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CZTS
OPTICAL MATERIALS · 2021 · IF 3.08

Effect of Mg doping on Cu2ZnSnS4 solar cells prepared by DMF-based solution method

Yunpeng Wang,Ruiting Hao,Jie Guo,Xiaoming Li,Shuiliu Fang,Huimin Liu,Shuaihui Sun

In this paper, magnesium was successfully introduced into CZTS using the DMF-based solution method, and CZMTS solar cell was prepared. The effects of Mg doping on the morphology, crystal structure, and electronic properties of the CZTS absorber were investigated in detail. The crystal structure of the CZMTS absorber and the chemical valence states of the other elements (Cu, Zn, Sn, and S) were not changed as shown by XRD , Raman, and XPS analyses. The results show that Mg doping can improve the electronic properties and microstructure of CZTS absorbers, thus enhancing the PCE from 2.91% to 4.10%. This performance enhancement is associated with good crystal quality, reduced cation-disordering defects, and high external quantum efficiency at the longwave region caused less recombination and open circuit voltage loss. Therefore, Mg doping has a positive effect on improving the performance of CZTS solar cells.

研究领域: 材料科学 · 能源科学
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CHEMICAL ENGINEERING JOURNAL · 2018 · IF 6.735

Realizing zinc-doping of CdS buffer layer via partial electrolyte treatment to improve the efficiency of Cu2ZnSnS4 solar cells

Youchen Gu,Chen Ye,Xuewen Yin,Jianhua Han,Yu zhou,Heping Shen,Jianbao Li,Xiaojing Hao,Hong Lin

Cadmium sulfide (CdS) is the most widely used buffer material for a variety of thin-film solar cells including Cu 2 ZnSnS 4 . However, reports have shown that CdS film obtained by chemical bath deposition (CBD) is not the ideal buffer layer for pure sulfide CZTS solar cell. Zinc doping is a viable approach to modifying the CdS buffer film, but the present methods are far from satisfactory. Here, we innovatively developed an effective way of Zinc doping using partial electrolyte (PE) treatment, resulting in state-of-the-art buffer layer for solar cells based on high-surface-waviness CZTS light absorber. Our study shows that this Zn PE-treated CdS film improved the properties including coverage, full-range light transmittance and conduction band alignment with CZTS. Ultimately, the resultant modified CdS film boosted the open-circuit voltage of our devices by more than 100 mV, yielding power conversion efficiency (PCE) of 3.30%. We note that this is the highest efficiency that has been reported for all solution-processed CZTS solar cells.

研究领域: 材料科学 · 能源技术
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Energy Storage Materials · 2016 · IF 0

Cu2ZnSnS4/graphene nanocomposites for ultrafast, long life all-solid-state lithium batteries using lithium metal anode

Hongli Wan,Gang Peng,Xiayin Yao,Jing Yang,Ping Cui,Xiaoxiong Xu

A graphene-based nanocomposite Cu 2 ZnSnS 4 /graphene (CZTS/graphene) is employed as a promising active material for all-solid-state lithium batteries for the first time. Meantime, lithium metal is used as an anode in order to maximize the energy density of the batteries with the sulfide electrolytes. The solid electrolyte bilayer, i.e. Li 10 GeP 2 S 12 and 70% Li 2 S–29% P 2 S 5 –1% P 2 O 5 , is designed, where 70% Li 2 S–29% P 2 S 5 –1% P 2 O 5 is used as the interface with lithium metal for the purpose of avoiding the reduction reaction with Li 10 GeP 2 S 12 . CZTS/graphene nanocomposites, with the CZTS nanoparticles uniformly anchored on the graphene nanosheets , are prepared by a simple hydrothermal reaction . The unique structure endows significantly reduced lithium ion diffusion lengths in CZTS nanoparticles as well as intimate contact between CZTS nanoparticles and sulfide electrolytes, leading to favorable lithium ionic and electronic conduction pathways. The results reveal that the CZTS/graphene-21 in all-solid-state lithium batteries shows the discharge capacity of 645.4   mA   h   g −1 after 50 cycles at 50   mA   g −1 , corresponding to a very high energy density of 346.2   W   h   kg −1 . Even at high current densities of 100 and 1000   mA   g −1 , the CZTS/graphene-21 can still deliver the discharge specific capacities as high as 544.6 and 233.9   mA   h   g −1 after 100 and 300 cycles, respectively.

研究领域: 材料科学 · 能源存储与转换
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MATERIALS TECHNOLOGY · 2015 · IF 1.227

Fabrication of low cost kesterite Cu2ZnSnS4 (CZTS) thin films as counter-electrode for dye sensitised solar cells (DSSCs)

S. Chen,J. Tao,H. Tao,Y. Shen,L. Zhu,J. Jiang,X. Zeng,T. Wang

Cu2ZnSnS4 (CZTS) thin films were prepared by a low cost and large scale slurry sulphurisation process. The structure and morphology of the CZTS powders and films were characterised by X-ray diffraction, transmission electron microscopy and field emission–scanning electron microscopy respectively. The thermal behaviour of the CZTS slurry mixture was analysed by thermogravimetry coupled with differential scanning calorimetry. The absorption spectra of the thin film were characterised using an ultraviolet–visible–near infrared spectrophotometer. The effects of the sulphurisation temperature and soaking time on the structural, morphological, compositional and optical properties of the samples were investigated in detail. The results indicated that the crystals grew during sulphurisation, leading to some pores and cracks in the films, and the film possessed the optical band gap values between 1.45 and 1.48 eV. Under one sun (100 mW cm− 2) illumination, the dye sensitised solar cells with the CZTS counter-electrode (CE) showed comparable photovoltaic conversion efficiency (Eff = 3.141%) to that with a Pt CE (Eff = 2.761%). It is indicated that the as prepared CZTS films had potential for developing low cost and high efficient CE.

CAS / MDL: 7704-34-9
研究领域: 材料科学 · 能源技术
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Advanced Energy Materials · 2026 · IF 25.5

Chemical Bath Solution In-Addition Enabled Grain Boundary and Heterojunction Interface Defects Mitigation Achieving 12.1% Efficiency CZTS Solar Cell

Xinyu Li,Yuqin Zhong,Hongkun Liu,Chengfeng Ma,Chunxu Xiang,Yize Li,Sifan Zhou,Na Zhao,Weibo Yan,Shaoying Wang,Hao Xin

The performance of wide bandgap Cu 2 ZnSnS 4 (CZTS) thin film solar cells is limited by serious recombination due to high concentration of defects and “cliff-like” conduction band offset (CBO) at the heterojunction. The state-of-the-art strategies tackling these issues are post heat treatment and alternative buffer layer. Here, we address these issues by adding InCl 3 to the chemical bath deposition solution (CBD-In-addition) for CdS buffer layer. At early CBD stage, In 3+ sufficiently substitute Zn 2+ near CZTS absorber surface and along the grain boundaries (GBs), enabled by smaller size than Cd 2+ and no complexation with NH 3 , resulting in highly conductive GBs with beneficial upward band bending. Further, the incorporation of In 3+ into CdS ((Cd,In)S) improved buffer layer n-type conductivity, alleviated heterojunction lattice mismatch and enlarged buffer layer bandgap, resulting in a coherent CZTS/(Cd,In)S interface, a “spike-like” CBO, and a more transparent buffer layer. These effects lead to 12.14% efficiency CZTS solar cell, improved by 31% compared to reference device (9.29%). This is the highest efficiency sulfide CZTS solar cell with chemical bath deposited buffer layer without post heat-treatment. The simple and synergetic defects mitigation strategy is expected to advance other wide bandgap chalcogenide thin film solar cells.

CAS / MDL: 22519-64-8 62-56-6
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ACS Sustainable Chemistry & Engineering · 2015 · IF 4.642

In-Situ and Green Method To Prepare Pt-Free Cu2ZnSnS4 (CZTS) Counter Electrodes for Efficient and Low Cost Dye-Sensitized Solar Cells

Shanlong Chen,Aichun Xu,Jie Tao,Haijun Tao,Yizhou Shen,Lumin Zhu,Jiajia Jiang,Tao Wang,Lei Pan

A novel in-situ and green method with the combination of TiCl4 pretreatment and solvothermal growth was proposed to prepare the Pt-free Cu2ZnSnS4 (CZTS) counter electrodes (CEs) on FTO substrate. It was found that TiCl4 pretreatment toward the substrates was crucial to a high quality and high efficiency CZTS film, which consists of nanosheet and nanoparticle structure. The highly crystallized nanosheets were assembled from kesterite structure CZTS nanocrystals, with an average diameter of 10–30 nm. The detailed morphology, crystal structure, and composition of the CZTS nanostructures were characterized by SEM, TEM, SAED, XRD, Raman, and EDS analysis, respectively. Electrocatalytic abilities of the films toward I–/I3– were verified through cyclic voltammograms (CV), electrochemical impedance spectroscopy (EIS), and Tafel polarization measurements. A maximum power conversion efficiency of 5.65% was achieved for a cell with CZTS 3, under 100 mW/cm2, which was higher than that of a cell with a commercial Pt counter electrode (4.96%). This high efficiency was mainly attributed to the good bonding strength between CZTS films and FTO substrate (RS = 4.41 Ω cm2), and higher electron-transfer process at the electrolyte/CE interface (high JSC), along with superior electrochemical catalytic ability (RCt = 2.40 Ω cm2). The in-situ prepared CZTS CEs are proven to be suitable for high efficiency Pt-free dye-sensitized solar cells (DSSCs), leading to significantly decrease of the cell cost and simplification of preparation process.

研究领域: 材料科学 · 能源科学 · 纳米技术
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Small · 2024 ·Vol. 20 ·期 48 ·2405528 · IF 13

Bidirectional Inhibiting Interfacial Ion Migration in the Inorganic Hole Transport Layer for Perovskite Light-Emitting Diodes

Lunyao Pan,Xiankan Zeng,Yuanxiao Qu,Maolin Mu,Shiyu Yang,Yongjian Chen,Chenglong Li,Linzhu Dai,Li Tao,Hongqiang Xin,Wen Li,Weiqing Yang

Cu 2 ZnSnS 4 (CZTS) is strong candidate for hole transport in perovskite light emitting diodes (PeLEDs) due to their cost-effectiveness, deep highest occupied molecular orbital (HOMO), and high hole mobility. However, its inherent polymetallic ions usually deteriorate the quality of the perovskite emission layer (EML) affecting device performance. In this study, a bidirectional anchoring strategy is proposed by adding 15-crown-5 ether (15C5) into CZTS hole transport layer (HTL) to suppress the reaction between HTL and EML. The 15C5 molecule interacts with Cu + , Zn 2+ and Sn 2+ cations forming host–guest complexes to impede their migration, which is elucidated by density functional theory calculations. Additionally, 15C5 can neutralize lead (Pb) defects by the abundant oxygen (O) and high electronegative cavities to reduce the nonradiative recombination of FAPbBr 3 film. This bidirectional anchoring strategy effectively improves hole charge transport efficiency and suppresses nonradiative recombination at the HTL/EML interface. As a result, the optimized PeLEDs present a 3.5 times peak external quantum efficiency (EQE) from 3.12% to 11.08% and the maximum luminance ( L max ) increased from 24495 to 50584 cd m −2 . These findings offer innovative insights into addressing the metal ion migration issue commonly observed in inorganic HTLs.

研究领域: 材料科学 · 光电子学 · 半导体物理
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