Journal of Energy Chemistry
·
2021
·
IF 9.676
Yueqing Deng,Zhengji Zhou,Xin Zhang,Lei Cao,Wenhui Zhou,Dongxing Kou,Yafang Qi,Shengjie Yuan,Zhi Zheng,Sixin Wu
The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage ( V oc ) deficit. Recently, Sn Zn deep point defect and associative defect cluster have been recognized as the main culprit for the V oc losses. Therefore, manipulating the deep-level donor of Sn Zn antisite defects is crucial for breaking through the bottleneck of present Cu 2 ZnSn(S,Se) 4 (CZTSSe) photovoltaic technology. In this study, the Sn Zn deep traps in CZTSSe absorber layer are suppressed by incorporation of Ge. The energy levels and concentration of Sn Zn defects measured by deep-level transient spectroscopy (DLTS) decrease significantly. In addition, the grain growth of CZTSSe films is also promoted due to Ge implantation, yielding the high quality absorber layer. Consequently, the efficiency of CZTSSe solar cells increases from 9.15% to 11.48%, largely attributed to the 41 mV V oc increment.
研究领域:
材料科学
·
光伏技术
·
太阳能
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DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Yuting Sun,Bin Yao,Yuhong Jiang,Yongfeng Li,Xiaobo Du,Zhanhui Ding,Jiayong Zhang,Chunkai Wang,Ding Ma,Mengge Li,Yan Zhu,Xiaofei Sun,Ning Ding,Liyuan Shi
It is well known that the improvement of crystal quality and photoelectric properties of Cu2ZnSn(S,Se)4 (CZTSSe) is one of the key issues in enhancing power conversion efficiency (PCE). To resolve this problem, we selected Li2CO3 as a Li source to prepare Li-doped CZTSSe by annealing Li-doped Cu2ZnSnS4 (CZTS) precursor films in air, followed by selenization (CZTSSe-Li-A). It is interesting that the air annealing leads to the incorporation of Li and O into CZTSSe in the form of Li-O pairs, which improves the crystal quality and absorption coefficient (α) of CZTSSe-Li-A and decreases its hole concentration and resistivity compared with Li-doped CZTSSe prepared using Li-doped CZTS that is not annealed in air (CZTSSe-Li). By optimizing Li doping concentration, annealing temperature and time, the highest PCE of CZTSSe-Li-A solar cell without MgF anti-reflection layer reaches 11.13%, which is larger than the highest PCE of CZTSSe-Li solar cell (10.21%). Quantitative analysis indicates that the increased PCE of CZTSSe-Li-A solar cell compared to CZTSSe-Li solar cell is mainly attributed to the decrease in reverse saturation current density (J0) and series resistance (Rs) caused by thermal effect of the air annealing, followed by an increase in photogeneration density (JL) and shunt resistance (Rsh). The decreased J0 is due to a reduction in interfacial defect density, increased JL is due to increase in α and depletion region width, and decreased Rs and increased Rsh are due to improve crystal quality. This work offers a route for the improvement of PCE of CZTSSe solar cells.
研究领域:
材料科学
·
光伏技术
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薄膜技术
·
固体物理
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产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2024
·
IF 14
Shicheng Deng,Songfan Wang,Yuanyuan Wang,Qian Xiao,Yuena Meng,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Zhi Zheng,Sixin Wu
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells suffer from severe carrier recombination, limiting the photovoltaic performance. Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes. Herein, oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects. With optimized oxygen incorporation conditions, the carrier separation and collection behavior at the front interface of the device is improved. In particular, it is found that oxygen incorporated absorber exhibits increased band bending, larger depletion region width, and suppressed absorber defects. These indicate the dynamic factors for carrier separation become stronger. Meanwhile, the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport. As a consequence, the champion efficiency of CZTSSe solar cells has been improved from 9.74% to 12.04% with significantly improved open-circuit voltage after optimized air-annealing condition. This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.
研究领域:
材料科学
·
太阳能
·
半导体物理
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 6
·066108
·
IF 1.321
Qing Yu,Jiangjian Shi,Pengpeng Zhang,Linbao Guo,Xue Min,Yanhong Luo,Huijue Wu,Dongmei Li,Qingbo Meng
A study of the self-healing phenomenon of Cu2ZnSn(S, Se)4 (CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage (Voc) and fill factor (FF). In addition, up to 10.45% power conversion efficiency (PCE) has been achieved. No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction (XRD) pattern, Raman spectrum, ultraviolet-visible (UV-Vis), and TOF-SIMS. Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Qing Zhou,Meinan Yan,Yuzhou Sun,Yujiao Ma,Zihan Zhang,Haoyu Xu,Xiaoyun Teng,Chao Gao,Wei Yu
In this paper, we reported a novel precursor solution for the preparation of Cu 2 ZnSn(S,Se) 4 (CZTSSe) film. Large-grain monolayer CZTSSe film can be obtained by using the precursor solution. The influence of selenization temperature on the properties of CZTSSe films and solar cells were investigated. We found the monolayer CZTSSe film can be prepared with the selenization temperature as low as 510 °C. While an increased selenization temperature was used, the size of the crystalline grains in CZTSSe film increased significantly, but the decomposition of CZTSSe material got more serious. As the increase of the selenization temperature, increased short-circuit current (J SC ) can be achieved for the fabricated solar cell, which could be caused by the improved crystallinity of CZTSSe layer and the enlarged depletion width of solar cell (as much as 391 nm). On the other hand, the open-circuit voltage (V OC) decreased as the increase of selenization temperature, which may relate with the decomposition of CZTSSe material. The best solar cell achieved the efficiency of 11.4% (active area), which was based on CZTSSe film with the selenization temperature of 510 °C.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2020
·Vol. 49
·期 10
·6208-6213
·
IF 1.774
Chen Ruilan,Cui Guonan,Yang Yanchun,Li Yuemin,Alata H.,Tian Xiao,Tegus O.
Abandoning the traditional deposition of as-prepared Cu 2 ZnSnS 4 (CZTS) thin films in a glove box, a modified thiol-based solution system suitable for deposition in air is described to further reduce device production costs. In this modified approach, metal salts and thiourea are used as the starting materials and are dissolved in a mixed solution of thioglycolic acid and 2-methoxyethanol, forming a homogeneous precursor solution. The as-deposited CZTS thin films are obtained by spin-coating the precursor solution in air, followed by the selenization process to form large-grained Cu 2 ZnSn(S,Se) 4 thin films. Combining the microstructural results with compositional analyses, the optimal selenization conditions for the Cu 2 ZnSn(S,Se) 4 absorber layer were found to be 540°C and 10 min.
研究领域:
材料科学
·
薄膜制备
·
光电材料
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能源材料
·
半导体工艺
✓ 已验证
DOI
高影响因子
Solar RRL
·
2021
·Vol. 6
·期 1
·2100778
·
IF 8.582
Hongling Guo,Rutao Meng,Long Hu,Chun-Ho Lin,Yali Sun,Yue Liu,Jianyu Wu,Zhan Shen,Dewei Chu,Gang Wang,Li Wu,Guangxing Liang,Shifu Xiong,Fangfang Liu,Yi Zhang,Tom Wu
In spite of the merits such as Earth abundance and high performance, Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells suffer from unfavorable Sn Zn antisite defects and complexes, which act as nonradiative recombination centers and deteriorate the open-circuit voltage ( V OC ). Therefore, the management of Sn composition is the prerequisite for achieving high-efficiency CZTSSe photovoltaic devices. At present, the Sn-related composition and defect modifications at different selenization pressures remain unclear, which restrain the development of efficient kesterite solar cells. Herein, a facile yet effective strategy to accurately adjust the Sn content in CZTSSe films by simply optimizing the selenization pressure is demonstrated. Compared with the widely used atmospheric pressure, it is unveiled that the appropriate negative pressure (0.7 atm) can tailor the optimal Sn content in the absorber layer, influencing both the Sn-related defects and the microstructures. In contrast, a lower (0.4 atm) and a higher (1.3 atm) selenization pressure results in undesirable deep Cu Sn defects and a Sn(S,Se) 2 secondary phase, respectively. A champion device fabricated at this optimal selenization pressure (0.7 atm) exhibits a power conversion efficiency of 11.32% with a V OC of 0.496 V. This study paves the path toward highly efficient kesterite solar cells by tailoring the composition-dependent defects.
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2016
·
IF 7.145
Yanchun Yang,Xiaojiao Kang,Lijian Huang,Daocheng Pan
Alkali metal doping plays a crucial role in fabricating high-performance Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this study, we report the first experimental observation and characterizations of the alloyed LixCu2–xZnSn(S,Se)4 thin films. It is found that Cu+ ions in Cu2ZnSn(S,Se)4 thin films can be substituted with Li+ ions, forming homogeneous LixCu2–xZnSn(S,Se)4 (0 ≤ x ≤ 0.29) alloyed thin films. Consequently, the band gap, conduction band minimum, and valence band maximum of LixCu2–xZnSn(S,Se)4 thin films are profoundly affected by Li/Cu ratios. The band alignment at the LixCu2–xZnSn(S,Se)4/CdS interface can be tuned by changing the Li/Cu ratio. We found that the photovoltaic parameters of the LixCu2–xZnSn(S,Se)4 solar cell devices are strongly influenced by the Li/Cu ratios. Besides, the lattice constant, carrier concentration, and crystal growth of LixCu2–xZnSn(S,Se)4 thin films were studied in detail.
研究领域:
材料科学
·
太阳能技术
·
半导体物理
✓ 已验证
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2021
·
IF 4.094
Jingying Zhang,Yanchun Yang,Guonan Cui,H. Alata,Yiming Wang,Chengjun Zhu
Substitution of Zn 2+ ionic by Co 2+ ionic is known to suppress the cation disorder of Cu 2 ZnSn(S,Se) 4 thin films , which is helpful to obtain the excellent Cu 2 ZnSn(S,Se) 4 solar cell devices. In our work, the extra trace Co incorporation was added in the solution without affecting the compositions of other elements (i.e. Cu, Zn, and Sn) to enhance the electrical properties of Cu 2 ZnSn(S,Se) 4 thin films . And Co incorporation does not enter into the lattice nor be found in the selenized films after taking effect, but increases the crystallinity , compactness, carrier concentration, and electrical properties of Cu 2 ZnSn(S,Se) 4 thin films samples. By tuning the doping ratios of Co 2+ ionic, the surface roughness of the selenized films can be decreased from 110.2 nm (0 mol %) to 68.90 nm (5 mol %). As 1 mol % of Co 2+ ionic is doped, the carrier concentration of films can be also improved to 4.35 × 10 17 cm −3 from 2.63 × 10 16 cm −3 , and average surface current of films applied 1 V AC voltage can be increased from 2.426 nA to 4.454 nA. The enhanced properties of Co-incorporated films brings hope for the excellent performance of Cu 2 ZnSn(S,Se) 4 solar cells.
研究领域:
材料科学
·
光伏技术
·
半导体薄膜
·
可再生能源
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 31
·10660-10672
·
IF 6.4
Yonggang Zhao,Congyan Xu,Zhineng Zhou,Yufei Chen,Ying Zhang,Lang Wu,Xu Su,Xinghuan Hu,Shurong Wang
High-temperature sulfoselenization is essential in producing Cu2ZnSn (S,Se)4 (CZTSSe) thin-film solar cells. At high temperature, the Cu2ZnSn(S,Se)4 phase-transition speed is fast, which causes grain transition to mature quickly, followed by grain decomposition. Although grain surfaces are relatively flat at low temperatures, the small grain and more grain boundaries lead to low efficiency. In this study, a dynamic-temperature sulfoselenization process was adopted to utilize both the advantages of high and low temperatures comprehensively. Different constant- and variable-temperature sulfoselenization processes were developed for annealing Cu–Zn–Sn–S precursor films prepared in the air using dimethyl sulfoxide (DMSO) and 2-methoxyethanol (MOE) dual solvent systems. As a result, CZTSSe films with a flat, holeless, and dense surface, and a single-layer large grain penetrating the whole cross-section were fabricated by a proper variable-temperature sulfoselenization process. Finally, 11.11% total-area power conversion efficiency (12.22% active area efficiency) of CZTSSe solar cells (without antireflection coating) based on the variable-temperature sulfoselenization process was achieved successfully. Compared with the highest efficiency of 9.10% of CZTSSe film solar cells fabricated from the stable-temperature sulfoselenization annealing process, the efficiency was improved by 22%. The variable-temperature annealing processes in this study can also be applied to the preparation of other multi-element thin-film semiconductor materials.
研究领域:
材料科学
·
光伏技术
·
半导体薄膜
·
可再生能源
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2022
·
IF 7.305
Xiatong Qin,Bin Xu,Jianjun Lin,Jiaqi Chen,Hanyu Tong,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
Electrodeposition is a promising method to fabricate Cu 2 ZnSn(S,Se) 4 (i.e., CZTSSe) absorber layer thanks to its many advantages such as low-cost and large-scale. However, the secondary phases and intrinsic defects in electrodeposited CZTSSe solar cells inevitably limit the photoelectric performance. Herein, two different kind of precursor films (binary-ternary selenide vs. quaternary selenide) are deliberately fabricated and the effect of these precursors on the secondary phases and intrinsic defects of CZTSSe absorber layer are investigated comprehensively. The absorber layer obtained from binary-ternary selenide precursor has a small amount of ZnSe secondary phases and Cu Sn deep defects , whereas that obtained from the quaternary selenide precursor exhibits the favorable V Cu shallow defects, which is beneficial to the efficiency improvement in CZTSSe. Based on the quaternary selenide precursor film, the CZTSSe solar cell with 10.03% total area efficiency (the active area efficiency is 10.9%) was obtained. This is the highest efficiency of CZTSSe solar cells prepared by the electrodeposition method.
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Lijian Huang,Song Wei,Daocheng Pan
Large-grained Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers are highly desirable for high-performance CZTSSe thin film solar cells. However, solution-deposited CZTSSe thin films usually consist of a large-grained top layer and a smaller-grained bottom layer. In this work, we adopt a phase-separation strategy to promote the crystal growth of the CZTSSe thin film. By choosing ZnCl2, SnCl2, CuCl (instead of CuCl2), and thiourea as the starting materials, a Cu2S/SnS/ZnS hybrid precursor thin film can be prepared, the composition of which has been testified by X-ray diffraction, X-ray photoelectron spectroscopy, Raman, and scanning electron microscopy-energy-dispersive spectrometry characterization. Owing to the volume expansion caused by Se incorporation and the high migration abilities of Cu(I) and Sn(II) ions during selenization, large-grained and compact CZTSSe films with a thickness up to 5 μm can be obtained. The corresponding thin film solar cell devices have achieved active power conversion efficiencies above 10% (8.78% for total area), much higher than those of CuCl2-based CZTSSe devices in our lab.
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产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）