV irradiation. By using MAS consisting of Al 2 O 3 and ZrO 2 abrasives, a material removal rate of 694 nm/h and surface roughness (Ra) of 0.489 nm can be obtained under UV irradiation. Additionally, the abrasive morphology, element composition, particle size distribution, Zeta potential, and its chemical effect of the MAS are also analyzed. In particular, a two-step strategy, namely the preparation of MAS and polishing with UV irradiation, is proposed to enhance the SiC-CMP efficiency, and an in-depth analysis of the improvement mechanism for each step is discussed.

CAS / MDL: 9003-04-7

研究领域: 材料科学 · 半导体技术

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Coatings · 2022 ·Vol. 12 ·期 3 ·329 · IF 3.236

Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

Rong Tu,Chengyin Liu,Qingfang Xu,Kai Liu,Qizhong Li,Xian Zhang,Marina L. Kosinova,Takashi Goto,Song Zhang

SiC epitaxial wafers offer enormous potential for a wide range of telecom technologies due to their excellent properties. The experimental process was simulated by software, and the contour of gas flow velocity and raw material mass fraction inside the chamber were obtained. SiC films were epitaxially grown on 4H-SiC single crystalline substrates at different temperatures for one batch, using SiCl4, CH4, and H2as precursors. With increasing temperature, the crystal phase changed from 4H-SiC at 1773 K to a mixture of 4H- and 3C-SiC, and then a mixture of 3C-SiC and graphite at higher than 1923 K. The film was mainly (004)-oriented 4H-SiC and (111)-oriented 3C-SiC.Keywords:SiC film;high-frequency induction-heated halide CVD;crystalline phases distribution;microstructure;orientation

CAS / MDL: 10026-04-7

研究领域: 材料科学 · 半导体物理

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Nano-Micro Letters · 2021 ·Vol. 14 ·期 1 ·1-10 · IF 16.419

Ultra-Stable and Durable Piezoelectric Nanogenerator with All-Weather Service Capability Based on N Doped 4H-SiC Nanohole Arrays

Zhou Linlin,Zhu Laipan,Yang Tao,Hou Xinmei,Du Zhengtao,Cao Sheng,Wang Hailong,Chou Kuo-Chih,Wang Zhong Lin

An ultra-stable all-weather service piezoelectric nanogenerator (PENG) with a wide operating temperature range (-80~80 ℃) and a wide operating relative humidity range (0~100%) is proposed. The PENG based on N doped 4H-SiC exhibits long-term service stability up to 50 days. The short circuit current density of PENG based on N doped 4H-SiC is enhanced significantly.

CAS / MDL: 7664-39-3

研究领域: 材料科学 · 纳米技术 · 能源技术

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APPLIED SURFACE SCIENCE · 2026 · IF 6.6

Characterization and first-principles insights into the oxidation-removal mechanism of Si (0 0 0 1) and C (0 0 0 −1) surface of 4H-SiC in chemical mechanical polishing

Jiani Guo,Xin Song,Yan Su,Yiran Zou,Renke Kang,Shang Gao

Polarity-dependent CMP behavior of 4H-SiC Si-face and C-face is systematically investigated. • The C-face exhibits higher material removal rate and stronger oxidation tendency. • A thicker oxygen-rich reacted layer forms on the C-face during CMP. • Enhanced interfacial charge transfer promotes oxidant–surface interactions on the C-face. • First-principles calculations reveal the origin of polarity-dependent CMP behavior. Chemical mechanical polishing (CMP) of SiC is fundamentally limited by its high hardness and chemical inertness, as well as the pronounced polarity-dependent anisotropy between the Si-face (0 0 0 1) and C-face (0 0 0 −1). In this work, the intrinsic mechanism governing polarity-dependent oxidation and material removal of 4H-SiC is systematically investigated by combining CMP experiments, surface characterization, electrochemical analysis, and first-principles calculations.Under identical polishing conditions, the C-face exhibits a significantly higher material removal rate (1900 nm·h −1 ) and lower surface roughness (0.13 nm) compared to the Si-face (1000 nm·h −1 , 0.65 nm). Electrochemical results reveal faster oxidation kinetics on the C-face, which is further confirmed by the formation of a thicker oxide layer and enhanced oxygen-containing species. DFT calculations demonstrate that the C-face possesses higher surface energy, lower work function, and stronger charge transfer capability, leading to more favorable oxidant adsorption and interfacial reactions. These results reveal that the superior CMP performance of the C-face originates from its intrinsically enhanced electronic activity and oxidation-assisted removal capability. This work establishes a clear structure–property–performance relationship for polarity-dependent CMP of SiC and provides new insights for improving polishing efficiency and achieving wafer-level uniformity. Download: Download high-res image (234KB) Download: Download full-size image

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Atomic-Scale Surface Formation of 4H–SiC during Chemical Mechanical Polishing through Catalyst-Induced Dual-Pathway Oxidation

Improved chemical mechanical polishing performance in 4H-SiC substrate by combining novel mixed abrasive slurry and photocatalytic effect

Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

Ultra-Stable and Durable Piezoelectric Nanogenerator with All-Weather Service Capability Based on N Doped 4H-SiC Nanohole Arrays

Characterization and first-principles insights into the oxidation-removal mechanism of Si (0 0 0 1) and C (0 0 0 −1) surface of 4H-SiC in chemical mechanical polishing