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This work proposes a dual-gate InGaZnO thin-film transistor sensor array for label-free and cross-scale multiple biomarkers detection, including single-stranded deoxyribonucleic acid (ssDNA) and protein CA125. We exploit dual gate modulation for threshold voltage and CMOS-based SAR-assisted digital-to-analog converter (DAC)
Single-silicon nanowire field-effect transistor (SiNW-FET) devices are powerful tools for the detection and quantification of biochemical molecules. However, traditional SiNW-FET-based biosensors demonstrate low output signals and high fluctuation noises, which results from the tiny scale of a single channel and electrical property deterioration caused by the dry etching process. To improve the performance of the SiNW-FET biosensors, here we developed a 3-D-SiNW-FET by using a hybrid process of deep reactive ion etching and isotropic wet etching with HF, HNO3 and HAc (HNA) mixed solution. The 3-D-SiNW-FET that included 5 × 7 nanowire channels with a wire diameter of approximately 300 nm was successfully fabricated with the novel hybrid process. Compared with the performance of single-and 2-D-SiNW-FETs, the 3-D-SiNW-FET showed a fairly good ability to stabilize and enhance the source-drain current by parallelizing the signals of the multiple channels. With the fabricated 3-D-SiNW-FET, immunoglobulin G was detected at a concentration as low as 5 fM.
The development of gas sensor chips with high sensitivity is essential for environmental monitoring and disease diagnosis. Traditional strategies for enhancing gas sensor performance, such as heat and light assistance, inevitably influence device integration due to the requirement of auxiliary heating/lighting modules. Herein, a method for adjusting the work function of sensing materials via an electric field is proposed, which allows ppb-level ammonia (NH3) detection and facilitates on-chip integration of gas sensors by eliminating the requirements of heating or irradiation. Based on this mechanism, a carbon-based field-effect transistor (FET) gas sensor with a dual-gate structure is designed, achieving a detection limit of 40 ppb NH3 at 25 °C under an optimized control gate (CG) voltage of −8 V. Through density functional theory (DFT) calculations and electronic structure analysis, we reveal that the sensing mechanism originates from CG’s work function variations induced by electric fields. Differential charge density calculations further indicate that the adsorption site, distance, and molecular polarization of NH3 are regulated by the applied electric field, leading to an optimal response at specific gate voltages. This work reveals the mechanism of the electric field on gas sensor performance, providing a novel and universal strategy for developing high-performance gas sensors compatible with on-chip integration.
Invisible mercury ion is an extremely poisonous environmental pollutant, therefore, a fast and highly sensitive detection method is of significant importance. In this study, a liquid-gated graphene field-effect transistor (GFET) array biosensor (6 × 6 GFETs on the chip) was fabricated and applied for Hg2+ quantitate detection based on single-stranded DNA (ssDNA) aptamer. The biosensor showed outstanding selectivity to Hg2+ in mixed solutions containing various metal ions. Moreover, the sensing capability of the biosensor was demonstrated by real-time responses and showed a fairly low detection limit of 40 pM, a wide detection ranged from 100 pM to 100 nM and rapid response time below one second. These results suggest that the GFET array biosensor based on ssDNA aptamer offers a simple fabrication procedure and quite fast method for mercury ion contaminant detection and are promising for various analytical applications.
A side gate FET gas sensor based on ionogel sensing dielectric was designed. • The FET sensor exhibited good NO 2 sensing performance at low side-gate bias of −1 V. • Gas sensing mechanism of gas-induced electric double layer variation was proposed. Field-effect transistors (FETs) have attracted considerable attention in gas detection due to their inherent signal amplification capability. Most of these sensors, whether based on a sensing channel or a sensing gate, still suffer from limited stability and excessive gate voltage, which is detrimental to low-power detection. Herein, a side-gate carbon-based FET (S-FET) gas sensor based on an ionogel sensing dielectric layer is rationally designed. By designing a side-gate structure with the ionogel covering the channel, the channel is isolated from the ambient environment and the ionogel sensing dielectric is fully exposed, which benefits the electrical and sensing stability of the sensor. Besides, the electric double layer (EDL) formed within the ionogel under a low applied voltage serves as an additional electric potential across the side gate and channel, resulting in effective control of the channel conductivity and significantly reducing the gate voltage of the sensor. The fabricated sensor exhibits a response of approximately 182% toward 10 ppm of NO 2 and demonstrates reliable gas-sensing performance over the 0.15–10 ppm range under a low side gate voltage of −1 V. Finally, a gas-sensing mechanism based on gas-induced EDL modulation is proposed. This work proposes a new strategy for fabricating high-performance FET gas sensors based on ionogel sensing dielectrics, providing a reference for designing low-voltage sensing electronics. Download: Download high-res image (181KB) Download: Download full-size image
The path toward field-effect transistor (FET) application from laboratory to clinic has delivered a compelling push in the biomedical domain, yet ultrasensitive and timely pathogen identification without PCR remains a long-lasting challenge. Herein, we create a generic check station termed “CRISPR-FET”, first incorporating the CRISPR/Cas13a system within the FET modality, for accelerated and unamplified detection of viral RNA. Unlike conventional FETs bearing target-specific receptors, this sensor holds three unique advancements: (i) an ingenious sensing mechanism is used, which converts the signal of a large-sized analyte into an on-chip cleavage response of an immobilized CRISPR reporter, enabling signal generation events to occur all within the Debye length; (ii) the multipurpose inspection of the CoV ORF1ab, CoV N gene, and HCV RNA unveils the potential for “one-for-all” scalable FET-based molecular diagnostics; and (iii) it is shown that Cas13a-crRNAs targeting different sites of the viral genome can be deployed in tandem to amplify the FET response, empowering the detection limit down to 1.56 aM, which is a world-record level of sensitivity in the FET for direct viral gene sensing. Notably, a brilliant clinical applicability was made in distinguishing HCV-infected patients from normal controls. Overall, this study sheds new insights into FET-based nucleic acid sensing technology and invokes a vision for its possible future roles in diagnosis of various viral diseases.
Achieving higher sensitivity is always paramount for the detection of biomolecules in medical applications. Significant efforts have been made to improve the sensitivity of aptamer-functionalized two-dimensional material-based field-effect transistor (A-2DFET) biosensors, typically by increasing the probe density. However, the underlying mechanism by which the probe density affects the sensitivity remains unclear, and a rigorous mathematical model incorporating the probe density is also lacking. In this work, we develop a probe density-incorporated mathematical model of MoS 2 -based A-2DFET biosensors. Analysis of this model reveals an optimal density-which is influenced by the spatial structure, charges of the probe-target complexes, and the binding affinity-is expected to achieve the highest sensitivity. To validate the model, we regulate the probe density by controlling the population of gold Nano-islands (AuNIs), which function as aptamer anchoring sites, before investigating the sensitivity of different devices. Detection experiments targeting interferon-gamma (IFN-γ) demonstrate that the sensitivity trend across different probe densities, initially increasing and then decreasing as the probe density rises, is consistent with the prediction of the model. By elucidating the mechanistic role of probe density in determining the sensitivity, this study provides an important theoretical basis for the design and application of A-2DFET biosensors.
Owing to the separation of field-effect transistor (FET) devices from sensing environments, extended-gate FET (EGFET) biosensor features high stability and low cost. Herein, a highly sensitive EGFET biosensor based on a GaN micropillar array and polycrystalline layer (GMP) was fabricated, which was prepared by using simple one-step low-temperature MOCVD growth. In order to improve the sensitivity and detection limit of EGFET biosensor, the surface area and the electrical conductivity of extended-gate electrode can be increased by the micropillar array and the polycrystalline layer, respectively. The designed GMP-EGFET biosensor was modified with l-cysteine and applied for Hg2+ detection with a low limit of detection (LOD) of 1 ng/L, a high sensitivity of −16.3 mV/lg(μg/L) and a wide linear range (1 ng/L-24.5 μg/L). In addition, the detection of Hg2+ in human urine was realized with an LOD of 10 ng/L, which was more than 30 times lower than that of reported sensors. To our knowledge, it is the first time that GMP was used as extended-gate of EGFET biosensor.
Urinalysis is attractive in non-invasive early diagnosis of bladder cancer compared with clinical gold standard cystoscopy. However, the trace bladder tumor biomarkers in urine and the particularly complex urine environment pose significant challenges for urinalysis. Here, a clinically adoptable urinalysis device that integrates molecular-specificity indium gallium zinc oxide field-effect transistor (IGZO FET) biosensor arrays, a device control panel, and an internet terminal for directly analyzing five bladder-tumor-associated proteins in clinical urine samples, is reported for bladder cancer diagnosis and classification. The IGZO FET biosensors with engineered sensing interfaces provide high sensitivity and selectivity for identification of trace proteins in the complex urine environment. Integrating with a machine-learning algorithm, this device can identify bladder cancer with an accuracy of 95.0% in a cohort of 197 patients and 75 non-bladder cancer individuals, distinguishing cancer stages with an overall accuracy of 90.0% and assessing bladder cancer recurrence after surgical treatment. The non-invasive urinalysis device defines a robust technology for remote healthcare and personalized medicine.
Early diagnosis of Alzheimer’s disease (AD) remains challenging due to the extremely low concentration of relevant biomarkers and the limited sensitivity of conventional detection techniques. In this study, we present a carbon nanotube field-effect transistor (CNT-FET) immunosensor for label-free detection of phosphorylated tau at threonine 217 (p-tau217). The device employs a Y2O3/HfO2dielectric layer and gold nanoparticles (AuNPs) to improve biofunctionalization, with anti-p-tau217 antibodies immobilized on the CNT channels. In phosphate-buffered saline (PBS), the sensor exhibited a linear response over a concentration range of 3 fM to 30 pM (R2= 0.973) and achieved a limit of detection (LOD) of 1.66 fM. The device demonstrated high selectivity, with a normalized signal response (NSR) for p-tau217 that was 5–6 times higher than for human serum albumin (HSA) and p-tau231, even at 1000-fold higher concentrations of these interferents. The sensor exhibited reproducibility with a relative standard deviation (RSD) of 4.8% (n= 9) and storage stability with only a 10% decrease in signal after 7 days at 4 °C. Mechanistic analysis indicated that the net positive charge and structural flexibility of the p-tau217 peptide led to a reduction in drain current upon binding, consistent with electrostatic gating effects in p-type CNT-FETs. Current limitations include the absence of standardized p-tau217 reference materials. Future work will focus on validation with clinical samples. This CNT-FET platform enables rapid, minimally invasive detection of p-tau217 and holds strong potential for integration into clinical workflows to facilitate early AD diagnosis.
Field-effect transistor (FET) biosensors enable label-free and real-time electrical transduction; however, their practical deployment is often constrained by the need for bulky benchtop instrumentation to provide stable biasing, low-noise readout, and data processing. Here, we report a portable extended-gate FET (EG-FET) integrated sensing system that consolidates the sensing interface, analog front-end conditioning, embedded acquisition/control, and user-side visualization into an end-to-end prototype suitable for on-site operation. The system couples a screen-printed Au extended-gate electrode to a MOSFET and employs a low-noise signal-conditioning chain with microcontroller-based digitization and real-time data streaming to a host graphical interface. As a proof-of-concept, enterohemorrhagicEscherichia coliO157:H7 was selected as the target. A bacteria-specific immunosensing interface was constructed on the Au extended gate via covalent immobilization of monoclonal antibodies. Measurements in buffered samples produced concentration-dependent current responses, and a linear calibration was experimentally validated over 104–1010CFU/mL. In specificity evaluation against three common foodborne pathogens (Staphylococcus aureus,Salmonella typhimurium, andListeria monocytogenes), the sensor showed a maximum interference response of only 13% relative to the target signal (ΔI/ΔImax) with statistical significance (p< 0.001). Our work establishes a practical hardware–software architecture that mitigates reliance on benchtop instruments and provides a scalable route toward portable EG-FET sensing for rapid, point-of-need detection of foodborne pathogens and other biomarkers.
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