JOURNAL OF MATERIALS SCIENCE
·
2022
·Vol. 57
·期 7
·4643-4651
·
IF 4.682
Bo Lin,Li Fujin,Hou Yangbo,Wang Lei,Wang Xinglong,Zhang Ruipeng,Zuo Min,Ma Yanzhen,Zhao Degang
The ternary Cu 3 SbSe 4 thermoelectric material with diamond-like structure exhibit good electrical properties in the middle-temperature region. Forming co-alloying solid solutions has long been considered as an effective strategy for decoupling electrical conductivity and Seebeck coefficient. In this study, the Cu 3- x Ag x Sb 1- y Te y Se 4 ( x = 0–0.1; y = 0–0.05) materials were fabricated by melting-ball milling-hot pressing process. The influences of configurational entropy on the microstructure and thermoelectric properties of Cu 3 SbSe 4 were evaluated. It was found that the electrical conductivity of Cu 2.9 Ag 0.1 Sb 0.95 Te 0.05 Se 4 was about 200% higher than that of pure sample due to the slightly configurational entropy tuning. Moreover, multiscale free path phonons of Cu 2.9 Ag 0.1 Sb 0.95 Te 0.05 Se 4 can be greatly scattered and the lattice thermal conductivity decreased from 3.0 to 2.1 Wm −1 K −1 at 300 K via lattice-distortion effect. The maximum zT value of 0.84 was obtained at 650 K for the Cu 2.9 Ag 0.1 Sb 0.95 Te 0.05 Se 4 sample. These results displayed the multiple effects on thermoelectric transport during the formation of co-alloying solid solutions. Graphical abstract
研究领域:
材料科学
·
热电学
·
固体化学
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Honglei Wang,Zixuan Tian,Zhuang Fu,Lijun Zhao,Lei Wang,Songtao Dong,Hongbo Ju
Cu 3 SbSe 4 has garnered significant attention due to its low thermal conductivity, complex elemental composition, and economic feasibility. In this study, Cu 2.85 Ag 0.15 Sb 0.985−x Bi 0.015 Pb x Se 4 (x=0, 0.05, 0.10, and 0.15) samples were synthesized using a system of vacuum melting combined with cold isostatic pressing techniques. The impact of Pb doping on the thermoelectric properties of Cu 2.85 Ag 0.15 Sb 0.985 Bi 0.015 Se 4 was comprehensively investigated. The experimental results revealed a notable increase in carrier concentration, from 2.95×10 18 cm −3 to 8.31×10 19 cm −3 , leading to a substantial improvement on the electrical conductivity. At 573 K, the electrical conductivity of the Cu 2.85 Ag 0.15 Sb 0.835 Bi 0.015 Pb 0.15 Se 4 reached 234.26 S cm −1 , while the power factor of the Cu 2.85 Ag 0.15 Sb 0.885 Bi 0.015 Pb 0.10 Se 4 achieved a maximum value of 883.5 μW m −1 K −2 . The incorporation of Pb induced lattice defects, which modified the phonon mean free path and enhanced phonon scattering. As a result, the increased phonon scattering contributed to a reduction in lattice thermal conductivity within the Cu 2.85 Ag 0.15 Sb 0.985 Bi 0.015 Se 4 sample. The thermoelectric figure of merit (ZT) for the Cu 2.85 Ag 0.15 Sb 0.935 Bi 0.015 Pb 0.05 Se 4 reached a peak value of approximately 0.74 at 573 K, marking a 157.4% improvement compared to that of Cu 2.85 Ag 0.15 Sb 0.985 Bi 0.015 Se 4 (∼0.47). This study demonstrates that multi-element doping is a highly effective strategy for optimizing the thermoelectric properties of the Cu 3 SbSe 4 system.
研究领域:
材料科学
·
热电材料研究
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产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2025
·Vol. 36
·期 22
·1-11
·
IF 2.8
Mi Xiaona,Xu Jian,Yu Mingjie,Gao Yiming,Zhang Dewei,Zhang Qinfang
Ternary copper-based Cu 3 SbSe 4 compound has emerged as a promising thermoelectric material. However, its practical application is limited by relatively low thermoelectric performance, primarily due to inferior electrical properties. In this work, the Cu 3 SbSe 4 -based composites with incorporated 2D MXenes ( i.e. , Ti 3 C 2 T x ) were synthesized by combining mechanical alloying with spark plasma sintering technique. The introduction of 2D Ti 3 C 2 T x nanosheets significantly enhanced the Seebeck coefficient, which is ascribed to the energy-dependent carrier scattering. Resultantly, an optimized PF ~ 1.1 mWm −1 K −2 can be realized in the bulk composite with x = 1.5. All composite samples exhibited low thermal conductivity in high temperature, attributed to enhanced interfacial phonon scattering. As a result, the best ZT value of 0.59 at 623 K is obtained for the bulk Cu 3 Sb 0.98 Sn 0.02 Se 4 /1.5 vol % Ti 3 C 2 T x composite, which increases by 31% compared with that of the matrix. This study demonstrates that incorporation of 2D MXenes into ternary copper-based compounds is an effective strategy to enhance their TE performance.
研究领域:
材料科学
·
凝聚态物理
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功能材料
·
能源材料
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产品关联
DOI
高影响因子
Results in Physics
·
2021
·
IF 4.476
Lin Bo,Yongpeng Wang,Wenying Wang,Lei Wang,Fujin Li,Min Zuo,Yanzhen Ma,Degang Zhao
The ternary Cu 3 SbSe 4 thermoelectric material with diamond-like structure exhibit good thermoelectric performance in the middle temperature region. In this study, the Cu 3− x Ni x SbSe 4 ( x = 0–0.03) materials were fabricated by melting-ball milling-hot pressing process. The influences of grain size and compositional gradient on the microstructure and thermoelectric properties of Cu 3− x Ni x SbSe 4 were evaluated. It is found that the electrical conductivity of Cu 2.97 Ni 0.03 SbSe 4 was about 33% higher than that of Cu 3 SbSe 4 sample, and the lattice thermal conductivity was reduced from 3.3 Wm −1 K −1 to 2.4 Wm −1 K −1 at room temperature due to the grain refinement and more V Se defects. The maximum zT value for the Cu 2.97 Ni 0.03 SbSe 4 sample was 0.62 at 650 K.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电材料
·
半导体材料
✓ 已验证
DOI
高影响因子
Energy & Environmental Materials
·
2025
·
IF 14.1
Wenying Wang,Xinglong Wang,Lin Bo,Wenying Zhou,Changcun Li,Zheng Zhang,Futian Liu,Degang Zhao
Cu 3 SbSe 4 -based compounds have attracted considerable potential in the realm of thermoelectric research owing to their distinctive physical properties and environmental compatibility. The material was efficiently synthesized via rapid microwave melting processing, aiming to improve its viability as a cost-effective thermoelectric option for practical applications. This study emphasizes the stepwise optimization of thermoelectric transport properties. The foremost effort involved improving transport electrical transport properties through the co-alloying of Sn and Te to determine optimal compositional configurations for superior thermoelectric performance. Iterative refinement enabled increased hole carrier concentration, which effectively addressed the intrinsic limitation of low electrical conductivity, thereby increasing the power factor by three times. Based on this foundation, a hierarchical multiscale structure was developed through the incorporation of AgCuTe as a secondary phase, which enhanced phonon scattering across multiple scales and consequently reduced thermal conductivity by 65% relative to pristine samples. The synergistic optimization of electronic and thermal transport properties culminated in a significant improvement in zT . The optimized Cu 3 SbSe 4 –1.0 wt% (Sn, Te)-2.5 wt% AgCuTe composite demonstrated a peak zT of 1.21 at 650 K and an average zT avg of 0.52 across the range of 300–650 K, contributing to a deeper understanding of the transport properties for chalcogenide-based thermoelectric compounds.
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产品关联
DOI
高影响因子
RARE METALS
·
2026
·Vol. 45
·期 5
·e70295
·
IF 12.1
Wenying Wang,Didi Huo,Xinglong Wang,Xiaojie Ji,Lin Bo,Xingshuo Liu,Wenying Zhou,Zheng Zhang,Degang Zhao
en This link goes to a English section zh This link goes to a Chinese section Harnessing the potential of thermoelectric technology to convert waste heat into electricity, this study sought to enhance overall energy utilization efficiency and contribute to sustainable development through the advancement of environmentally friendly direct-conversion materials. Focusing on Cu 3 SbSe 4 -based diamond-like compounds, which are limited by low carrier concentration and high lattice thermal conductivity, we proposed and implemented a synergistic optimization strategy centered on multiscale microstructure engineering. Through employing ternary co-alloying with Ge, Te, and CuAlSe 2 , a multiscale heterogeneous microstructure comprising point defects, nano-precipitates, dislocations, and phase boundaries was successfully constructed, which not only enhanced the carrier concentration and optimized the band structure but also enabled full-spectrum phonon scattering, which dramatically suppressed the lattice thermal conductivity to near its amorphous limit while preserving a comparatively high power factor. Consequently, the optimized material attained a zT of ∼1.38 at 650 K and an average zT avg of ∼0.61, accompanied by significantly enhanced mechanical robustness and thermal stability, thereby demonstrating its promising applicability in mid-temperature thermoelectric power generation. This work ultimately established an effective paradigm for the synergistic regulation of electrical and thermal transport properties in Cu 3 SbSe 4 -based systems via multicomponent alloying. 摘要 en This link goes to a English section zh This link goes to a Chinese section 利用热电技术将废热转化为电能的潜力,这项研究试图通过推进环保的直接转换材料来提高整体能源利用效率,并为可持续发展做出贡献。针对低载流子浓度和高晶格热导率限制的Cu 3 SbSe 4 基类金刚石化合物,我们提出并实施了一种以多尺度微观结构工程为中心的协同优化策略。通过Ge、Te和CuAlSe 2 进行三元共合金化,成功构建了一个由点缺陷、纳米沉淀物、位错和相边界组成的多尺度非均匀结构。不仅提高了载体浓度,细化了电子能带结构,还诱导了全谱声子散射,在保持相对较高的功率因数的同时,大大抑制了晶格热导率, 接近其非晶极限。因此,优化后的材料在650 K下的 zT 约为1.38,平均 zT avg 约为0.61,同时显著提高了机械可靠性和热稳定性。从而证明了其在中温热电发电中的广阔应用前景。这项工作最终为通过多组分合金化协同调节Cu 3 SbSe 4 基体系的电和热输运性能建立了一个有效的范式。
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2026
·
IF 6
Xin Sun,Honglei Wang,Lei Wang,Songtao Dong,Hongbo Ju
Cu 3 SbSe 4 is a promising thermoelectric material due to its intrinsically low lattice thermal conductivity and non-toxic, earth-abundant composition; however, its inherently low carrier concentration limits electrical conductivity and the thermoelectric figure of merit ( ZT ). In this study, a series of Cu 3 Sb 1-3 x (BiGeSn) x Se 4 ( x = 0, 0.02, 0.06, 0.08, and 0.10) ceramic samples were fabricated through a three-step process comprising vacuum melting, subsequent annealing, and hot-press sintering. At 323 K, the electrical conductivity increases from 16.2 to 121.1 S cm −1 upon Bi–Ge–Sn co-doping, representing a 647% enhancement. The power factor of the Cu 3 Sb 0.76 (BiGeSn) 0.08 Se 4 attained a value of 567.6 μW m −1 K −2 at 623 K, approximately 1.86 times higher than that of the undoped Cu 3 SbSe 4 (305 μW m −1 K −2 ). Substitutional co-doping of Bi (isovalent), Ge, and Sn (acceptor-like) introduces lattice-scale defects into the Cu 3 SbSe 4 matrix, leading to grain refinement and enhanced phonon scattering. Consequently, lattice thermal conductivity is markedly suppressed, enabling a peak ZT value of 0.75 for Cu 3 Sb 0.82 (BiGeSn) 0.06 Se 4 —threefold that of pristine Cu 3 SbSe 4 (0.25). Concurrently, mechanical properties are improved, Vickers hardness rises to 329.01 H V (+12.9% relative to the undoped sample), and the Young's modulus reaches 72.58 GPa (+24.2%). These results demonstrate that multi-element co-doping is an effective strategy for the simultaneous optimization of thermoelectric and mechanical performance. The observed enhancements are attributed to the combined effects of multiple dopant species on carrier concentration modulation, phonon scattering intensification, and microstructural refinement.
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高影响因子
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